POWER TRANSISTOR P55 Search Results

POWER TRANSISTOR P55 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

POWER TRANSISTOR P55 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
55NF06 Abstract: P55NF06 P55nf*06 Mosfet P55NF06 Text: 55NF06 Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET 12 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low	Original	PDF	55NF06 50N06 U55NF06 P55NF06 F55NF06 D55NF06 O-220/TO-220F 55NF06 P55NF06 P55nf*06 Mosfet P55NF06
transistor c3909 Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	PDF	APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
transistor p98 Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57 Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC	Original	PDF	CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
P5506 Abstract: P5506NVG Text: P5506NVG N- & P-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 60 55mΩ 4.5A P-Channel -55 80mΩ -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)	Original	PDF	P5506NVG AUG-17-2004 P5506 P5506NVG
P5506HVG Abstract: P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR Text: P5506HVG Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 Lead-Free PRODUCT SUMMARY V BR DSS RDS(ON) ID 60 55mΩ 4.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS	Original	PDF	P5506HVG AUG-19-2004 P5506HVG P5506 EQUIVALENT* P5506 10 35 SOP DIODE BR 8 TRANSISTOR
LP559 Abstract: No abstract text available Text: TO SHIBA TLP559 TOSHIBA PHOTOCOUPLER DIGITAL LOGIC GROUND ISOLATION GaA£As IRED & PHOTO IC T L P559 LINE RECEIVER MICROPROCESSOR SYSTEM INTERFACES SWITCHING POWER SUPPLY FEEDBACK CONTROL TRANSISTOR INVERTOR The TOSHIBA TLP559 consists of a GaA€As high-output light	OCR Scan	PDF	TLP559 TLP559 2500Vrms LP559
Untitled Abstract: No abstract text available Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 FEATURES * * O_ Suitable for AF drivers and output stages High collector current and Low VCE\|sat COMPLEMENTARY TYPE BCP52 PARTMARKING DETAILS - BCP55 BCP55 - 1 0 B C P55- 16	OCR Scan	PDF	OT223 BCP52 BCP55 BCP55 500mA, BCP55-10 BCP55-16 150mA,
Untitled Abstract: No abstract text available Text: 1DI300MN-050 300A • Outline Drawings , < r p - y POWER TRANSISTOR MODULE : Features • hFE^i^v,' High DC Current Gain • KF*gJSt •% m < n f f i m t • ffliis ■ A pplications • //U fl'f > ' < — 9 • General Purpose Inverter U ninterruptible Power Supply	OCR Scan	PDF	1DI300MN-050 I95t/R89
EVM31-050A Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode Text: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls	OCR Scan	PDF	EVM31-050A( E82988 E9TS5S35^ 19S24 l95t/R89 EVM31-050A ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
b175 transistor Abstract: FAF 45 DIODE Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw •N Uninterruptible Power Supply X - f Servo & Spindle Drive for NC Machine Tools	OCR Scan	PDF	6DI75M-050 I95t/R89) b175 transistor FAF 45 DIODE
50BO Abstract: sje transistor Text: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter	OCR Scan	PDF	i17TL I95t/R89) 50BO sje transistor
CM IWN DC Abstract: S3050 transistor kda 2DI150M-050 Text: 2 D I 150M-050 15 oa IW K ’+ jä : Outline Drawings POWER TRANSISTOR MODULE • 4 * A : Features • S h FE High DC Current Gain • High Speed Switching : A pplications • i G e n e r a l • £ • N C lfE ffifctt • ntfiyh Purpose Inverter Uninterruptible Power Supply	OCR Scan	PDF	150M-050 E82988 I95t/R89 Shl50 CM IWN DC S3050 transistor kda 2DI150M-050
photo transistor til 78 Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098 Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083	OCR Scan	PDF	ECG3040 ECG3041 ECG3042 ECG3043 ECG3044 ECG3045 photo transistor til 78 ecg 3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
6DI30B-050 Abstract: IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149 Text: 6DI3OB-O5CK30A — )v POWER TRANSISTOR MODULE Features •7 1 ) —?fci ') >? ?'{ $•—K l*lSi Including Free Wheeling Diode • hFE^'ra^' High DC Current Gain • Insulated Type Applications • AC -t — 9 —iUiiP AC M otor Controls • 1 7 3 > Air Conditioners	OCR Scan	PDF	E82988 I95t/R89) 6DI30B-050 IC M605 M605 TRANSISTOR MS 173 TE TRANSISTOR 3F t T151 T760 T810 3M1G B149

