OQ23 Search Results

cq837

Contextual Info: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36

540L

Contextual Info: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative

Contextual Info: n u N EW PRODUCT HB56G51236CC Series 524,288-WordX 36-Bit High Density Dynamic RAM Card 0H IT A C H 1 Rev.2 Ju n . 30,1992 Description The HB56G51236CC is a 512KX36 dynam ic RA M Card, mounted 4 pieces of 4M bit D RA M HM 514900LTT sealed in T S O P package.

Contextual Info: ADVANCE MT58LC32K32/36E1 32K X 32/36 SYNCBURST SRAM MICRON B TECHNOLOGY. INC 32K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11 ns Fast OE# access time: 5ns

tc 97101

Abstract: D472
Contextual Info: ADVANCE M IC B D N I ' I 4 MEG BURST EDO DRAM MODULE MT9LD272 B N , MT18LD472 B(N) 72 BURST ED0 DRAM MODULES 2, 4 MEG X 72 16, 32 MEGABYTE, 3.3V, ECC, BURST EDO FEATURES • • • • • • • • • 168-pin, dual-in-line memory module (DIMM) ECC pin-out

Contextual Info: PRELIMINARY M IC Z R O N I _ « MT18LD472 X 4 MEG X 72 DRAM MODULE DRAM 4 MEG x 72 M o n i l i F IV IW U U L t. 32 MEGABYTE, ECC, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard ECC pinout in a 168-pin, dual-in-line

ds2 lio board

Abstract: VMP22 6cpw AW3216 TPA 239 P603B I0603B 25Q 328
Contextual Info: f^TC1 _ 1 — 2 -13 —1 ? _ 6 - 7 fi — - 9 1 O — I2 t -! 1 MTG118_N_RD30X12 MTG2 f_ 1 4 — 3 ♦ —2 f—' 4 In f, *— 7 fi i— i— 90 » • —1 » 12 ! 1 r1 M TG118_N_RD30X12 MTG11B_N_RD30X12 MTG118_N_RD3 DH EA SN CG RI IC ON OFC C EPT PC ARD

VG46VS8325

Abstract: ic 3645 sh xaxs
Contextual Info: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)

OQ23

Contextual Info: ^EDI EDI8L32128C ELECTRONIC DESIGNS INC. • High Performance Four Megabit SRAM 128Kx32 CMOS High Speed Static RAM Features The EDI8L32128C is a high speed, high performance, four megabit density Static RAM organized as a 128Kx32 bit array. Four Chip Enables, Write Control, and Output Enable

kmm366s203b

Abstract: KMM366S203BTN-G0 KMM366S203BTN-G2 ram kmm366s203btn-g2
Contextual Info: KMM366S203BTN NEW JEDEC SDRAM MODULE KMM366S203BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203BTN is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: -¿UL %e ?9£3 ADVANCE MICRON I 32K KM'CONOUCTOR. MC SYNCHRONOUS SRAM X MT58LC32K36A6 36 SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED I/O AND LINEAR BURST COUNTER FEATURES • • • • • • • • • • • • • • • Fast access times: 7 ,1 0 ,1 2 and 15ns

samsung LRA

Contextual Info: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung

MT501C

Contextual Info: ADVANCE 128K SYNCHRONOUS SRAM • • • • • • • • • • • • • • +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE PIN ASSIGNMENT Top View Fast access tim es: 4 .5 ,5 , 5.5, 6 and 7ns Fast O E # access tim es: 4.5, 5, 5.5 and 6ns

tc 97101

Abstract: 5 PEN PC TECHNOLOGY advance oQ26
Contextual Info: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM

HM5117400J

Contextual Info: \ i h , N ü n l b c * M l ! I / / ' 7 NEWPRODUCT HB56D836B Series 8,3 8 8 ,6 0 8 -W o rd X 3 6 -B it H ig h D e n s ity D y n a m ic RAM M odule Rev.O - PRO D UCT P R E V IE W - ^ H I T A P . H l Dec. 24. 1991 D e sc r ip tio n T he H B 5 6 D 8 3 6 B is a 8M X 36 dynam ic R A M module, mounted 16 pieces of 16Mbit D R A M

M12T1

Abstract: 5ZZB C5037
Contextual Info: ADE-203-491 2 HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output Preliminary HITACHI D e c o r i 995 Ordering Information Features • • • • • • • • • • • • • • Single 3.3 V power supply (LVTTL)

EDI8L3265C

Abstract: OQ23 "Electronic designs inc"
Contextual Info: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array

Contextual Info: "HYUNDAI HYM536A414A M-Series 4M x 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM 536A414Ais a 4M x 36-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117404Ain 24/26 pin SOJ on a 7 2 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^ F decoupling capacitors are mounted for each

Contextual Info: 128MB DDR SDRAM MODULE H YMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY D E S C R IP T IO N Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix

KMM5368105BK

Abstract: EZ 648
Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES G EN ERA L D ESCRIPTIO N The Samsung KM M 53680 1 05BK is a 8M b it x 36 • Part Identification

Contextual Info: O K I S em iconductor M SC23437A-XXBS9/PS9 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23437A-xxBS9/DS9 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M em ory M odule com posed of nine 16-Mb DRAMs 4M x 4 in SO) packages

THM321020

Contextual Info: THM321020S-80, 10 THM321020SG-80, 10 1,048,576 W O RDS X 32 BIT D Y N A M IC RAM M O D U LE PRELIMINARY DESCRIPTION The THM321020S is a 1,048,576 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514400J on the printed circuit board. The THM321020S can be as well used as 2,097,152 words by

Contextual Info: [M IC R O N 32K SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6 and 7ns Fast OE# access times: 4.5, 5 and 6ns Single +3.3V +10% /-5% pow er supply

MH8M32

Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8M X 32 256 MBIT Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page ins) MH8M32AJ-6 * 60 MH8M32AJ-7 ★ 70 MH8M32AFJ-6 * MH8M32NAFJ-6 ★ MH8M32AFJ-7 ★ MH8M32NAFJ-7