PHOTODIODE S27 Search Results

dual photodiode

Abstract: photodiode dvd cd S4204 S2721-02 S3096-02 dvd photodiode common cathode photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204 Dual-element, plastic package photodiode S2721-02, S3096-02 and S4204 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.

S2721

Abstract: S4204 S8703 S2721-02 Si PIN PHOTODIODE DVD photodiode dvd cd S3096-02 dvd photodiode BURR SPECIFICATIONS
Contextual Info: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.

S2721

Abstract: Si PIN PHOTODIODE DVD
Contextual Info: PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements.

scintillator

Abstract: S2744-08 S3588-08
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

S2744-08

Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Contextual Info: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

Contextual Info: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance

S8558

Contextual Info: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ

S2662-01

Abstract: S3204-03 L627 S3590-03 S1790
Contextual Info: Large-Area PIN Silicon Photodiodes FEATURES Silicon photodiodes are promising devices for scintillation detec­ • Large active area: 10 X 10 mm, 10 X 20 mm, 30 X 30mm, etc. • High quantum efficiency • Low dark current • Low bias voltage operation • Sensitivity matching with BGO scintillators

GP1U271X

Abstract: GP1U27X GP1U270X GP1U272X GP1U273X GP1U277X
Contextual Info: ! PREPARED BY: SPEC. No. DATE: RKd Jiw s ,199Y APPROVED BY: SW- @>/y?/ 9 Pages PAGE DATE: ;<, aim - ELE~RONIC COMPONENTS GROUP SHARP CORPORATION REPRESEWA~ DMSION OPTO-ELECTROMC DEVICES DW. SPECIFICATION \ DEVICE SPECIFICATION FOR Infrared Light Detecting unit

GP1U271R

Abstract: sharp gp burglar alarm project GP1U272R GP1U273R GP1U277R GP1U27R PD49PI S300 PHOTODIODE S27
Contextual Info: PREPARED BY: DATE: R,kwJ mw]~i7y] u DATE: APPROVED BY: l<. && Ha/ /7s /9?t s~ . PAGE ELECTRONIC COMPONENTS GROUP SHARP CORPORATION “ REPRESENTATIVE&@ \ “ ’ ‘.F PA / ’ OPTO-ELECTRWC DEVICES DIV. SPECIFICATION DEVICE SPECIFICATION FOR Itiared Detectig unit

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

AD533

Abstract: ci tl071 LEM sensor CURRENT S1300 analog divider S-1300
Contextual Info: HAMAMATSU TECHNICAL DATA T he H m am atsu silicon PSD P osition S en sitive D etectors are op toelectron ic sensors that provide con tinu ou s position data of light spots travelin g o ve r th e ir p h o to se n sitive su r­ faces. LA R G E-A R EA PSD SERIES

AT8U

Abstract: 4-Pin, Microtech connector F0061 F0062 pal20l8b s9493 MS29673 Z75N T6832
Contextual Info: niCROTECH SEMICONDUCTORS 4 SE D > bll 7 S o V 0000024 3 B H I C S MICROTECH BS9000 Approved product list Memory Part N9 Package style BS Spec. N9 Functional Description M S 6 1 1 6 -2 2 4 PIN D IL B S 9 40 0 G 0 0 8 5 2k x 8 S R A M M S29653 18 PIN DIL B S 9400 G 0 1 12

S27C256

Contextual Info: S G S-THOnSON Û7D D I 7 ^ 2 3 7 87D 10547 ' o r u i v D r 'V ^ /^ - S * ? X jS J .C M O ^ ^ ^ ADVANCE INFORMATION The TS27C256 is a high speed 2 5 6 K U V erasable and electrically reprogram­ mable EPROM ideally suited for applications where fast turn-around and

Nellcor compatible probe 520-1011N

Abstract: finger probe nellcor 520-1011N finger plethysmography slaa274 IR LED and photodiode heart rate MS430FG437 MSP430FG437PN Nellcor compatible 520-1011N BC856ASMD
Contextual Info: SLAA274 – November 2005 A Single-Chip Pulsoximeter Design Using the MSP430 Vincent Chan, Steve Underwood . MSP430 Products This application report discusses the design of non-invasive optical plethysmography

S27C64A

Abstract: TS27C64A-25CQ TS27C64A-20CQ ah rzj TS27C64AQ 27C64a 27C64-3 TS27C64A-25VQ DIP-28 27C64-15
Contextual Info: • iZ J * J 0DS73^6 T !- S G S -T H O M S O N M U l « [ M i [ L l « ( M O ( g g ) _ S G S-THOMSON 3DE T S 2 7 C 6 4 A Q » 64K (8K x 8) CMOS UV ERASABLE PROM ■ FAST ACCESS TIME - 150ns, 200ns, 250ns, 300ns ■ COMPATIBLE TO HIGH SPEED MICROPRO­

KA9201

Abstract: KS74HCTLS04 KA9201Q TE-2012 CP2119 KA9201D KA9201M TE2012 KS74HCTLS
Contextual Info: RF-AMP KA9201 INTRODUCTION 30−SOP−375 The KA9201, which is an RF amplifier, is a monolithic integrated circuit designed for three-spot type optical pick-up of the compact disc player. It consists of an RF signal processing circuit, a Focus Error AMP, a