PF 480 D25 Search Results

110N20

Abstract: pf 480 d25
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)

110N20

Abstract: 120N20 IXFK110N20 Mosfet P 110A, diode lt 429
Contextual Info: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX FK Single MOSFET Die 120N 20 110N 20 120N 20 110N 20 200V 200V 200V 200V D ^D25 120A 110A 120A 110A DS on 17m£2 20m Q, 17mQ 20m Q 200ns 200ns 200ns 200ns TO-264 AA (IXFK) >D Symbol

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFET IXFN120N20 Power MOSFETs OD N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr V DSS v DGR ^ ^ v GS VGSM ^D25 ” 200 V 120 A 17 m Q t < 250 ns /|[~ 1 G VI. " 1 I Preliminary data sheet TestConditions = R DS on =

40N30L

Abstract: ixfm40n30
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A

Diode D25 N10 P

Abstract: Diode D25 N10 R
Contextual Info: p V DSS MegaMOS FET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100V ^D25 DS on 67 A 25 mQ 75 A 20 mQ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T j = 25“ C to 150°C 100 V V«, ^ 100 V Vos v GSM Continuous ±20 V T ransient ±30

20NG0

Abstract: 15n60 DI-5 f sss 20n60
Contextual Info: VDSS MegaMOS FET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V R DS on ^D25 15 A 0.50 Q 20 A 0.35 Ü N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS Tj = 25°C to 150°C 600 Tj = 25°C to 150°C; Ros = 1 M il 600 V Vos Continuous

STM TO 247 package inductance

Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Contextual Info: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM

1534F

Abstract: 50n20
Contextual Info: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous

Diode D25 N10 R

Abstract: 365R IXYs M ir 931 Diode D25 N10 P
Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100V 100 V D ^D25 DS on 67 A 25 mi2 75 A 20 m il t ^ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family 90 G As Symbol Test Conditions V DSS Tj = 25CC to 150°C 100 V VOOB

tc 4043 p

Abstract: rc 3150 IXFN SOT227 IXFK110N07
Contextual Info: ÖIXYS HiPerFET Power MOSFETs IXFK110N07 VDSS IXFN200N07 ^D25 RDS on = 6 mQ t < 150 ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Prelim inary data Symbol TO-264 AA (IXFK) Test Conditions Maximum Ratings IXFK IXFN Tj = 25°C to 150°C

72N2

Abstract: diode 253 SMD-264 TO-264-aa 80N20
Contextual Info: OIXYS Preliminary data vDSS HiPerFET Power MOSFETs ^D25 RDS on 200 V 72 A 35 mQ 200 V 80 A 30 mQ t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t„ Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH 32N48 IXFT 32N48 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 480 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 480 V VGS VGSM Continuous Transient

IXTH35N30

Contextual Info: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Symbol VDSS ID25 Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 480

15n60

Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
Contextual Info: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C

80n48

Abstract: 80N4
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)

50N20

Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200

IXTH40N30

Abstract: D2528 N30300
Contextual Info: T X /Y " ’ v MegaMOS FET IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 25 °C to 150°C 300 V VDGR Tj = 25 °C to 150°C; RGS = 1 M il 300 V Maximum Ratings ' > V ±30 V ^D25 Tc 35N30

200N06

Abstract: 4835 b 110N06 n
Contextual Info: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)

Contextual Info: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol

80N20

Abstract: TEA 2029 A
Contextual Info: IÖIXYS HiPerFET Power MOSFETs v p DSS ^D25 DS on 200 V 72 A 35 mû 200 V 80 A 30 m a t < 200 ns IXFK72N20 IXFK80N20 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VOSS Tj = 2 5 °C tO l50°C

MB91486

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion