P N JUNCTION DIODE Search Results

HYPERABRUPT

Contextual Info: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.

2SC1254

Contextual Info: LED Structure, Characteristics and Operation LED BASIC STRUCTURE CHARACTERISTICS • The LED light em itting diode chip has an internal P-N junction, and an electrode is provided on each surface of the chip to make ohmic contact. The P-N junction is formed

2SC1254

Abstract: JIS C7021 B-11 led Concave RS510
Contextual Info: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by

characteristics of zener diode in reverse bias

Abstract: VRRM VRSM VBR pn junction full wave bridge rectifier
Contextual Info: Symbols SYMBOLS According IEC 147 and IEC 747-2 Cd, Diode Capacitance Total capacitance between the diode terminals due to case, junction and parasitic capacitance. Cj, Junction Capacitance Capacitance due to a p-n junction of the diode. It decreases with increasing reverse voltage.

BFR101A

Abstract: BFR101 BFR101B
Contextual Info: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source

Rf detector HSMS 8202

Abstract: Waveform Clipping With Schottky schottky diode hsms8202 HSMP-2810 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B
Contextual Info: Applications Information Schottky Diode Fundamentals The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped or p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the

HL7801

Abstract: HL7806
Contextual Info: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).

pn junction diode structure

Abstract: PIN diode
Contextual Info: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.

AVERAGE QUASI PEAK AND PEAK DETECTOR

Abstract: nixie tube circuit
Contextual Info: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction

Contextual Info: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

2N3993

Abstract: 1450 transistor
Contextual Info: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

Contextual Info: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

2n5460

Contextual Info: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r

7.1 Channel audio amplifier

Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_

Contextual Info: • bb53T31 00EH3i»7 2b4 * A P X N AflER PHILIPS/DISCRETE BAT74 b7E » J V SCHOTTKY BARRIER DIODE Two separate silicon epitaxial Schottky barrier diodes with an integrated p-n junction protection ring in one microminiature SOT-143 envelope, intended for surface mounting SMD technology .

Emcore solar cell

Abstract: EMCORE CIC ATJ 1e15 triple-junction "solar cell" 1E14 solar cell 121E-15 5E14
Contextual Info: | APRIL PRODUCT BRIEF 2005 | MONTH PRODUCT BRIEF 2003 PRODUCT BRIEF | APRIL 2005 Advanced Triple-Junction With Monolithic Diode ATJM High-Efficiency Solar Cells for Space Applications 27.0% Minimum Average Efficiency Features and Characteristics Advanced Triple-Junction (ATJ) InGaP/InGaAs/Ge Solar Cells with n-on-p polarity on 140-µm Uniform

Contextual Info: MAX6654 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface General Description The MAX6654 is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

DIODE AA 119

Contextual Info: a n A M P co m p a n y GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features Case Styles • • • • Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product - Packaged Diodes - Chips

MAX6654

Abstract: 2N3904 2N3906 CMPT3904 KST3904-TF MAX6654MEE SMBT3904 SST3904
Contextual Info: 19-1836; Rev 2; 1/02 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

Contextual Info: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

2N3904

Abstract: 2N3906 CMPT3904 E16-1 KST3904-TF MAX6654 MAX6654MEE SST3904 500-32BT02-000 samsung emi* filter
Contextual Info: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

Contextual Info: 19-1836; Rev 2; 1/02 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

Contextual Info: 19-2190; Rev 1; 5/06 2°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted

2N3904

Abstract: 2N3906 CMPT3904 E16-1 KST3904-TF MAX6654 MAX6654MEE SST3904 500-32BT02-000 Fenwal Electronics
Contextual Info: 19-1836; Rev 3; 5/06 1°C Accurate Remote/Local Temperature Sensor with SMBus Serial Interface The is a precise digital thermometer that reports the temperature of both a remote P-N junction and its own die. The remote junction can be a diode-connected transistor—typically a low-cost, easily mounted