POWER MOS TRANSISTOR SELECTION Search Results

2sk2139

Abstract: IEI-1213 MEI-1202 MF-1134 MP-45F
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N-Channel Power MOS Field Effect Transistor in millimeters designed for high voltage switching applications. 10.0±0.3

transistor 9567

Abstract: transistor J128 philips catalog potentiometer 72741 MDA480 MOS marking 843 D 843 Power Transistor MDA483 transistor K 1413
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification November 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF521 PIN CONFIGURATION • High power gain • Easy power control ook, halfpage

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

grm708

Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

RD02MUS1

Abstract: RD02MUS1-101 T112 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD70HVF1-101

Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3

RD20HMF1

Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers

TRANSISTOR D 1765 320

Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

1299 mosfet

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3

RD70HVF

Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD16HHF1 application notes

Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD70HVF1

Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD60HUF

Abstract: mitsubishi rf 100OHM RD60HUF1 RD60HUF1-101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

transistor+SMD+12W+MOSFET

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

Contextual Info: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.

100OHM

Abstract: RD45HMF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

RD70HHF

Abstract: RD70HHF1-101 RD70HHF1 10Turns mosfet HF amplifier TRANSISTOR D 1765 738
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

AN-UHF-098

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15

MOSFET POWER TRANSISTOR

Contextual Info: < Silicon RF Power MOS FET Discrete > RD20HMF1 RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for 900MHz-band RF power amplifiers 18.0+/-0.3 applications.

transistor D 1666

Abstract: transistor 801 diagrams
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05