PNP IC 7A Search Results

Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High Collector Current : Ic=-7A. • Low Collector-Emitter Saturation Voltage. : VCE sat =-0.5V(Max.) at Ic=-4A.

2SD843

Abstract: 2SB753
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB753 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -4A ·High Collector Power Dissipation ·Complement to Type 2SD843

2SB1289

Abstract: 2SD1580
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580

Inverter high voltage power transistor

Abstract: 2SB825 2SD1061
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.

2SB1255

Abstract: 2SD1895
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS

2SB827

Abstract: 2SD1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063

2SB1503

Abstract: 2SD2276 darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS

2SB1560

Abstract: 2SD2390
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2390 APPLICATIONS

2sd2439

Abstract: 2SB1588 transistor 2sb1588
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2439 APPLICATIONS

2SB1558

Abstract: 2SD2387
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 APPLICATIONS

2SB1290

Abstract: 2SD1833 TRANSISTOR 2SD1833
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833

2SD844

Abstract: 2SB754 2SB754 equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB754 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max) @IC= -4A

2SA1879

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -80(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A

transistor 2sb883

Abstract: 2SB883 2SD1193
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -7A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -7A

2SB925

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB925 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications.

KTB1370

Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.

Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.

2SD568

Abstract: K 4080 2SB707
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB707 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed

2sb1018

Abstract: tag c9 240
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A

2SB1097

Abstract: 2SD1588
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 APPLICATIONS ·Designed for low-frequency power amplifiers and low speed

2SD569

Abstract: 2SB708
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB708 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD569 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed

2sa112

Abstract: 2SA1129 2SC2654
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.3(V)(Max)@IC= -3A ·Large Current Capability-IC= -7A ·Complement to Type 2SC2654 APPLICATIONS ·Designed for mid-switching applications, and is ideal for

A1640

Abstract: A1640 pnp transistor a1640 BTA1640I3
Contextual Info: Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 CYStech Electronics Corp. BVCEO IC RCESAT PNP Epitaxial Planar Power Transistor BTA1640I3 -50V -7A 70mΩ Features • Low collector-emitter saturation voltage, VCE sat = -0.4V(max) @ IC = -3A, IB=-0.15A