PT 4115 Search Results

Contextual Info: 4 RE LEASED FOR PUBLICATION THIS DRAW IN G IS UNPUBLISHED. CO PYRIGHT 19 1 2 3 ETT5T LOC ,19 REVISIONS BY AMP INCORPORATED.ALL RI GH TS RESERVED. ECN DATE DWN APVO J3& F J0 0- 00 61-97 2/28'97 Y. N K .A IT FJ00-2247-98 DESC RI PT IO N LTR P A D eft tÿ ff i

Contextual Info: 2 THIS DRAW IN G IS UNPUBLISHED. RE LEASED FOR PUBLICATION g j C O P Y R I G H T 19 DI ST ,19 REVISIONS BY AMP INCORPORATED.ALL RIGHTS RESERVED. LTR D B *£IE ECN DATE DUN APVO F J 0 0 - 0 0 6 1 -97 2/26'97 Y. N K. A I2 / 3 ' 9 8 Y .N sL DE SC RI PT IO N

A 933 S transistors

Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s
Contextual Info: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270

pt 4115

Abstract: transistor k 4110 UN4112 UN4113 UN4110 UN4111 UN4114 UN4115 UN4116 UN4117
Contextual Info: Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 3.0±0.2 4.0±0.2 • Features ● ● ● ● ● ● ● ● ● ● ●

pt 4115

Abstract: transistor k 4110 411e UNR4111 UNR4112 UNR4113 UNR4114 UNR4115 UNR4116 UNR4117
Contextual Info: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 2.0±0.2 (0.8)

pt 4115

Abstract: transistor k 4110 4113 4114 D 4110 UNR4111 UNR4112 UNR4113 UNR4114 UNR4115
Contextual Info: Transistors with built-in Resistor UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transistor Unit: mm 3.0±0.2 4.0±0.2

AMD socket s1

Contextual Info: AmPAL*23S8 20-Pin IMOX PAL-Based Sequencer AmPAL*23S8 PRELIMINARY DISTINCTIVE CHARACTERISTICS 14 Registers - 4 Output Logic Macrocells OLMs - 4 Output Registers - 6 Buried State Registers (BSRs) 23 possible array inputs and 8 outputs in a 20-pin package

NAS-938

Abstract: 180-018a NAS bolts torque chart dynamometer AP1001 410403 torque sensor rotary transformer 8311-17-10A hall sensor 6pin
Contextual Info: - Torque Sensors Torque sensors manufactured by PCB fall into two categories of measurement: reaction torque and rotational torque. Both styles utilize strain gages, which are configured into a Wheatstone bridge circuit, as their primary sensing element. Accuracies are typically

m430p

Abstract: pt 4115 EQUIVALENT m430u
Contextual Info: so HARRIS S E M I C O N D U C T O R FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channe Power MOSFETs June 1998 Features Package • 3A, 500V, RDS(on = 2.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma

40664 SCR

Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli­ cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.

PM554

Abstract: LT1066 3004 IC 74HC273 scr c20d PM5101 pc motherboard schematics 432F
Contextual Info: STANDARD PRODUCT PM I PMC-Sierra, Inc. I T# I V h ISSUE 2 PM5543 SARD SONET/SDH 155Mbit/s ADM Reference Desist PM5543 A D M 155 REF SONET/SDH 155 Mbit/s ADD /DRO P MU LT IP LE X OR WITH SINGLE MODE OPTICAL INTERFACE R E F E R E N C E DESIGN SARD I s s ue 2: Jul y, 1 996

PH 41113

Abstract: MYS 99 725 ABB inverter motor fault code MYS 99 003
Contextual Info: ProMinent Product Catalog S e c t i o n Ta b R e f e r e n c e Table of Contents. II SECTION TABS PA G E 1 PA G E 2 7 PA G E 6 7  Solenoid & motor pump overview

M02 amp connector

Contextual Info: 4 3 RE LE AS ED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED, c COPYRIGHT 19 1 2 mr 19 PT5T REVI5I0NS BY AMP INCORPORATED.ALL RIGHTS RESERVED. TTR" RELEASED REVISED 2. 0 D — I— DATE“ APVD OWN F J 0 0 - 0 0 6 1 -97 2/28'97 Y.N S.K F J 0 0 - 1 014- 98

UN4112

Abstract: pt 4115 411D un411F UN4110 UN4111 UN4113 UN4114 UN4119 UNR4111
Contextual Info: Transistors with built-in Resistor UNR411x Series UN411x Series Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and

h9910

Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:

k1917

Abstract: L9726 JESD22-B100 9806 cga 624 Monitor Hyundai Service TSOP 173 g JEDEC-22-A113 K1573 74FST163245
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 1999 TABLE OF CONTENTS Section I: Introduction Section II:

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 15.6±0.5 (0.8)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 15.6±0.5 (0.8)

pt 4115

Abstract: UN4110 UN4111 UN4112 UN4113 UN4114 UNR4110 UNR4111 UNR4112 UNR4113
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si

pt 4115

Abstract: UN4112 un411F UN4110 UN4111 UN4113 UNR4110 UNR4111 UNR4112 UNR4113
Contextual Info: Transistors with built-in Resistor UNR41XX Series UN41XX Series Silicon PNP epitaxial planar transistor Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 For digital circuits 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • Costs can be reduced through downsizing of the equipment and

2SC5169

Abstract: low noise transistor table
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING

4306A

Abstract: magnetron* -coaxial pt 4115 Litton G 58 MAS 20 RCA 1050C 160UL MAGNETRON ku "EAEO" Litton LN-200
Contextual Info: SENT BY: 9- 3-96 ; 1:14PM ;LI1TTQN ELEC'IXKON DLV.-' ['fl LIELECTRON TUB~E DIVISION *. WILI.IAMSPORT, PENN SYLVANIA ?/Ub 2U~ 2ooUaIF J/IZ ~~~~~SPECIFICATION TYPE NO.- wu.SHECT.L.~OL& 5PECI PCATION 17701 REVISON.1. EFF~ECTIVE wt~ PRVISIONS RLSCI~DJllA

K2837

Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II:

h9910

Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS JULY 1999 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 1999 TABLE OF CONTENTS Section I: Introduction Section II: