geiger tube
Abstract: Geiger geiger apd pulse metal detector A0803 helium gas sensor module TO8 package photomultiplier SPMMicro3035x13 pmt amplifier circuit
Text: SPMMicro Series High Gain APD Overview cell in the SPM are varied for PDE optimization and optimal dynamic range. SPMMicro detectors come in a variety of pin package formats according to footprint requirements, levels of hermeticity, and cooling. These include glass/metal sealed transistor header package types
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laser2000
CH-1020
geiger tube
Geiger
geiger apd
pulse metal detector
A0803
helium gas sensor module
TO8 package
photomultiplier
SPMMicro3035x13
pmt amplifier circuit
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DS2109S
Abstract: DS21S07A DS2109
Text: DS2109 DS2109 Plug and Play SCSI Terminator FEATURES • Fully PIN ASSIGNMENT compliant with SCSI–1, Fast SCSI and Ultra SCSI PDI 1 28 GND R1 2 27 R18 R2 3 26 R17 R3 4 25 R16 R4 5 24 R15 R5 6 23 R14 HS–GND 7 22 TCS HS–GND 8 21 HS–GND PDO 9 20 PDE R6
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DS2109
DS21S07A
DS2109S
DS21S07A
DS2109
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X3T10
Abstract: No abstract text available
Text: DS2109 DS2109 Plug and Play SCSI Terminator FEATURES • Fully PIN ASSIGNMENT compliant with SCSI–1, Fast SCSI and Ultra SCSI PDI 1 28 GND R1 2 27 R18 R2 3 26 R17 R3 4 25 R16 R4 5 24 R15 R5 6 23 R14 HS–GND 7 22 TCS HS–GND 8 21 HS–GND PDO 9 20 PDE R6
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DS2109
DS2109
DS21S07A
DS2109,
DS2109S
X3T10
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system bus
Abstract: automatic change over switch circuit diagram circuit diagram for automatic voltage regulator SCSI-2 060396 SCSI 2 connector DS2109 DS2109S DS21S07A circuit diagram for scsi
Text: DS2109 PRELIMINARY DS2109 Plug and Play SCSI Terminator FEATURES • Fully PIN ASSIGNMENT compliant with SCSI–1, Fast SCSI and Ultra SCSI PDI 1 28 GND R1 2 27 R18 R2 3 26 R17 R3 4 25 R16 R4 5 24 R15 R5 6 23 R14 HS–GND 7 22 TCS HS–GND 8 21 HS–GND PDO
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DS2109
DS21S07A
system bus
automatic change over switch circuit diagram
circuit diagram for automatic voltage regulator
SCSI-2
060396
SCSI 2 connector
DS2109
DS2109S
DS21S07A
circuit diagram for scsi
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DS21T07
Abstract: DS2109 DS21T09 DS21T09S PdE capacitor SCSI 2 26 pin connector
Text: DS21T09 PRODUCTION DS21T09 Plug and Play SCSI Terminator FEATURES • Fully PIN ASSIGNMENT compliant with SCSI–1, Fast SCSI and Ultra SCSI PDI 1 28 GND R1 2 27 R18 R2 3 26 R17 R3 4 25 R16 R4 5 24 R15 R5 6 23 R14 HS–GND 7 22 TCS HS–GND 8 21 HS–GND PDO
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DS21T09
DS2109
DS21T07
DS2109
DS21T09
DS21T09S
PdE capacitor
SCSI 2 26 pin connector
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taa 920
Abstract: No abstract text available
Text: HYMA6V8730E18HGTG 8Mx72 buffered EDO DRAM DIMM PRELIMINARY Description The HYMA6V8730E18HGTG familiy is an 8Mx72 bits Dynamic RAM Module which is assembled 9 pieces of 8Mx8bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin printed circuit board with decoupling capacitors.
