OM387B Search Results

31d8 diode

Abstract: NEOSID inductive proximity detector ic 250 3B7 31d8 philips 3h1 pot core Proximity Detectors for metal detector PROXIMITY inductive ic OM386B OM387B
Contextual Info: - PHILIPS INTERNATIONAL sur i> bbt h • 3 OM386B OM387B r,« 7110fl2b 00470flfa 534 H P H I N HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated circu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n ,

Contextual Info: OM387B Linear ICs Alarm/Security Circuit statusû Output TypeLinear V P D Max. (W) Nom. Supp (V)-24 Minimum Operating Temp (øC)-40 Maximum Operating Temp (øC)85 Package StyleN/A Mounting StylePinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number DescriptionHybrid IC for Inductive proximity detectors

NEOSID p9

Abstract: m8 neosid NEOSID metal detector coil DIAGRAM inductive proximity detector ic neosid CAP
Contextual Info: ~ r- o S -c > 5 PHILIPS INTERNATIONAL SbE , « OM386B OM387B ^ ?lm2t HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction, especially the M8 hollow stud. The OM386B is fo r positive supply voltage and the OM387B is fo r

Contextual Info: • b b S a ^ l 003273T T3S « A P X | I I OM386B OM387B N AF1ER PHILIPS/DISCRETE b'JE D _ y V HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proximity detectors in tubular construction,

inductive proximity detector ic

Abstract: NEOSID OM386B metal detector coil DIAGRAM philips 3h1 pot core VD neosid OM387B inductive proximity detector with transistor
Contextual Info: • b b s a ' m 003273^ T3S ■ APXI 11 N AMER PHILIPS/DISCRETE h^E » _ y OM386B OM387B V _ HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated c ircu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n ,

Contextual Info: 0032745 13= • APX N AMER PHILIPS/DISCRETE b=)E OM 386M OM387M ^ HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proxim ity detectors in tubular construction, especially the MS hollow stud. The OM386M is for positive supply voltage and the OM387M is for

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REPLACED BY REASON FOR DELETION KM110B/1 Discontinued

KMA10

Abstract: SC17 Philips KM110BH KMA20 Discrete Semiconductors KTY86-205 SC17 KMI15/1 OM391 Philips Sensors handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Replacement list Semiconductor Sensors 1996 Nov 25 File under Discrete Semiconductors, SC17 Philips Semiconductors Semiconductor Sensors Replacement list REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version:

ablebond 293-1

Abstract: inductive proximity detector ic NEOSID p9 m8 neosid NEOSID neosid T D
Contextual Info: OM386M OM387M PHILIPS INTERNATIONAL SbE » 7110fl2b G O ^ O ^ Ö3fl H P H I N HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction, especially the M8 hollow stud. The OM386M is fo r positive supply voltage and the OM387M is fo r

inductive proximity detector ic

Abstract: VD neosid ablebond 293-1 NEOSID NEOSID 22 metal detector coil DIAGRAM neosid 10 metal detectors IC neosid CAP OM386M
Contextual Info: • bbS3T31 0032745 13T H A P X N AMER PHILIPS/DISCRETE O M 386M O M 387M b'IE D HYBRID IN TE G R A TE D C IR C U IT S FOR IN D U C TIVE P R O X IM IT Y D E T E C T O R S Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction,

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.