P100E Search Results

P300E-24

Abstract: P300E P150E12 P1500E-24 P150E-15 P15E-24 p150e-24 P600E-12 P1500E-5 P15E-12
Contextual Info: Ordering information Unit type P15E P P 1 15 2 E 3 -5 4 -O 5 1Series name 2Output wattage 3UL recognized,TuV approved, CSA certified:E 4Output voltage 5Optional C :with Coating G :Low leakage current J :Connector type N :with Cover R MODEL MAX OUTPUT WATTAGE[W]

1206R

Abstract: 1206B103K500N LM339AM l3303s
Contextual Info: International I R Rectifier P D - 6 .0 8 7 IRP6VRMI Turnkey Pentium Pro1power supply specification The new IRP6VRM 1 offers the pow er supply designer a complete turnkey solution for DC/DC converters required to power next-generation microprocessors. A synchronous

P300E-24

Abstract: P1500E-24 P300E-5 P600E-24 RP300E P150E12 P300E-15 PT1500U-24 P15E5 p150e-24
Contextual Info: Ordering information Unit type P15E P P 1 15 2 E 3 -5 4 -O 5 1Series name 2Output wattage 3UL recognized,TuV approved, CSA certified:E 4Output voltage 5Optional *3 C :with Coating G :Low leakage current J :Connector type N :with Cover R MODEL MAX OUTPUT WATTAGE[W]

tl249

Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

LM7805ACH-ND

Abstract: TL174 tl173 PTVA035002EV V1
Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features

C205

Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications

diode z104

Abstract: 3.1v 0.5w ZENER DIODE 1N4148 equivalent SMD
Contextual Info: IRAUDAMP12 130W/4 x 2 Channel Class D Audio Power Amplifier Using the IR4301 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP12 Demo board; • Always wear safety glasses whenever operating Demo Board

Contextual Info: IRAUDAMP5 120W x 2 Channel Class D Audio Power Amplifier Using the IRS2092S and IRF6645 By Jun Honda, Manuel Rodríguez and Jorge Cerezo Fig 1 CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP5 Demo Board;

PTFA043002

Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

TRANSISTOR tl131

Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications

IRS2092S

Abstract: power amplifier 3000W with PCB inverter 12v to 220 ac mosfet based
Contextual Info: IRAUDAMP9 1.7 kW / 2- Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:

KUN10

Abstract: bu2027 P50B1 8731 DIN42802-1 S25H4G tape 3m 467 4mm banana plug socket 013-1000-040FB9 PKI-10A
Contextual Info: 1879 Technical portal and online community for Design Engineers - www.element-14.com Connectors - Test Page 1mm Plugs and Sockets . . . . . . . . . . . . . . . . . . . . 2mm Plugs and Sockets . . . . . . . . . . . . . . . . . . . . 3mm Connectors . . . . . . . . . . . . . . . . . . . . . . . . . .

Diode zener c432

Abstract: Av r76 mkp sot23-123 MMBT3904 SOT23-BCE cr3225-1210 SOT23-BCE IRS20124S 3310IR01 C6464 CR5025-2010
Contextual Info: IRAUDAMP3 120W x 6 Channel Class D Audio Power Amplifier using IRS20124S and IRF6645 By Jun Honda, Johan Strydom and Jorge Cerezo Table of Contents Page Introduction . 1

3310S06S

Abstract: A26568-ND 100w audio amplifier circuit diagram class D irs2092s irs2092 IRAUDAMP5 0805 1r CON EISA31 100watts ups circuit diagram IRAUDAMP
Contextual Info: IRAUDAMP5 120W x 2 Channel Class D Audio Power Amplifier Using the IRS2092S and IRF6645 By Jun Honda, Manuel Rodríguez and Jorge Cerezo Fig 1 CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP5 Demo Board;

IR4321

Abstract: diode z104
Contextual Info: IRAUDAMP21 90W/2Ω x 2 Channel Class D Audio Power Amplifier Using the IR4321 By Jun Honda, Alvin Rojas CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP21 Demo board; • Always wear safety glasses whenever operating Demo Board

diagram for a 12v 250w power amplifier

Abstract: 250w audio amplifier circuit diagram 200w audio amplifier circuit diagram class D IRS20957S IRAUD
Contextual Info: IRAUDAMP6 250W/8Ω x 2 Channel Class D Audio Power Amplifier Using the IRS20957S and IRF6785 By Jun Honda, Jorge Cerezo and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP6 Demo board;

IRAUDAMP22

Abstract: 1N4148 equivalent SMD
Contextual Info: IRAUDAMP22 50W/2Ω x 2 Channel Class D Audio Power Amplifier Using the IR4322 By Jun Honda, Alvin Rojas CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP22 Demo board; • Always wear safety glasses whenever operating Demo Board

PTFB192503EL

Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

PTFB192503EL V1

Contextual Info: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier

Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The

Contextual Info: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input

transistor c735

Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

PTFA043002E

Abstract: SCHEMATIC DIAGRAM 3.3kv
Contextual Info: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. Thermallyenhanced packaging provides the coolest operation available. Full gold

resistor 680 ohm

Abstract: BS121-ND PCB301 J101-J104 PVC Pipe capacitor 476 10V PCS5106CT-ND 680 ohms resistor 5 watt datasheet 476 capacitor 2.2 k ohm resistor
Contextual Info: Fiber Optic Probe Details Terry Fritz 8-17-1999 Rev. 4 VI Probe Theory The VI Probe consists of three main parts. There is a transducer that turns either high voltages or high currents into smaller signals. A transmitter that takes the small signal from the transducer and converts it into an analog light