POWER TRANSISTOR P55 Search Results

LP559

Contextual Info: TO SHIBA TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION GaA£As IRED & PHOTO IC T L P559 LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP559 consists of a GaA€As high-output light

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 FEATURES * * O_ Suitable for AF drivers and output stages High collector current and Low VCE|sat COMPLEMENTARY TYPE BCP52 PARTMARKING DETAILS - BCP55 BCP55 - 1 0 B C P55- 16

55NF06

Abstract: P55NF06 P55nf*06 Mosfet P55NF06
Contextual Info: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low

transistor c3909

Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

transistor p98

Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC

Contextual Info: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE^i^v,' High DC Current Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > ' < — 9 • General Purpose Inverter U ninterruptible Power Supply

EVM31-050A

Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
Contextual Info: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls

b175 transistor

Abstract: FAF 45 DIODE
Contextual Info: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw •N Uninterruptible Power Supply X - f Servo & Spindle Drive for NC Machine Tools

50BO

Abstract: sje transistor
Contextual Info: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter

CM IWN DC

Abstract: S3050 transistor kda 2DI150M-050
Contextual Info: 2 D I 150M-050 15 oa IW K ’+ jä : Outline Drawings POWER TRANSISTOR MODULE • 4 * A : Features • S h FE High DC Current Gain • High Speed Switching : A pplications • i G e n e r a l • £ • N C lfE ffifctt • ntfiyh Purpose Inverter Uninterruptible Power Supply

photo transistor til 78

Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Contextual Info: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083

6DI30B-050

Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149
Contextual Info: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fc*i ') >? ?*'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners

CD 5151

Abstract: cd 5151 cd CEM9925 715S surface mount transistor A48
Contextual Info: CEM9925 M a rc h 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 5 A , R ds on =45iti Q @ V gs =4.5V. R ds(on)=60iti Q @ V gs =2.5V. Di • Super high dense cell design for extremely low R • High power and current handing capability.

TFM 1380 T

Contextual Info: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?

TRANSISTOR N 1380 600 300 SC

Abstract: M109 S30S3 T151 S-30S transistor 009
Contextual Info: 1 D I 3 O O M - O 5 O 300a • Outline Drawings POWER TRANSISTOR MODULE • t t * '• F e a tu re s • High DC Current Gain ti — Hi gh speed switching Including Free Wheeling Diode .Insulated Type ■ E 3i£ : A p p lic a tio n s • js M h 'T i'i "/?■>?

transistor w4

Abstract: KL9A 2DI50M-120 csr rf
Contextual Info: 2DI50M -120 50A / ' 7 — IW & ’+ jä I Outline Drawings h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE*''Sv.' High DC Current Gain • ~7X ) x) 's W A K F*93R Including Freewheeling Diode • i f e t I n s u l a t e d Type

transistor 009

Abstract: diode B61 transistor bf 760 S535 M109 T810 T930
Contextual Info: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 7*4 "/•?■>?

AFAA TRANSISTOR

Abstract: sew motor 41G1 LB-20G HM 1211 B371
Contextual Info: 2DI3OZ-12O 30a POWER TRANSISTOR MODULE • 4 * * : F e atu res • ¡ftffii/E Hi gh Vol t age • 7 l) ij V • A S O jW S v,' • t ë fâ M * - KrtîK I ncl udi ng Free W h e e lin g D iode E xcelle nt Safe O p e ra tin g Area Insulated Type : Applications

IC M605

Abstract: B409 6DI15A-120 M605 T151 B-411
Contextual Info: 6DI15A-12005A Outline Drawings POWER TRANSISTOR MODULE : Features te . • l'fe-" I: te '••' • 7 1; - * 4 «; H igh V oltage • - K rt* In c lu d in g Free W h e e lin g D iode Insulated Type ■ f f l iÊ • A p p lic a tio n s • AC^ — A C M o to r Controls

transistor f151

Contextual Info: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode

b310 diode

Abstract: DU9 308 1DI75F-120
Contextual Info: 1DI75F-120 75a /< 7 H : Outline D raw ings .- ;u POWER TRANSISTOR MODULE •W Ji • Features ' fiÜSÎŒ H ig h V o lta g e 17 ' J — KF*3i 'A S O ^ '/ a ^ In clu d in g Free W h e e lin g D iode Ex cellent S a fe O p eratin g A rea Insulated Type ■ Æ jiÉ • A p p lic a t io n s

P5506

Abstract: P5506NVG
Contextual Info: P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 55mΩ 4.5A P-Channel -55 80mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

phd55n03

Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25
Contextual Info: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • • PH P55N 03LT, P H B 55N 03LT P H D 55N 03LT QUICK REFERENCE DATA V DSS = 25 V d ’Trench’ technology Very low on-state resistance

P5506HVG

Abstract: P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR
Contextual Info: P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS