PO11V5 Search Results

ATMEL 634

Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded

AOI222

Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

AVR 8515 microcontroller datasheet

Abstract: Atmel 826 ATL35 ATMEL 222 32 bit risc processor using vhdl Atmel 542
Contextual Info: ATL35 GateArray/Embedded Array-1.4-03/02 ATL35 Gate Array/Embedded Array Description. 1-2 ATL35 Array Organization: Table . 1-2

AVR 8515 microcontroller

Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Contextual Info: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit

tristate buffer

Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to

54175

Abstract: PO11V5 16889 49035 56374 28548 58128 13.562 93408 atmel 246
Contextual Info: ERRATA SHEET DATE: April 2009 TO: Aerospace customers SUBJECT: 5V COMPLIANT BUFFERS WITH CORE POWERED AT 2.5V A 5V compliant buffer is a buffer powered by a 5V supply which is able to tolerate with negligible leakage current and without any reliability problems 5V signals (input buffer and pullup/pull-down) or drive 5V signals on its output (output buffer).

Atmel 826

Abstract: atmel 952 Atmel 642 credence tester sbl 20100 atmel 530 dsp oak pine "VLSI TECHNOLOGY" ARM7TDMI DSP atmel 042 ATMEL 740
Contextual Info: ATL35 Series . Design Overview Table of Contents Section 1 ATL35 Series . 1-1

MH1099

Abstract: MH1242 PO11V5 4138G
Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
Contextual Info: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E atmel 838 atmel edac dsp radiation hard
Contextual Info: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

atmel 216

Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
Contextual Info: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores

1025460

Abstract: 7805 UA1044 UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160
Contextual Info: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs Conversion to 1,000,000 gates Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads

ATMEL 634

Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
Contextual Info: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

USD210

Abstract: USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • High-performance ULC Family Suitable for Large-sized CPLDs and FPGAs From 46K Gates up to 780K Gates Supported From 18 Kbit to 390 Kbit DPRAM Compatible with Xilinx or Altera

Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

TEMIC PLD

Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The

USD210

Abstract: USD228 USD256 USD312 USD384 USD432 USD492 USD594 USD700
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • High-performance ULC Family Suitable for Large-sized CPLDs and FPGAs From 46K Gates up to 780K Gates Supported From 18 Kbit to 390 Kbit DPRAM Compatible with Xilinx or Altera

PO11V5

Contextual Info: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs From 40K gates up to 780K gates supported Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads

Contextual Info: UA1 Series 0.35 µm ULC Series Description The UA1 series of ULCs is well suited for conversion large sized CPLDs and FPGAs. Devices are implemented in high–performance CMOS technology with 0.35–µ m drawn channel lengths, and are capable of supporting

4110L

Abstract: ATMEL 622 MH1RT QML A101 A201 MH1099E MH1156E MH1242E MH1332E
Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

ATMEL 634

Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)

Contextual Info: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)

A101

Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
Contextual Info: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC

UA1044

Abstract: UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160 UA1184 UA1208
Contextual Info: UA1 Series 0.35 µm ULC Series Description The UA1 series of ULCs is well suited for conversion large sized CPLDs and FPGAs. Devices are implemented in high–performance CMOS technology with 0.35–µ m drawn channel lengths, and are capable of supporting