PG1109 Search Results

Contextual Info: PG1109 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.0

PG2020

Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Contextual Info: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6

pg2010

Abstract: PG1083 PG2020 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG2001
Contextual Info: Linear hFE from 10 mA to 2 amps Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi.„,i to 160 volts 'M h '.4 M T O —46 T O —46 T O —4 6 T O —4 6 T O —46 T O —4 6 S iîS $*‘v>

pg2004

Abstract: PG2011 pg2001 PG2006
Contextual Info: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE

1117 FG

Abstract: 2N4864 PG1101 PG1102 PG1103 PG1104 PG1105 PG1106 PG1108 PG1109
Contextual Info: '•M.- : 043592 A P I ; E LECTRONIC S_ INC -_13A0083_,_ T ^ ' Q ? 13 DE I OOMíSTS DODDOflH O LA P I ELECTRONICS INC ■Ar o IN T E R IM B U LLE TIN S u b je c t to R e visio n W ithout N otice -JUNE 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN *: v;*