PR MARKING CODE SOT89 Search Results

S-90N0442SUA

Abstract: FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF FET marking UC
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0442SUA OD UC T The S-90N0442SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0332SUA

Abstract: 90n03 90N02 13003 TRANSISTOR equivalent FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0332SUA OD UC T The S-90N0332SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0222SUA

Abstract: 90P03 S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0222SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0222SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0332SUA

Abstract: S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF 13003 TRANSISTOR equivalent
Contextual Info: Rev.1.0_01 S-90P0332SUA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0332SUA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0212SMA

Abstract: 90N02 S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF FET MARKING CODE
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0212SMA OD UC T The S-90N0212SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0513SPN

Abstract: 90N02 2 A mos fet FET SOT-89 N-Channel MARKING CODE 51 5 fet sot-89 S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0513SPN OD UC T The S-90N0513SPN is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0232SUA

Abstract: 90N02 FET SOT-89 N-Channel FET MARKING CODE FET SOT-89 fet sot-89 marking code S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0232SUA OD UC T The S-90N0232SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0133SUA

Abstract: FET SOT-89 fet sot-89 marking code FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0133SUA OD UC T The S-90N0133SUA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0312SMA

Abstract: FET MARKING CODE FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0312SMA OD UC T The S-90N0312SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90N0113SMA

Abstract: FET SOT-89 N-Channel S-90N0113SMA-TF S-90N0133SUA-TF S-90N0212SMA-TF S-90N0232SUA-TF S-90N0312SMA-TF S-90N0332SUA-TF S-90N0442SUA-TF
Contextual Info: Rev.3.0_00 N-CHANNEL POWER MOS FET FOR SWITCHING S-90N0113SMA OD UC T The S-90N0113SMA is an N-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

S-90P0112SMA

Abstract: FET MARKING CODE sot-89 MARKING CODE 4A S-90P0112SMA-TF S-90P0222SUA-TF S-90P0332SUA-TF
Contextual Info: Rev.1.0_01 S-90P0112SMA P-CHANNEL POWER MOS FET FOR SWITCHING OD UC T The S-90P0112SMA is an P-channel power MOS FET that realizes a low on-state resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set

high voltage npn transistor SOT-89

Contextual Info: WILLAS FM120-M+ BCX51 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

SOD123 ZL marking

Contextual Info: WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR PNP

Contextual Info: WILLAS FM120-M 2SB766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Prod SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ BC868 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE SOT-89 Package outline TRANSISTOR NPN Features • Batch process design, excellent power dissipation offers

2SC1766

Abstract: transistor marking HB sot-89 MARKING HB SOT-89 P1766
Contextual Info: WILLAS FM120-M+ 2SC1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN • Batch process design, excellent power dissipation offers

SOT89 marking cec

Contextual Info: WILLAS FM120-M+ BC86 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: WILLAS FM120-M+ 2SD874THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SOT-89 TRANSISTOR design, excellent power dissipation offers • Batch process NPN

SOT-89 MARKING Z

Abstract: pr marking code sot89 sot-89 marking code pr
Contextual Info: WILLAS 2SC2881 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-89 FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Pb-Free package is available 1. BASE 2. COLLECTOR RoHS product for packing code suffix ”G” 3. EMITTER

B772 031

Abstract: B772 marking PNP 200V 2A SOT89 PNP TRANSISTOR "SOT89" marking pr H B772 TRANSISTOR b772 06 sot 89 b772 B772+031
Contextual Info: WILLAS FM120-M B772 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produ Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

sot-89 Marking code BQ

Contextual Info: WILLAS FM120-M+ 2SB766A THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

PNP TRANSISTOR "SOT89" marking pr

Abstract: CXT853 sot-89 marking code CXT953 sot-89 marking 22 sot-89 marking code pr TRANSISTOR marking ar code
Contextual Info: RY A IN IM EL PR Central CXT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the

PNP TRANSISTOR "SOT89" marking pr

Abstract: "PNP Transistor" sot-89 marking code pr TRANSISTOR marking ar code sot-89 re diode sot-89 marking code SOT-89 sot-89 marking code CXT853 CXT953
Contextual Info: RY A IN IM EL PR Central CXT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT953 type is a high current, high voltage silicon PNP transistor. Packaged in the SOT-89 surface mount case, the

Contextual Info: WILLAS FM120-M+ 2SB1073 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR