POWER MOSFET 150A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT150N04 Power MOSFET 150A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT150N04 is a N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF1404 Preliminary Power MOSFET 162A, 40V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF1404 is a N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON and high switching speed.

UTT150N03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC’s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior

UTT150N03

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC’s advanced trench technology to provide customers with a minimum on-state resistance, low gate charge and superior

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT150N06 Power MOSFET 150 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT150N06 is an N-channel Power Trench MOSFET, using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low

Contextual Info: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

irfps40n60k

Abstract: IRFPS
Contextual Info: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

AUIRF7319Q

Abstract: 96364B 8763A
Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

96364

Contextual Info: PD - 96364 AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

Contextual Info: PD - 96364B AUTOMOTIVE MOSFET AUIRF7319Q HEXFET Power MOSFET Features l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Automotive [Q101] Qualified* Lead-Free, RoHS Compliant S1 N-CHANNEL MOSFET

PWM solenoid driver

Abstract: LM9061 LM9061M LM9061MX M08A NDP706A UVSO 4
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline surface mount package. General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as

Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline surface mount package. General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as

5S45S

Contextual Info: Provisional Data Sheet No. PD 9.1295A International IOR Rectifier IRFY9240CM HEXFET POWER MOSFET P-CHANNEL -200Volt, 0.51Î2 HEXFET Product Summary International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors.The effi­

IRFM9240

Abstract: JANTX2N7237 JANTXV2N7237
Contextual Info: PD - 90497E POWER MOSFET THRU-HOLE TO-254AA IRFM9240 JANTX2N7237 JANTXV2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D IRFM9240 0.51Ω -11A HEXFET® MOSFET technology is the key to International

IRF 450 MOSFET

Abstract: IRFM240 JANTX2N7219 JANTXV2N7219
Contextual Info: PD - 90555D POWER MOSFET THRU-HOLE TO-254AA Product Summary IRFM240 JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 Ω 18A HEXFET® MOSFET technology is the key to International

IRFN9240

Abstract: JANS2N7237U JANTX2N7237U JANTXV2N7237U
Contextual Info: PD - 91554E POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN9240 JANTX2N7237U JANTXV2N7237U JANS2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL Part Number RDS(on) ID IRFN9240 0.51Ω -11A HEXFET MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International