OPTIMOS P3 Search Results

OPTIMOS p3

Abstract: BSB029P03NX3 BSB029P03NX3G
Contextual Info: n-Channel Power MOSFET OptiMOS BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance

BSB027P03LX3G

Abstract: infineon MOSFET parameter test BSB027P03LX3
Contextual Info: p-Channel Power MOSFET OptiMOS P3 BSB027P03LX3 G Data Sheet 1.9, 2011-03-02 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB027P03LX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance

Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features • Complementary P + N channel · Enhancement mode VDS · Logic level 4.5V rated RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0

BSL308C

Abstract: HLG09283 L6327
Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated

80n03

Abstract: OPTIMOS p3 OPTIMOS OPTIMOS pfet3 to220b
Contextual Info: OptiMOS / OptiMOS-T - Naming System S ! products developed before 2004 I ! products developed in 2004 and later I P B 80 N 03 S2 L 03 Device: P for Power-MOSFET Package Type: P for TO220 B for TO263/D²PAK D for DPAK TO252 I for IPAK (TO262) C for SuperSO8 (tbd)

JESD22-A114

Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A

IEC61249-2-21

Abstract: JESD22-A114
Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8

D148

Abstract: JESD22-A114 080P3NSE
Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V VGS=-10 V 80 mW VGS=-4.5 V 130 ID -2.0 A • ESD protected PG-TSOP-6 • Qualified according to AEC Q101

DD108

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

IEC61249-2-21

Abstract: JESD22-A114
Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A

JESD22-A114

Contextual Info: BSO080P03NS3E G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A

JESD22-A114

Abstract: d148
Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features V DS • single P-Channel in SO8 • Qualified according JEDEC 1 for target applications • 150°C operating temperature R DS on),max -30 V V GS=10 V 8.0 mΩ V GS=6 V 11.4 ID 14.8 A

080P3NS

Abstract: GS-10
Contextual Info: BSO080P03NS3 G OptiMOS 3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1 for target applications • 150°C operating temperature RDS on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications

f21a

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

BSS308PE

Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

PG-SOT23

Abstract: BSS308PE L6327
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

f21 diode sot23

Abstract: f21 diode marking YFs
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

Contextual Info: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

BSS308PE H6327

Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101

BSS308PE

Abstract: JESD22-A114 L6327
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

BSL308PE

Abstract: JESD22-A114 L6327
Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-TSOP-6 • Qualified according to AEC Q101