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    PNP POWER Search Results

    PNP POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
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    PNP POWER Price and Stock

    Tripp Lite OMNISMART-1050-PNP

    OmniSmart 120V 1050VA 705W Line-Interactive UPS, Tower, USB port
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com OMNISMART-1050-PNP 1
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    PNP POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c2611

    Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
    Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO


    Original     		PDF O-126 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SC3417 BD437 BD238 c2611 BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238

    NTE192

    Abstract: NTE192A PNP transistor 263 NTE193A NTE193
    Text: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These


    Original     		PDF NTE192 NTE193 NTE192A NTE193A /NTE193 /NTE193A O92HS 1000cps NTE192 NTE192A PNP transistor 263 NTE193A NTE193

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Text: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR

    TRANSISTOR SMD MARKING CODE 2P

    Abstract: DFN2020 transistor marking codes 2P transistor footprint
    Text: PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5260PAP DFN2020-6 OT1118) PBSS4260PANP. PBSS4260PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2P DFN2020 transistor marking codes 2P transistor footprint

    PBSS4350SPN

    Abstract: PBSS4350SS PBSS5350SS
    Text: PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat BISS transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350SS OT96-1 PBSS4350SPN PBSS4350SS PBSS5350SS PBSS4350SPN PBSS4350SS

    XXZPB100

    Abstract: XX7V1A1PAM12 XX7V1A1NAM12 XZC-C12FDM40B PUSH BOTON xzcc12FCM40B XZ-CP1241L10 XZC-P1141L10 manuel xxzpb100 voyants led
    Text: XX7V1A1.AM12 XX7V1A1NAM12: NO / NPN output; Sortie NPN / N.O.; SCHLIESSER / NPN-Ausgang; Salida NO / NPN; Uscita NO / NPN; Saída NO / NPN XX7V1A1PAM12: NO / PNP output; Sortie PNP / N.O.; SCHLIESSER / PNP-Ausgang; Salida NO / PNP; Uscita NO / PNP; Saída NO / PNP


    Original     		PDF XX7V1A1NAM12: XX7V1A1PAM12: XXZPB100 XX7V1A1PAM12 XX7V1A1NAM12 XZC-C12FDM40B PUSH BOTON xzcc12FCM40B XZ-CP1241L10 XZC-P1141L10 manuel xxzpb100 voyants led

    TRANSISTOR SMD MARKING CODE 2s

    Abstract: TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
    Text: PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat BISS transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5112PAP DFN2020-6 OT1118) PBSS4112PANP. PBSS4112PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041SP OT96-1 PBSS4041SN PBSS4041SPN

    250 B 340 smd Transistor

    Abstract: 4032SP
    Text: PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032SP OT96-1 PBSS4032SN PBSS4032SPN 250 B 340 smd Transistor 4032SP

    250 B 340 smd Transistor

    Abstract: No abstract text available
    Text: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021SP OT96-1 PBSS4021SN PBSS4021SPN 250 B 340 smd Transistor

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041SP OT96-1 PBSS4041SP OT96-1 PBSS4041SN PBSS4041SPN

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101

    mx 2sb834

    Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
    Text: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO


    Original     		PDF O-220 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 mx 2sb834 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073

    Untitled

    Abstract: No abstract text available
    Text: PBSS4032SP 30 V, 4.8 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4032SP OT96-1 PBSS4032SN PBSS4032SPN

    Untitled

    Abstract: No abstract text available
    Text: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat BISS transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021SP OT96-1 PBSS4021SN PBSS4021SPN

    Untitled

    Abstract: No abstract text available
    Text: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5230PAP DFN2020-6 OT1118) PBSS4230PANP. PBSS4230PAN. AEC-Q101

    SMD marking A63

    Abstract: transistor a105 -20/a105 transistor
    Text: PBSS4021SP 20 V, 6.3 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4021SP OT96-1 PBSS4021SN PBSS4021SPN SMD marking A63 transistor a105 -20/a105 transistor

    TRANSISTOR SMD MARKING CODE SP

    Abstract: PBSS4041SN
    Text: PBSS4041SP 60 V, 5.9 A PNP/PNP low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4041SP OT96-1 PBSS4041SN PBSS4041SPN TRANSISTOR SMD MARKING CODE SP PBSS4041SN

    2N924

    Abstract: 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025
    Text: je m lt r o n ic r sem iconductors s s S em itronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Polarity tm Power Dissipation @ 25°C mW t . ij (°C) BVcbo (volts) PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP


    OCR Scan     		PDF 2n327a 2n327b 2n32ba 2n328b 2n329a 2N924 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025

    2N6258

    Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
    Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN


    OCR Scan     		PDF 2N4900 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N6258 2N5133 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278

    2N217s

    Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
    Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP


    OCR Scan     		PDF 2N327A 2N327B 2N326A 2N328B 2N329A 2N32SB 2N330A 2N923 2N924 2N925 2N217s 2N1028 2N936 2NJ228 2n1854 2N3346 2N16S5 2N1025

    d2 SMD TRANSISTORs pnp npn

    Abstract: BCS59 2n2222a smd BC558B BC558C BC559 BC858B BC858C BC859 SMD marking bcw60
    Text: SMDTransistors SOT-23 Case 350mW Proelectron Series—Confd « TYPE NO. DESCRIPTION BC858B BC858C BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE PNP LOW NOISE


    OCR Scan     		PDF OT-23 350mW BC858B BC558B BC858C BC558C BC859 BC559 BC859A BCS59A d2 SMD TRANSISTORs pnp npn BCS59 2n2222a smd SMD marking bcw60

    BAX65

    Abstract: BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106B BD107A
    Text: SEMELAB LTD 37E D • A1331A7 GODDQTfi 1 J S E M E L A B MANUFACTURING E ■c Polarity Package VCEO cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T05 T05 45 45 64 64 0.6 0.6 0.1 0.1 j i r / PNP PNP PNP PNP PNP T05 T05 T05 T05 T05 64 32 32 64 32 0.1


    OCR Scan     		PDF BAX65 BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106AN BD106B BAX65 BCY34A BCY58 BCY59 BCY79 BD107A

    k 117

    Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
    Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1


    OCR Scan     		PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCW35 BCY30A BCY31A T0532 BCY39A