P452 Search Results

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: P452-006 6-ft. Null Modem Gold Cable, DB25F to DB25F Highlights Superior molded cables with foil-shielding for maximum EMI/RFI protection

Contextual Info: 6-ft. Null Modem Gold Cable, DB25F to DB25F MODEL NUMBER: P452-006 Highlights Superior molded cables with foil-shielding for maximum EMI/RFI protection Gold-plated connectors provide superior conductivity Null modem cables connect two serial devices that require a null

3.7v 1500mA battery

Abstract: LP452030HA 205MAX LP-45
Contextual Info: EEMB BATTERY P452030HA Lithium Polymer Battery B rie fD a ta s he e t 1 BASIC SPECIFICATION P452030HA 1 Bat tery Type 2 Nomi nal C apaci ty 3 Nomi nal Vol tage 3. 7V 0. 2C d i s c har ge 4 Char gi ng Vol tage 4.2V± 0 .05V Typical 160mAh ( 0 . 2 C d i s c h a r g e )

G200

Abstract: f 0952
Contextual Info: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

P281 B01

Abstract: G187
Contextual Info: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style

0.047 mf capacitor

Contextual Info: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 500 watt power circuit diagram capacitor siemens 4700 35 G200 10136
Contextual Info: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description • The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. It operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold

500 watts amplifier schematic diagram

Abstract: OZ 960 OZ 960 S G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

Contextual Info: User’s Manual The sales of these products are limited for China, Hong Kong, and India. R7F0C008A/B/F, R7F0C009A/B/F 16 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications,

500 watts amplifier schematic diagram

Abstract: NGT 03 G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: Amplifier 1000w schematic diagrams schematic diagram dc inverter 1000W SCHEMATIC 1000w inverter SCHEMATIC 1000w power amplifier stereo 1000W power amplifier schematic diagrams 12v 1000W AUDIO AMPLIFIER 500w power amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA0105A-1 RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.1 November 2004 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from

resistor 220 ohm

Abstract: capacitor siemens 4700 35 resistor 4700 ohm 200B G200 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM P220ECT-ND th 2167 20237 P220E
Contextual Info: PTF 10065 30 Watts, 1.93–1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization

12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 400w audio amplifier circuit diagram TA0105A TDA2500 TRIPATH 400W stereo amplifier 400W RB-TA0105 RB-TA0105A-2 400w audio amplifier diagram 400w mosfet audio amplifier circuit diagram
Contextual Info: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TA0105A-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.2 June 2005 GENERAL DESCRIPTION The RB-TA0105A reference board is based on the TA0105A digital audio power amplifier driver from

AT27280

Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Contextual Info: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and

RCA Solid State

Abstract: CD4529B 15-V ICAN-6525
Contextual Info: I t c / Solid State l ts P 1 tí* * - ' CD4529B Types ft 'hi oes* tr r Ö f lY S ä ü CMOS Logic ICs ssi-e? : Ar§-: CMOS Dual 4-Channel Analog Data Selector High-Voltage Types 20-Volt Rating V DD = PIN 16 V s s = P IN 8 9 2 C S - 39293 FUNCTIO NAL DIAGRAM

P132-P134

Abstract: p331 TRANSISTOR P452
Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor

aw7 TRANSISTOR

Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor

A2103

Contextual Info: PTFA210301E PTFA210301F Thermally-Enhanced High Power RF LDMOS FETs 30 W, 2110 – 2170 MHz Description The PTFA210301E and PTFA210301F are thermally-enhanced, 30-watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are optimized for single- and two-carrier WCDMA

Contextual Info: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 10149
Contextual Info: PTF 10149 70 Watts, 921–960 MHz GOLDMOS Field Effect Transistor Description • • The PTF 10149 is an internally matched, 70 Watt LDMOS FET intended for cellular and GSM amplifier applications from 921–960 MHz. This device operates at 50% efficiency with 16 dB of gain. Nitride

infineon 018

Contextual Info: PTF180101 LDMOS RF Power Field Effect Transistor 10 W, DCS/PCS Band 1805–1880 MHz, 1930–1990 MHz Description Features The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization

po111

Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
Contextual Info: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

roger

Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Contextual Info: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and