POWER MOSFET 4600 Search Results

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

IRFM054

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM054 RDS(on) 0.027 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90709B POWER MOSFET THRU-HOLE TO-254AA IRFM054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.027 Ω IRFM054 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PRELIMINARY Fuji Power MOSFET Target Specification 2SK3523-01R 1.Scope This specifies Fuji Power MOSFET 2SK3523-01R 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview TO-3PF 5.Absolute Maximum Ratings at Tc=25°° C unless otherwise specified

DIODE s3l

Abstract: POWER MOSFET 4600 DIODE FAST S2L diode S3L 49 diode S3L 13 diode S3L 54 DIODE s2l 54 s3l 02 diode diode S3L 39 MOSFET 4600
Contextual Info: Preliminary Data Sheet ú0560 N-Channel Power MOSFET Array Description Features The ú0560 contains six N-channel power MOS FET with VDSS = 500 V in half-bridge configuration. These enhancement-mode Power MOSFET array utilizes a DMOS structure and alpha’s dielectric

OPTIMOS p3

Abstract: BSB029P03NX3 BSB029P03NX3G
Contextual Info: n-Channel Power MOSFET OptiMOS BSB029P03NX3 Data Sheet 1.92, 2011-03-21 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB029P03NX3 G 1 Description OptiMOS™ P3 -30V products are class leading power P-Channel MOSFETs for highest power density and energy efficient solutions. Lowest on state resistance

2sk4110

Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3

circuit diagram of very long range remote control

Abstract: IC 567 8pin hk relay 12v 5 pin MD-5031 2314 mosfet amp 4546 marking 221 sop8 MD5031T
Contextual Info: CAT.No.TU 174 mMD5031T. DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5031T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

4514v

Abstract: circuit diagram of very long range remote control amp 4546 marking 221 sop8 ic 4514 applications A 4514V A 4514v 8 pin
Contextual Info: CAT.No.TU 173-1 UMD5021T DC-DC Converter Power IC Control IC and Power MOSFET incorporated in SOP8 Package MD5021T is a non-isolated, step down DC to DC converter power IC incorporating a main switch MOSFET and control circuit on a single chip. Using surface mount SOP8

AAT4282A

Abstract: AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1
Contextual Info: AAT4282A Dual Slew Rate Controlled Load Switch General Description Features The AAT4282A SmartSwitch is a member of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed

AN1001

Abstract: IRF1010 IRFB61N15D
Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFB61N15D

Abstract: AN1001 IRF1010
Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD- 94207 IRFB61N15D SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

AN1001

Contextual Info: PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

IRFB61N15DPbF

Abstract: AN1001 irfb61n15
Contextual Info: PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD- 95621 SMPS MOSFET IRFB61N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 150V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

4600 mosfet

Abstract: POWER MOSFET 4600 MOSFET 4600 AAT4600IAS-B1 AAT4600IAS-T1 AAT4600IHS-B1 AAT4600IHS-T1
Contextual Info: AAT4600 1A Current Limited High Side P-Channel Switch Features The AAT4600 SmartSwitchä is part of AATI’s Application Specific Power MOSFETä ASPMä product family. It is a 1A Current Limited Pchannel MOSFET power switch designed for high-side load-switching applications. This switch

Contextual Info: VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS on 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance

IRFM054

Abstract: SHD218501 SHD218501A SHD218501B
Contextual Info: SHD218501 SHD218501A SHD218501B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 303, REV. B Formerly Part Number SHD2181/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.027 Ohm, 45A MOSFET • Isolated Hermetic Metal Package • Fast Switching

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

Contextual Info: AON6290 100V N-Channel MOSFET General Description Product Summary VDS The AON6290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2