TFM 1380 T Abstract: No abstract text available Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFEv'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 74 "/•?■>?	OCR Scan	PDF	E82988 1995-9Cl95t/R89) TFM 1380 T
aeir Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor Text: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«	OCR Scan	PDF	1DI75H-120 aeir M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
TRANSISTOR N 1380 600 300 SC Abstract: M109 S30S3 T151 S-30S transistor 009 Text: 1 D I 3 O O M - O 5 O 300a • Outline Drawings POWER TRANSISTOR MODULE • t t * '• F e a tu re s • High DC Current Gain ti — Hi gh speed switching Including Free Wheeling Diode .Insulated Type ■ E 3i£ : A p p lic a tio n s • js M h 'T i'i "/?■>?	OCR Scan	PDF	S30S3% I95t/R89) Shl50 TRANSISTOR N 1380 600 300 SC M109 S30S3 T151 S-30S transistor 009
transistor w4 Abstract: KL9A 2DI50M-120 csr rf Text: 2DI50M -120 50A / ' 7 — IW & ’+ jä I Outline Drawings h 7 POWER TRANSISTOR MODULE Features • • L' High Arm Short Circuit Capability • hFE''Sv.' High DC Current Gain • ~7X ) x) 's W A K F93R Including Freewheeling Diode • i f e t I n s u l a t e d Type	OCR Scan	PDF	2DI50M-120 E82988 OOOOOC30000 transistor w4 KL9A csr rf
transistor 009 Abstract: diode B61 transistor bf 760 S535 M109 T810 T930 Text: 1 D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • F e a tu re s • hFEv'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p lic a t io n s • ’X M .t) 74 "/•?■>?	OCR Scan	PDF	11S19 l95t/R89 transistor 009 diode B61 transistor bf 760 S535 M109 T810 T930
AFAA TRANSISTOR Abstract: sew motor 41G1 LB-20G HM 1211 B371 Text: 2DI3OZ-12O 30a POWER TRANSISTOR MODULE • 4 * * : F e atu res • ¡ftffii/E Hi gh Vol t age • 7 l) ij V • A S O jW S v,' • t ë fâ M * - KrtîK I ncl udi ng Free W h e e lin g D iode E xcelle nt Safe O p e ra tin g Area Insulated Type : Applications	OCR Scan	PDF	2DI3OZ-12O 53QkQ E82988 l95t/R89 AFAA TRANSISTOR sew motor 41G1 LB-20G HM 1211 B371
IC M605 Abstract: B409 6DI15A-120 M605 T151 B-411 Text: 6DI15A-12005A Outline Drawings POWER TRANSISTOR MODULE : Features te . • l'fe-" I: te '••' • 7 1; - * 4 «; H igh V oltage • - K rt* In c lu d in g Free W h e e lin g D iode Insulated Type ■ f f l iÊ • A p p lic a tio n s • AC^ — A C M o to r Controls	OCR Scan	PDF	6DI15A-120 E82988 30it3^ I95t/R89 IC M605 B409 M605 T151 B-411
transistor f151 Abstract: No abstract text available Text: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E \|3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode	OCR Scan	PDF	6DI15A-05005A) E82988 l95t/R89 Shl50 transistor f151
b310 diode Abstract: DU9 308 1DI75F-120 Text: 1DI75F-120 75a /< 7 H : Outline D raw ings .- ;u POWER TRANSISTOR MODULE •W Ji • Features ' fiÜSÎŒ H ig h V o lta g e 17 ' J — KF*3i 'A S O ^ '/ a ^ In clu d in g Free W h e e lin g D iode Ex cellent S a fe O p eratin g A rea Insulated Type ■ Æ jiÉ • A p p lic a t io n s	OCR Scan	PDF	1DI75F-120 b310 diode DU9 308
phd55n03 Abstract: transistor smd xc PHB55N03LT PHD55N03LT SMD footprint design PHP55N03LT SC18 T0220AB TRANSISTOR LD25 Text: Product specification Philips Sem iconductors N-channel TrenchM O S transisto r Logic level FET SYM BOL FEATURES • • • • • PH P55N 03LT, P H B 55N 03LT P H D 55N 03LT QUICK REFERENCE DATA V DSS = 25 V d ’Trench’ technology Very low on-state resistance	OCR Scan	PDF	PHP55N03LT, PHB55N03LT PHD55N03LT 14mil PHP55N03LT T0220AB) phd55n03 transistor smd xc PHD55N03LT SMD footprint design SC18 T0220AB TRANSISTOR LD25

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POWER TRANSISTOR P55 Search Results

POWER TRANSISTOR P55 Result Highlights (5)

POWER TRANSISTOR P55 Datasheets Context Search

55NF06

transistor c3909

transistor p98

P5506

P5506HVG

LP559

Untitled

Untitled

EVM31-050A

b175 transistor

50BO

CM IWN DC

photo transistor til 78

6DI30B-050

TFM 1380 T

aeir

TRANSISTOR N 1380 600 300 SC

transistor w4

transistor 009

AFAA TRANSISTOR

IC M605

transistor f151

b310 diode

phd55n03