PJ 50 DIODE DATASHEET Search Results

di292

Abstract: CMOS spice model ci470 CI573 pj 26 diode i2931 di640 ci547 RI57 W1-300
Contextual Info: Spice Models for HOTLink spect to ground. Pin VGND should be connected to InputBuff Operation Guide system ground. Overview Pin A is the modeled input pin. The TTLinput buffĆ This memo responds to customer requests for a er is valid for all of the TTL inputs on the

di292

Abstract: pj 26 diode MJ-05 ci3022 ci470 SCM30 ci573 CMOS spice model di2910 RI57
Contextual Info: Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:

pj 59

Abstract: PJ216 pj 26 diode PJ 75 PJ 67 PJ 74 PJ-25 ci3015 pj 84 pj 50 diode
Contextual Info: fax id: 5113 Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:

strh40p10

Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

STRH12P10GYG

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

am-008

Abstract: MIL-STD-750E STRH100N6H
Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

Contextual Info: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA

Step-Up/Down

Abstract: pj 89 diode XP162A12A6PR XC9302A502 CR54 U2FWJ44N XC9301 XC9302 XP161A1265PR diode pj 70
Contextual Info: XC9301/XC9302 Series ETR0601_001c PWM,PWM/PFM Switching Step-Up & Down DC/DC Converter Controller ICs ☆Green Operation Compatible •GENERAL DESCRIPTION The XC9301/XC9302 series are step-up/down DC/DC converter controller ICs with fast, low ON resistance drivers built-in. A

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

DLP-2232MSPF

Abstract: 2232MSPF
Contextual Info: DLP2232MSPF LEAD FREE USB / MICROCONTROLLER MODULE The DLP-2232MSPF combines the same USB interface used in the DLP-2232H and the DLP-1232H modules with a Texas Instruments microcontroller with internal FRAM to form a rapid development tool. The MSP430FR5739 microcontroller is preprogrammed with basic functionality for accessing the

I2C dma applications msp430

Abstract: MSP430FR5969 MSP430FR5949IRHA 5E002 SLAU367
Contextual Info: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V

SLAU320

Abstract: SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H
Contextual Info: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V

MSP430FR5949IRHA

Abstract: SLAU320 MSP430FR5949 SLAU367 MSPTS430RGZ48C MSP430FR5847 MSP430FR5969IRGZ PJ7 diode msp430 uart
Contextual Info: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V

MSP430FR5849IRHA

Contextual Info: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16 MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V