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    PNP MJE350 Search Results

    PNP MJE350 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP MJE350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE350

    Abstract: No abstract text available
    Text: ON Semiconductort MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


    Original     		PDF MJE350 r14525 MJE350/D MJE350

    MJE350

    Abstract: No abstract text available
    Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


    Original     		PDF MJE350 r14525 MJE350/D MJE350

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE POWER TRANSISTOR PNP SILICON


    Original     		PDF MJE350

    MJE350 b c e

    Abstract: Power Transistors TO-126 Case MJE350
    Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		PDF MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350

    8805 VOLTAGE REGULATOR

    Abstract: MJE350 b c e MJE350 pnp mje350
    Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		PDF MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 b c e MJE350 pnp mje350

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original     		PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    JE350

    Abstract: No abstract text available
    Text: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


    Original     		PDF MJE350 MJE340 MJE350/D JE350

    JE350

    Abstract: No abstract text available
    Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


    Original     		PDF MJE350G MJE340 MJE350/D JE350

    je350g

    Abstract: No abstract text available
    Text: MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • • • •


    Original     		PDF MJE350G MJE340 MJE350/D je350g

    JE350

    Abstract: JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE350 JE350 JE350G je350 transistor MJE350G je-350 MJE350 transistor mje350g

    MJE350

    Abstract: TRANSISTOR MJE350 motorola mje350 pnp mje350 MJE350-D MJE350 PIN
    Text: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated


    Original     		PDF MJE350/D* MJE350/D MJE350 TRANSISTOR MJE350 motorola mje350 pnp mje350 MJE350-D MJE350 PIN

    JE350

    Abstract: je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE350 MJE350/D JE350 je350g je350 transistor MJE350G je-350 MJE350 to225 MJE350 PIN

    mje350 transistor

    Abstract: Motorola bipolar transistor MJE350 MJE350 PIN
    Text: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated


    Original     		PDF MJE350/D* MJE350/D mje350 transistor Motorola bipolar transistor MJE350 MJE350 PIN

    Untitled

    Abstract: No abstract text available
    Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. http://onsemi.com Features • High Collector−Emitter Sustaining Voltage −


    Original     		PDF MJE350 MJE350/D

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


    Original     		PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original     		PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


    Original     		PDF BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251

    BU108

    Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


    Original     		PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL


    OCR Scan     		PDF MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238

    JE350

    Abstract: je 350
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.


    OCR Scan     		PDF MJE350 O-22SAA JE350 je 350

    AN-415

    Abstract: MJE350
    Text: MJE350 SILICON PLASTIC M ED IU M POWER PNP SILICO N TRANSISTOR 0.5 AMPERE POWER TRANSISTOR PNP SILICON . . . designed fo r use in line operated audio and television applications and as low pow er, line-operated series pass and switching regulators. • High Collector-E m itter Sustaining Voltage —


    OCR Scan     		PDF MJE350 AN-415) AN-415 MJE350

    JE350

    Abstract: je350 transistor je-350 MJE350 MOTOROLA
    Text: MOTOROLA Order this document by MJE350/D SEMICONDUCTOR TECHNICAL DATA M JE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . d e sig ned for use in lin e -o p e ra te d ap p lica tio n s such as lo w power, lin e -o p e ra te d


    OCR Scan     		PDF MJE350/D JE350 O-225AA je350 transistor je-350 MJE350 MOTOROLA