PD917 Search Results

IRG4IBC30UD

Abstract: PD917
Contextual Info: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IGBT IRG4IBC30UD

Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
Contextual Info: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4IBC30UD

Contextual Info: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC

Contextual Info: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC

MAX1636

Abstract: IRF7805 IRF7807 MAX5480 schematic diagram 200v dc voltage regulator
Contextual Info: PD-91748 IRNBPS1 TM Mobile Pentium II Power Supply Evaluation Board 90% Peak Efficiency Achieved The new IRNBPS1 evaluation board offers the power supply designer a convenient way to evaluate power MOSFET performance in DC/DC converters powering next-generation mobile processors. A synchronous

MOSFET Device Effects on Phase Node Ringing

Abstract: 300khz mosfet driver IC IRF7805
Contextual Info: A Solution to Simplify 60A Multiphase Designs By John Lambert & Chris Bull, International Rectifier, USA As presented at PCIM 2001 Today’s servers and high-end desktop computer CPUs require peak currents of around 60A-80A and next generation processors will be in the order of 100A. Similarly, the transient response in today’s CPUs is in the

IRHM7250SE

Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

300C

Abstract: IRG4CH40SB IRG4PH40S
Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω

2 SK 0243

Contextual Info: PD-91799A International IQR Rectifier IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 6" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) (on) C ollector-to-Em itter Saturation Voltage 4.5V Max.

Contextual Info: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*

IRHNA53Z60

Abstract: IRHNA54Z60 IRHNA57Z60 JANSF2N7467U2 JANSG2N7467U2 JANSR2N7467U2
Contextual Info: PD-91787I IRHNA57Z60 JANSR2N7467U2 30V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/683 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57Z60 100K Rads (Si) IRHNA53Z60 300K Rads (Si) RDS(on) ID 0.0035Ω 75A*

Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation

Contextual Info: PD-91796A HFA40HF60C Ultrafast, Soft Recovery Diode FRED Features • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount VF = 1.56V Qrr = 270nC di rec M/dt = 345A/µs Description

Contextual Info: International I R Rectifier PD-91797 PRELIMINARY HEXFRED1 Ultrafast, Soft Recovery Diode Features • • • • • HFA40HF120C V R = 1200V IS O LA T E D BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic

pcb 200W audio amplifier

Abstract: IRHNB7264SE
Contextual Info: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No

Contextual Info: PD-91781C IRHQ6110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET MOSFET TECHNOLOGY SURFACE MOUNT LCC-28 Product Summary Part Number Radiation Level RDS(on) IRHQ6110 100K Rads (Si) 0.6Ω IRHQ63110 300K Rads (Si) 0.6Ω

HFA40HF120C

Contextual Info: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC

HFA40HF60C

Contextual Info: PD-91796 PRELIMINARY TM HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 1.56V Qrr = 270nC

Contextual Info: International I R Rectifier PD-91796 PRELIMINARY HEXFRED HFA40HF60C Ultrafast, Soft Recovery Diode Features • • • • • V r = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount V F = 1.56V

Contextual Info: International IO R Rectifier PD-91791 IRG4IBC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features c • D esig n ed expre ss ly for S w itc h -M o d e P o w er Su pp ly and P F C p o w er factor correction ? applications • 2 .5 k V , 6 0s insulation voltage

2 SK 0243

Abstract: 300C IRG4CH40SB IRG4PH40S
Contextual Info: PD-91799A IRG4CH40SB IRG4CH40SB IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage