P CHANNEL MOSFET 10A 20V Search Results

STC4567

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR mosfet 10V 10A N and P MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Contextual Info: STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  FEATURES * RDS ON < 40mΩ @ VGS=-10V, ID =-10A RDS(ON) < 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified

STC4614

Abstract: P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET
Contextual Info: 614 STC4 STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

4505ss

Abstract: A1770 24V 1A mosfet
Contextual Info: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8

RFM10P12

Abstract: RFM10P15 TA940 RFP10P12 RFP10P15 TB334
Contextual Info: RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

Contextual Info: STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P channel MOSFET 10A

Abstract: STP4435A MOSFET 10A
Contextual Info: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: APM9938K Dual Enhancement Mode MOSFET N- and P-Channel Features • Pin Description D1 D1 D2 D2 N-Channel 20V/10A, RDS(ON)=13mΩ (typ.) @ VGS=4.5V RDS(ON)=22mΩ (typ.) @ VGS=2.5V • S1 G1 S2 G2 P-Channel -20V/-6A, Top View of SOP-8 RDS(ON)=35mΩ (typ.) @ VGS=-4.5V

AP3310GH

Contextual Info: AP3310GH/J-HF RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability BVDSS -20V RDS ON 150mΩ ID ▼ Fast Switching Characteristic G -10A S Description

3310GH

Contextual Info: Advanced Power Electronics Corp. AP3310GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics BV DSS 2.5V Gate Drive Capability R DS ON G RoHS-compliant, halogen-free -20V 150mΩ ID -10A S Description

4513GH

Abstract: AP4513GH
Contextual Info: AP4513GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 35V RDS ON ▼ Good Thermal Performance 42mΩ ID ▼ Fast Switching Performance S1 G1 10A P-CH BVDSS

Contextual Info: AP4513GH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 35V RDS ON ▼ Good Thermal Performance 42mΩ ID ▼ Fast Switching Performance S1 G1 10A P-CH BVDSS

ISOPLUS247

Abstract: 16P60P
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR16P60P VDSS ID25 RDS on = - 600V = - 10A ≤ 790mΩ Ω P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600

GJ3310

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GJ3310 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -20V 150m -10A Description The GJ3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

AP4513GH

Contextual Info: AP4513GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance 35V RDS ON ▼ Fast Switching Performance 42mΩ ID S1 G1 10A P-CH BVDSS

GI3403

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GI3403 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 200m -10A Description The GI3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GJ3403

Abstract: 24v 6A mosfet
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/02/25 REVISED DATE : GJ3403 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 200m -10A Description The GJ3403 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

3310GH

Abstract: 3310G 3310GH datasheet 3310-G AP3310GH marking code E2 and gate AP3310GHJ 3310GJ
Contextual Info: AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic BVDSS -20V RDS ON 150mΩ ID G -10A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance

AP3310GH

Contextual Info: AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D -20V RDS ON 2.5V Gate Drive Capability Fast Switching Characteristic 150m ID G -10A S Description Advanced Power MOSFETs from APEC provide the designer with the

DMP2018LFK

Abstract: code diode transient DMP2018LFK-7 DS3535
Contextual Info: DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS on max ID TA = 25°C 16mΩ @ VGS = -4.5V -12.8A 25mΩ @ VGS = -2.0V -10A V(BR)DSS • • • • • • • -20V Description and Applications Low On-Resistance Low Input Capacitance

PA102FDG

Contextual Info: Single P-channel MOSFET ELM32413LA-S •General description ■Features ELM32413LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-20V Id=-10A Rds(on) < 115mΩ (Vgs=-4.5V) Rds(on) < 180mΩ (Vgs=-2.5V)

Contextual Info: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)