PNP GERMANIUM LOW POWER TRANSISTOR Search Results

pnp germanium to36

Abstract: NTE330 Germanium power
Contextual Info: NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low saturation voltage capability for high efficiency performance in motor drive controls and low loss regulators.

SMO-14

Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
Contextual Info: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication

nte102

Abstract: NTE103 vpt 20 germanium transistors NPN NTE10-3
Contextual Info: NTE102 PNP & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications. Features: D Low Collector–Emitter Saturation Voltage:

NTE158

Abstract: germanium pnp transistor Germanium power
Contextual Info: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V

germanium Power Transistor

Abstract: Vcb-60V NTE27 Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

germanium Power Transistor

Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

NTE158

Abstract: germanium audio Germanium power
Contextual Info: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V

NTE158

Abstract: Germanium power
Contextual Info: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V

MR830

Abstract: MP601 germanium power transistors MP600 MP602 MP603 Germanium power
Contextual Info: MP600 GERMANIUM thru PNP Germanium power transistors designed for highcurrent switching applications requiring low saturation voltages, short switching times and good sustaining volt­ age capability. • Alloy Diffused Epitaxial Construction • Low Saturation Voltages —

Contextual Info: , {Jna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4277 (GERMANIUM) PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages.

bjt specifications

Abstract: 2N652A power BJT PNP
Contextual Info: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N652A Online Store 2N652A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1303

Contextual Info: 2N1303 Ge PNP Lo-Pwr BJT 3.90 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1303 Online Store 2N1303 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

bjt specifications

Contextual Info: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Part Number: 2N651A Online Store 2N651A Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

NTE179

Contextual Info: NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating

2N1305

Abstract: pnp germanium low power bjt
Contextual Info: 2N1305 Ge PNP Lo-Pwr BJT 13.50 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N1305 Online Store 2N1305 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

germanium transistors PNP

Abstract: 2N1307 germanium PNP
Contextual Info: 2N1307 Ge PNP Lo-Pwr BJT 2.75 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N1307 Online Store 2N1307 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N700

Contextual Info: 2N700 Ge PNP Lo-Pwr BJT 12.98 Transistors Bipolar Germanium PNP Low-Power Tran. Page 1 of 1 Enter Your Part # Home Part Number: 2N700 Online Store 2N700 Diodes Ge PN P Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

MP1613

Abstract: MPT613 adc 515 pnp germanium low power transistor 100-C Germanium power
Contextual Info: MP1613 GERMANIUM S T Y L E 1: PIN I. B A S E 2. E M IT T E R C A S E: C O L L E C T O R Medium-current germanium PNP power transistor, designed for use in 12 Volt: vertical deflection circuits in television receivers; features: high breakdown voltage, low leakage current, and low saturation volt­

2N404 transistor

Abstract: 2N404 VCE0-20V Germanium power
Contextual Info: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage

Contextual Info: <$£mi-t,onauctoi ^Products., IJna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4048 PNP germanium power transistors designed for high-cur rent applications requiring high gain and extremely low saturation voltage.

2N1195

Abstract: Germanium power
Contextual Info: AMENDMENT 1 19 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N1195 dated 29 June 1967, and is mandatory for use by all Departments and Agencies of the Department of Defense. Page .5 Table I, Group A Inspection, Subgroup 3:

2N1224

Abstract: 2N1225
Contextual Info: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use

germanium transistor pnp

Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Contextual Info: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies

army sc-c-179495

Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Contextual Info: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.