dual P-Channel JFET
Abstract: low noise dual P-Channel JFET SST176 diode dual jfet p-channel monolithic dual jfet transistor
Text: J/SST174 SERIES SINGLE P-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Direct Replacement For SILICONIX J/SST174 SERIES LOW ON RESISTANCE rDS on ≤ 85Ω LOW GATE OPERATING CURRENT ID(off) = 10pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
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J/SST174
-50mA
350mW
OT-23
dual P-Channel JFET
low noise dual P-Channel JFET
SST176 diode
dual jfet p-channel
monolithic dual jfet transistor
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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OT-23.
KDS193
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS226 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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OT-23.
KDS226
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KDS184
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS184 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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OT-23.
KDS184
KDS184
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.9V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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KDS193
OT-23.
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS181 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : SOT-23. E B L L ・Low Forward Voltag : VF=0.92V Typ. . 2 A H 1 P Reverse Voltage VRM 85 V VR 80 V J UNIT K RATING P N SYMBOL
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OT-23.
KDS181
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Untitled
Abstract: No abstract text available
Text: S T C 2200 S amHop Microelectronics C orp. J an 03 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 85 @ V G S = 4.5V
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OT-323
OT-323
STC2200
OT-23
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T930S
Abstract: A358S A438S T128F T318F T698F EUPEC tt 104 EUPEC tt 25 N 12 ST178 T510S
Text: S2E J> EUPEC aHGBET? 0G0057Q 45Ô M U P E C A 1250 S ^ 2 * 5 '2 - 1 600 lÿpenreihe/Type range Elektrische Eigenschaften Höchstzulässige Werte 1000 1100 1200 1300* —0* Electrical properties Vrrm tp= 1 «S 'rfTj ’ "/j Itavm tc = 85°C tc = 70°C
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A1250
T-91-20
T930S
A358S
A438S
T128F
T318F
T698F
EUPEC tt 104
EUPEC tt 25 N 12
ST178
T510S
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Untitled
Abstract: No abstract text available
Text: f j ] h a r r C D semiconductor CD74FCT16245T, CD74FCT162245T is December 1996 Fast CMOS 16-Bit Bidirectional Transceivers Features Ordering Information TEMP. RANGE °C PACKAGE PKG. NO. CD74FCT16245ATMT -40 to 85 48 Ld TSSOP M48.240-P • Hysteresis on All Inputs
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CD74FCT16245T,
CD74FCT162245T
16-Bit
240-P
300-P
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CNW85
Abstract: optocoupler ic MBB037 Optocoupler 601 philips 23 BS415 BS7002 CNW84 VDE0884
Text: PH ILIP S 41E INTERNATIONAL 7iiQôab D oa3aHsa b m p h i n 7 " - v / - 8 3 P ro d u c t s p e c ific a tio n P h ilip s S e m ico n d u cto rs J C N W 8 4/C N W 85 H eavy duty o p to co u p lers FEATURES • Minimum 2 mm isolation thickness between emitter and
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711005b
CNW84/CNW85
CNW84
CNW85
optocoupler ic
MBB037
Optocoupler 601
philips 23
BS415
BS7002
VDE0884
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LNJ816C87RA
Abstract: No abstract text available
Text: Checked Approved Designed DEVELOPMENT SPECIFICATION P/N TEM PORARY : L N J 8 1 6 C 8 7 R A Soft Orange Light Emitting Diode A P P L I CA T I ON Indication M A T E R I A L InGaAIP O U At tached T L I N E A B S O L U T E M A X I R A T M I U N M G Topr Tstg -30-+85
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KB-H-022-0I8B
LNJ816C87RA
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Untitled
Abstract: No abstract text available
Text: Approved Des igned Checked DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN J 4 1 8 C 8 4 RA 1 T Amber Light Emitting Diode A P P L I C A T I O N Indicatiors M A L InGaAlP O U E At t a c h e d T E T R I L I A N A B S O L U T E * 1, lfdc Topr -30-+85 M A X I
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-H-Q22-0
KB-H-022-016B
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B585
Abstract: rs tube
Text: 6DT4 - TUNO-SOL DIODE DIODE FO R D A M P E R S E R V IC E IN CO LO R T .V . R E C E IV E R S A N Y MOUNTING POSITION G LASS BU LB J E D E C 4CG S H O R T IN T E R M E D IA T E S H E L L O C T A L 5 P IN B A S E B5-85 O U T L IN E D R A W IN G J E D E C 9-44
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B5-85
RS-239
B585
rs tube
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS SINGLE 2-INPUT POSITIVE-NAND GATE WITH 5 VOLT TOLERANT I/O J m ïï., D E S C R IP TIO N : FE A T U R E S : - 0.5 MICRON CMOS Technology - ESD > 2000V per MIL-STD-883, Method 3015; - 0.65mm pitch P S O P package - Extended commercial range of - 40° C to +85° C
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IDT74LVC1G00A
MIL-STD-883,
200pF,
LVC1G00A
IDT74ALVC1G04.
2975StenderWay
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Untitled
Abstract: No abstract text available
Text: OPTEK P roduct B ulletin OPB804 J u ly 1996 Slotted Optical Switch Type OPB8Q4 IL* • I BOTTOM YIEH Features A bso lu te Maxim um R atings Ta = 25° C unless otherwise noted • • • • Storage and Operating Temperature. -40° C to +85° C
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OPB804
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OPB844A
Abstract: OPB844B
Text: ¿ 0 OPTEK P roduct B ulletin OPB844 J u ly 1996 Slotted Optical Switches Types OPB844A, OPB844B Features A bso lu te M axim um Ratings T a = 25° C unless otherw ise noted • • • • • Storage and Operating Temperature Range. -40° C to +85° C
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OPB844
OPB844A,
OPB844B
OPB844A
OPB844B
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1xys
Abstract: No abstract text available
Text: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR
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58N50
61N50
58N50
61N50
150eC,
1xys
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diode BY 127
Abstract: OPB706B OPB706A OPB706C QPB706B QPB706C pb706
Text: OPTEK P ro d u c t Bulletin O P B 7 0 6 J u n e 1996 Reflective Object Sensors Types OPB706A, QPB706B, QPB706C • F ea tu res A b s o lu te M axim um R a tin g s T a = 2 5 ° C u n le s s o th e rw is e noted • Phototransistor output Storage and Operating T em pe ratu re. -40° C to +85° C
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OPB706A,
OPB706B,
OPB706C
diode BY 127
OPB706B
OPB706A
OPB706C
QPB706B
QPB706C
pb706
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UL1550
Abstract: cb85 1550LI
Text: 19-77/2 UKLAD SCALONY ANALOGOWY UL1550L SWW 1156-32 nsn 1 *0,5 / ' « 5,3 s /J U k la d sc a lo n y w o budow ie ty p u CE12 CB-85 1 — an o d a, 2 — k a to d a S c h e m a t e le k try c z n y ZASTOSOYVANIE DANE TECHNICZNE U k la d je s t p rz ez n ac zo n y do z a s ila n ia w a ra k to ro w (diod
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UL1550L
CB-85)
j45kSl
UL1550L
wsp61czynnik
PN-73/E-04550.
UL1550
cb85
1550LI
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Untitled
Abstract: No abstract text available
Text: s i l ì J l l C V rsm If r m s m a xim u m va lu e fo r co n tin u o u s o p eration V rr m 120 A SEMIPACK 1 Fast Diode Modules If a v (sin. 180; T case = 85 °C; 50 Hz) 42 A V 1000 SKKD 42 F 10 SKMD 42 F 10 1200 SKKD 42 F 12 SKMD 42 F 12 SKND 42 F 12
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KD042F20
KD040F0S
O-240
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Untitled
Abstract: No abstract text available
Text: Checked Approved Designed / DEVELOPMENT P / N : L N J In d ic a tio n s M A GaP O U E T R L I I A L N E At t ached A B S O L U T E M A X R A T I I G Topr Tstg "30 — +85 -40-+100 LFDC M U M N TEMPORARY 3 1 8 C 8 4 R A 1 Green L ig h t E m it t in g Diode
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LNI318C84RA1
KW306HIMA
KB-hh02
KB-H-022-016B
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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BZY85C
Abstract: DIODE BZy 83 bzy85 c15 bzy85 BZY85C15 BZY85/C15 C8V2 DIODE BZY83/C5V6 C24 06 85 d8v2
Text: BZY83C, BZY83D, BZY85C, BZY85D Silicon Z-diodes Silicon Z-diodes type BZY 83 and BZY 85 are available w ith 5% tolerance C and 10% tolerance (D). BZY 83 is provided w ith a metal case 1 A 2 DIN 41871 and may be operated in free air as well as mounted on a chassis w ith a cooling fin (heat
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BZY83C,
BZY83D,
BZY85C,
BZY85D
83/C4V7
83/C5V1
BZY83/C5V6
83/C6V2
83/C6V8
BZY83/C7V5
BZY85C
DIODE BZy 83
bzy85 c15
bzy85
BZY85C15
BZY85/C15
C8V2 DIODE
C24 06 85
d8v2
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LA101VP
Abstract: LA101VF LA-101MF 24 pin 7 segment 4 DIGIT display layout LA-101VF LA-101VP Display 7 segment sec 25mm LA-101YF pin 7 segment FT 240x
Text: • T flS im T 000fl072 fl4S ■ R H U K /L ig h t Emitting Diodes LA-101 FP Series LA-101 FP Series High-Efficiency Numeric Displays • ^ • ^ T f ^ S /'D im e n s io n s U n it : mm LA-101 i / ' J - X t t , WZ'~'iMpJTZ't>& ffl V t -5£ 9 <> 3 ft tc LED&
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LA-101
34X10
LA-101MF/MP
LA101VP
LA101VF
LA-101MF
24 pin 7 segment 4 DIGIT display layout
LA-101VF
LA-101VP
Display 7 segment sec 25mm
LA-101YF
pin 7 segment
FT 240x
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