PNP 2SD Search Results

c2611

Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
Contextual Info: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

D2285

Abstract: 2SB15 2SB1511 2SD2285 EN3716
Contextual Info: Ordering number: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications •Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = —0.5V(PNP), 0.4V(NPN) max.

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.

2SD401A

Abstract: 2SB546A 60L120
Contextual Info: ÆàMOSPEC PNP SILICON POWER TRANSISTORS PNP 2SB546A . designed for use in general purpose power amplifier,vertical output application FEATURES: * Collector-Emitter Voltage VCEo= 150V Min * DC Current Gain hFE= 40-200@lc= 400mA * Complementary to NPN 2SD401A

2SB1116

Abstract: 2SB1116A
Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: UTC 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Complement to 2SD1616/A APPLICATIONS * Audio Frequency Power Amplifier * Medium Speed Switching 1 TO-92 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: Ordering num ber: EN3714 2SB1508/2SD2281 No.3714 PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage: VcE sat = —0.5V(PNP), 0.4V(NPN)max.

Contextual Info: 2SB1732 / 2SB1709 Datasheet PNP -1.5A -12V Middle Power Transistor lOutline Parameter Value TUMT3 -12V -1.5A VCEO IC TSMT3 Collector Collector Base Base Emitter Emitter 2SB1709 SC-96 2SB1732 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SD2702, 2SD2674

50W AMP 2SD718 2SB688

Abstract: 2SB688 2SD718 FC-7 3P transistor 2sd718 transistor 2SB688 2sd718 amplifier RS3100 m0spec
Contextual Info: Æ&m o s p e c HIGH-POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application . 2SB688 FEATURES: * Recommend for 45 - 50W Audio Frequency Amplifier Output stage. * Complementary to 2SD718 8 AMPERE POWER

PN3906 TRANSISTOR PNP

Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
Contextual Info: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92

2SB713

Abstract: transistor npn 100w amplifier 2SD751
Contextual Info: PANASONIC INDL/ELEK -CIO 15E D • t,=132852 0DlD4tl 1 Silicon Epitaxal Base Mesa Transistor 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

EN3716

Abstract: 2039A 2SB1511
Contextual Info: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.

nec 2501

Abstract: ic nec 2501 2SB1572 2SD2403
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 2.5±0.1

2SB920

Abstract: 2SD1236
Contextual Info: 2SB920/2SD1236 PNP/NPN Epitaxial Planar-Type Sili con Transister For General Purpose Large-Current Switching satures: * Very Low Collector Saturation Voltage:VCE sat =-0.5V(PNP),0.4V(NPN)max. * Wide Safety Operation Area . ( ) is for 2SB920, the description other than which are common to 2SB920,2SD1236.

Contextual Info: 2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB776 NPN/2SD886 Unit Collector-Emitter Voltage

2SB817

Abstract: 2SD1047 2s8817 transistor 2sd1047 transistor 2sb817
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP 2SB817 2SB817 transistor is designed for use in general purpose power amplifier,application FEATURES: * Collector-Emitter Voltage V CE0= 140V Min * DC Current Gain hFE= 60-200@ lc= 1.0A * Complement to 2SD1047

2SB772 sot-89

Abstract: TRANSISTOR SMD sot-89 smd 2sd882
Contextual Info: Transistors SMD Type PNP Silicon Power Transistor 2SB772 SOT-89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● PNP transistor High current output up to 3A 2.50±0.1 4.00±0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.53±0.1 0.80±0.1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION Complement to UTC 2SD1616/A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K

Contextual Info: Ordering num ber: EN1046B 2SB919/2SD1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emltter saturation voltage: VcE sat =—'0.5V(PNP), 0.4(NPN) max.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION Complement to UTC 2SD1616/A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-89 2SB1116G-x-AB3-B 2SB1116L-x-T92-B 2SB1116G-x-T92-B

2SB713

Abstract: 2SD751
Contextual Info: PANASONIC INDL/ELEK -CIO 12E bTaaasa oüicmbi i D Silicon Epitaxal Base Mesa Transistor T-33~ 2 2SB713 PNP) 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Sym bol Rating

transistor npn 100w amplifier

Contextual Info: PANASONIC INDL/ELEK -CIO 12E D t.T3aäSa OD ID Mbl 1 Silicon Epitaxal Base Mesa Transistor T - 33-2.1 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

2SD882 pnp

Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
Contextual Info: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO