PHILIPS 170 BS Search Results

BD329/BD330

Abstract: BD329 BD330
Contextual Info: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.

BSP304

Abstract: BSP304A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode

BSS110

Abstract: CGY20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS110 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification P-channel enhancement mode

BSP230

Abstract: MLC696
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13b 1997 Oct 21 Philips Semiconductors Product specification P-channel enhancement mode

BSP230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC13b 1997 Oct 21 Philips Semiconductors Product specification P-channel enhancement mode

Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP304; BSP304A FEATURES DESCRIPTION • Direct interface to C-MOS, TTL etc. P-channel enhancement mode vertical D-MOS transistor in a TO-92 variant package.

transistor SMD g 28

Abstract: smd transistor ds 65
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor BSP230 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets

transistor 2061

Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Contextual Info: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59

2PB710

Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Contextual Info: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-

Contextual Info: N AUER PHILIPS/DISCRETE bTE D bbS3T31 0D57T30 156 H A P X Philips Semiconductors D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e A u g u s t 1990 BSX49 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO

UC3425

Abstract: transistor k 2723 IC 541 BSX49 IEC134
Contextual Info: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage

BUK456

Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

722 smd transistor

Abstract: N-channel mos sot23
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH101 FEATURES PINNING - SOT23 • Very low threshold PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown 2 9 s source • Direct interface to C-MOS, TTL etc.

BUK436-60A

Abstract: 134 T31 100-P BUK436-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in

PL82

Abstract: 7R030 VS20 pas valve Z8210 scans-0018002 PHILIPS PL82
Contextual Info: zJUniukdt" IPL 82 P3NT0D3 for use as frame and Sound output valve P3NT0D3 pour utilisation en amplificatrice de sortie de base de temps image et du son PENT0DJ2 zur Verwendung als Endröhre für die vertikale Ablenkung und für die Schallwiedergabe Heating:

BUK457-500B

Abstract: GK 74 transistor
Contextual Info: bSE D m PHILIPS INTERNATIONAL 7110fl2b D D b m 4 1 361 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use In

BUK436-1000B

Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

diode sy 171 10

Abstract: BUK436-1000B diode sy 171
Contextual Info: bSE T> m PHILIPS INTERNATIONAL 711062b □Db3cH l TDM • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK457-400B

Abstract: T0220AB
Contextual Info: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK437-400B

Abstract: philips 5b
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711Dfl2fc. GGbaTlh S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

YBs transistor

Abstract: BUK437-400B
Contextual Info: PHILIPS INTERNATIONAL bSE D O 7110fl5b DDbBTlb 5^b « P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2h QQb43.31 432 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device Is Intended for use In

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.