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HYMA6V8730E18HGTG
8Mx72
HYMA6V8730E18HGTG
32pin
16bit
48pin
168pin
taa 920
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DS2109
Abstract: DS21T07 DS21T09 DS21T09S
Text: DS21T09 Plug and Play SCSI Terminator www.dalsemi.com FEATURES PIN ASSIGNMENT Fully compliant with SCSI-1, Fast SCSI and Ultra SCSI Compatible with Plug and Play SCSI Profile Functional drop in replacement for the DS2109 Complementary part to DS21T07 for wide
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DS21T09
DS2109
DS21T07
300-MIL)
28-PIN
DS2109
DS21T09
DS21T09S
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DS2109
Abstract: DS21T07 DS21T09 DS21T09S "BIOS Specification"
Text: DS21T09 Plug and Play SCSI Terminator www.dalsemi.com FEATURES PIN ASSIGNMENT Fully compliant with SCSI-1, Fast SCSI and Ultra SCSI Compatible with Plug and Play SCSI Profile Functional drop in replacement for the DS2109 Complementary part to DS21T07 for wide
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DS21T09
DS2109
DS21T07
300-MIL)
28-PIN
DS2109
DS21T09
DS21T09S
"BIOS Specification"
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VT244A
Abstract: 72V1
Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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72-Bit
72V1600GS-50/-60
72V1610GS-50/-60
16Mx72
DM168-7
HYM72V1600/10GS-50/-60
72-ECC
L-DIM-168-7
VT244A
72V1
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vt244a
Abstract: No abstract text available
Text: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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72-Bit
72V8000GS-50/-60
72V8010GS-50/-60
72V8000/10GS-50
72V8000/10GS-60
DQ0-DQ71)
HYM72V8000/10GS-50/-60
L-DIM-168-4
vt244a
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74ABT244
Abstract: No abstract text available
Text: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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72-Bit
721000GS-60/-70
721010GS-60/-70
HYM721000/10GS-60/-70
L-DIM-168-2
GLD05861
74ABT244
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q207
Abstract: VT244A DM1687
Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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72-Bit
72V1600GS-50/-60
72V1610GS-50/-60
16Mx72
DM168-7
HYM72V1600/10GS-50/-60
72-ECC
L-DIM-168-7
q207
VT244A
DM1687
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capacitor 2.5 v 636
Abstract: SG-636P SG-636
Text: Crystal oscillator Epson Toyocom Product Number please contact us SG-645 SG-636 CRYSTAL OSCILLATOR : Q33645xx1xxxx00 : Q33636xx1xxxx00 SPXO SG - 645 / SG - 636 series •Frequency range Supply voltage Function External dimensions : : : : 2.21675 MHz to 135 MHz
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SG-645
SG-636
Q33645xx1xxxx00
Q33636xx1xxxx00
SG-636
capacitor 2.5 v 636
SG-636P
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Untitled
Abstract: No abstract text available
Text: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications
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72-Bit
72V4005GS-50/-60
72V4015GS-50/-60
HYM72V4005/15GS-50/-60
72-ECC
L-DIM-168-5
4Mx72
DM168-5
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bj 94 131- 6
Abstract: LV244A
Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 • 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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72-Bit
72V4000GS-50/-60
72V4010GS-50/-60
HYM72V4000/10GS-50/-60
72-ECC
L-DIM-168-5
4Mx72
DM168-5
bj 94 131- 6
LV244A
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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Untitled
Abstract: No abstract text available
Text: DS2109 P R E L IM IN A R Y DALLAS s e m ic o n d u c to r FEATURES • Fully compliant with SCSI-1, Fast SCSI and Ultra SCSI • Compatible with Plug and Play SCSI Profile • Functionally compatible with DS21S07A • Provides active termination for 18 signal lines
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DS2109
DS21S07A
DS2109
28-PIN
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist
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MCM64400
MCM64400
168-lead
400-m
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications
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72-Bit
72V2005GS-50/-60
HYM72
V2005GS-50/-60
L-DIM-168-22
DM168-22
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Untitled
Abstract: No abstract text available
Text: T Top / Lineup / Index CMOS 2M x 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8502D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting of eight MB8117800A devices. The MB8502D064AA is optimized for those applications requiring high
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MB8502D064AA
MB8117800A
168-pad
F9703
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module * 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 4M x 72 organisation * Optimized for ECC applications
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72-Bit
72V4005GS-50/-60
72V4015GS-50/-60
HTM72V
05n5GS-50/-60
72-ECC
L-DIM-168-5
DM168-5.
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module * 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 2 M x 72 organisation * Optimized for ECC applications
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72-Bit
72V2005GS-50/-60
L-DIM-168-22
HYM72V2005GS-50/-60
72-ECC
DM168-22
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VT244A
Abstract: VT244
Text: SIEMENS 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8020GS-50/-60 HYM 72V8030GS-50/-60 168 pin buffered DIMM Module * 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications * 1 bank 8 M x 72 organisation
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72-Bit
72V8020GS-50/-60
72V8030GS-50/-60
L-DIM-168-3
HYM72V8020/30GS-50/-60
72-ECC
DM168-3
VT244A
VT244
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 * 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications * Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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72-Bit
72V4000GS-50/-60
72V4010GS-50/-60
DM168-5.
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