POWER FREDFET TRANSISTOR Search Results

BSS125

Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line
Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)

FREDFET

Abstract: 8A74
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF SIE D fl235b05 0 0 4 2 n s SG5 • S I E G -T -3 5 -/ / SIEMENS SIPMOS Leistungstransistoren SIPMOS* Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse

0AB7

Abstract: BUZ p channel BUZ384
Contextual Info: SIEMENS SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancement types with high speed reverse diodes (N channel) Typ Type M ds ^D S(on)m ax Id P tot V n A W Bestellnummer Ordering code

SIPMOS application note

Abstract: SIEMENS MOSFET application BSS125
Contextual Info: SIEMENS 5 Application Notes FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components b y W a lt e r S c h u m b r u tz k i With higher clock frequencies in power switches inverse-capable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (< 2 kW) MOS half­

diode T-71

Abstract: BUK657-400B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK655-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery

BUK617-500AE

Abstract: SVM91 TRANSISTOR C 557 B W 21
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

BUZ210

Abstract: Siemens t35 a1105 BUZ 215 FREDFET s132 C67078-A1400-A2 C67078-A3205-A2 C67078-A3207-A2 C67078-A3209-A2
Contextual Info: SIE M EN S A K T I E N 6 E S E L L S C H A F SIE T> WÊ û 2 3 5 bO S GOMSnS SGS B I S I E 6 t S IE M E N S 35 ' / / SIPMOS Leistungstransistoren SIPMOS® Power Transistors FREDFET-Anreicherungstypen mit schneller Inversdiode N-Kanal FREDFET enhancem ent types with high speed reverse

BUK457-500B

Abstract: PHP8N50 PHW9ND50 FREDFET
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor FREDFET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor incorporating a Fast Recovery Epitaxial Diode FRED . This gives improved switching performance in half-bridge

ht 25 transistor

Abstract: BUK638-500B
Contextual Info: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: PHILIPS INTERNATIONAL bSE » E9 711GÖEb 0Db431b Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

BUK637-400A

Abstract: BUK637-400B
Contextual Info: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control

BUK637-600A

Abstract: BUK637-600B BUK637-600C
Contextual Info: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.

400v p - CHANNEL mos

Abstract: STH9N50D
Contextual Info: SGS-THOMSON STH9N50D M N - CHANNEL ENHANCEMENT MODE _ FREDFET PRELIMINARY DATA TYPE STH9N50D V dss RDS on Id 500 V 0.85 a 9 A • POWER MOS TRANSISTOR WITH FAST RECOVERY BULK DIODE: COMPLETE DIODE SPECIFICATION . PARTICULARLY SUITABLE FOR BRIDGE

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

BUK637-400A

Abstract: BUK637-400B P02S
Contextual Info: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Contextual Info: N AMER PHILIPS/ DISCRE TE DQEObSS b 5SE D PowerMOS transistor Fast Recovery Diode FET BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

FUH -29A001B

Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Contextual Info: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 OOaablQ fl ■ PowerMOS transistor Fast Recovery Diode FET BUK655-450B T-31-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

MC 140 transistor

Abstract: "MC 140" transistor transistor mc 140 BUZ385 T-39-13 MC 150 transistor
Contextual Info: N AMER PHILIPS/DISCRETE QbE 3> PowerMOS transistor • bb53131 0014714 1 BUZ385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor

BUK657

Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery