POWER JUNCTION FET Search Results

Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation

Contextual Info: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation

Hitachi DSA002749

Contextual Info: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor equivalent table

Contextual Info: Letter Symbol and Graphical Symbol 8.1 Letter symbol Table 1 General Description Symbol Rth Rth j-c Rth j-s noise figure allowable power dissipation therm al resistance therm al resistance, junction to case therm al resistance, (junction to stud) Rth j-a

Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VH F AMPLIFIER S O T-23 . N F = 2 .5 d B T Y P • I Y fs I =9-0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol G ate-D rain Voltage G ate-C urrent Power Dissipation Junction Tem perature

vy 5 fet

Contextual Info: SILICON N-CHANNEL JUNCTION FET KSK161 FM TUNER VH F AMPLIFIER T O -92 . N F = 2 .5 d B T Y P • I Y fs I =9-0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol G ate-D rain Voltage G ate-C urrent Power Dissipation Junction Tem perature

transistor NEC D 582

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: firn The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

NE1280100

Abstract: NE1280200 NE1280400
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS CHIP DIMENSIONS unit: µm DESCRIPTION The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

Contextual Info: Preliminary Datasheet HAF2026RJ R07DS0122EJ0300 Previous: REJ03G1255-0200 Rev.3.00 Sep 01, 2010 Silicon N Channel Power MOS FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Contextual Info: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate

HAF2017

Abstract: HAF2017-90L HAF2017-90S HAF2017-90STL
Contextual Info: HAF2017 L , HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z) Rev.2.00 Apr.13.2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in

p322 mosfet

Abstract: L6246 PQFP44 PARKING WARNING SYSTEM
Contextual Info: L6246 12V VOICE COIL MOTOR DRIVER PRODUCT PREVIEW 12V ±10% OPERATION 3A MAXIMUM CURRENT CAPABILITY 0.25Ω MAXIMUM ON RESISTANCE OF EACH POWER DMOS AT A JUNCTION TEMPERATAURE OF 25°C CLASS AB POWER AMPLIFIERS LOGIC AND POWER SUPPLY MONITOR POWER ON RESET

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Tsp = 25 °C Drain current (DC) Tamb = 25 °C Total power dissipation Junction temperature

CP3001

Abstract: L6246 PQFP44
Contextual Info: L6246 12V VOICE COIL MOTOR DRIVER 12V ±10% OPERATION 3A MAXIMUM CURRENT CAPABILITY 0.3Ω MAXIMUM ON RESISTANCE OF EACH POWER DMOS AT A JUNCTION TEMPERATAURE OF 25°C CLASS AB POWER AMPLIFIERS LOGIC AND POWER SUPPLY MONITOR POWER ON RESET PARKING FUNCTION WITH SELECTABLE

Contextual Info: Preliminary Datasheet RJE0617JSP R07DS1070EJ0300 Rev.3.00 Jul 11, 2013 –60V, –1.5A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Preliminary Datasheet RJE0617JSP R07DS1070EJ0100 Rev.1.00 May 16, 2013 –60V, –1.5A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Preliminary Datasheet RJE0617JSP R07DS1070EJ0400 Rev.4.00 Sep 13, 2013 –60V, –1.5A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Preliminary Datasheet RJE0617JSP R07DS1070EJ0200 Rev.2.00 Jun 06, 2013 –60V, –1.5A, P Channel Thermal FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: NE1280100 NE1280200 NE1280400 KA-BAND MEDIUM POWER HETERO-JUNCTION FET OUTLINE DIMENSIONS Units in jam FEATURES NE1280100 • HIGH FREQUENCY OPERATION: Up to 40 GHz • HIGH POWER OUT: Up to 1/2 Watt • HIGH LINEAR GAIN: Over 10 dB at 18.7 GHz • HIGH EFFICIENCY: Up to 23% PAE

Contextual Info: Target Specifications Datasheet RJF0611DPD R07DS0716EJ0100 Rev.1.00 Apr 17, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0605DPD R07DS0714EJ0100 Rev.1.00 Apr 17, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

Contextual Info: Target Specifications Datasheet RJF0611DPE Silicon N Channel MOS FET Series Power Switching R07DS0717EJ0100 Rev.1.00 Apr 17, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in

cross reference zener diodes

Abstract: power transistors cross reference GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: Table off Contents Page Index / Cross Reference 2 Surface Mounted Devices 47 Small Signal Transistors 65 Power Transistors 93 Junction FETs 109 Silicon Diodes 113 Germanium Diodes 117 Zener Diodes 119 Current Limiting Diodes 135 Rectifiers 157 Bridge Rectifiers