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    PTF21 Search Results

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    PTF21 Price and Stock

    OMRON Industrial Automation PTF21PC

    RELAY SOCKET 11 POS CHASSIS MT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTF21PC Bulk 68 1
    • 1 $15.19
    • 10 $13.271
    • 100 $11.5927
    • 1000 $10.54714
    • 10000 $10.54714
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    Newark PTF21PC Bulk 11 1
    • 1 $16.71
    • 10 $12.51
    • 100 $10.07
    • 1000 $10.07
    • 10000 $10.07
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    Onlinecomponents.com PTF21PC 156
    • 1 -
    • 10 $15.09
    • 100 $11.01
    • 1000 $9.29
    • 10000 $9.29
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    Master Electronics PTF21PC 156
    • 1 -
    • 10 $15.09
    • 100 $11.01
    • 1000 $9.29
    • 10000 $9.29
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    Infineon Technologies AG PTF210101M-V1

    RF MOSFET LDMOS 28V RFP-10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTF210101M-V1 Reel 500
    • 1 -
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    • 100 -
    • 1000 $10.65194
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    OMRON Corporation PTF21PC

    Relay Socket, DIN Rail, Panel, Screw, 11 Pins, 30 A, 600 VAC - Bulk (Alt: PTF21PC)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTF21PC Bulk 1
    • 1 $8.46362
    • 10 $8.23174
    • 100 $7.5361
    • 1000 $7.5361
    • 10000 $7.5361
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    Mouser Electronics PTF21PC 89
    • 1 $14.72
    • 10 $13.27
    • 100 $10.52
    • 1000 $9.87
    • 10000 $9.87
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    Verical PTF21PC 155 5
    • 1 -
    • 10 $19.617
    • 100 $14.313
    • 1000 $13.676
    • 10000 $13.676
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    Quest Components PTF21PC 2
    • 1 $13.7
    • 10 $13.7
    • 100 $13.7
    • 1000 $13.7
    • 10000 $13.7
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    Neutron USA PTF21PC
    • 1 $74.99
    • 10 $74.99
    • 100 $74.99
    • 1000 $74.99
    • 10000 $74.99
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    Caplugs RP-TF-21-1

    Conduit Fittings & Accessories PLUG FINE THREADED RED PP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RP-TF-21-1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.575
    • 10000 $0.478
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    OMRON Industrial Automation PTF21PC (ALTERNATE: PTF21PC)

    Relay Socket 11 Pin 3 Pole PANEL MJN | Omron Automation PTF21PC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PTF21PC (ALTERNATE: PTF21PC) Bulk 66 5 Weeks 1
    • 1 $15.34
    • 10 $14.57
    • 100 $12.27
    • 1000 $12.27
    • 10000 $12.27
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    Find more PTF21 price and stock on Findchips.com

    PTF21 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF210101M Infineon Technologies 2100 MHz to 2200 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF210101M V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 10W TSSOP-10 Original PDF
    PTF210101MV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10 Original PDF
    PTF21024 Tyco Electronics Miniature Power Relay Original PDF
    PTF210301 Infineon Technologies LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Original PDF
    PTF210301A Infineon Technologies LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Original PDF
    PTF210301E Infineon Technologies LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz Original PDF
    PTF210451 Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Original PDF
    PTF210451E Infineon Technologies 2100 MHz to 2200 MHz; Package: PG:H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF210451E Infineon Technologies LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz Original PDF
    PTF210451E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTF210451EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTF210451F Infineon Technologies 2100 MHz to 2200 MHz; Package: PG: H-31265-2; Flange Type: Earless; Matching: I/O; Frequency Band: 2,010.0 - 2,170.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF210451F V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-31265-2 Original PDF
    PTF210451FV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-31265-2 Original PDF
    PTF210901 Infineon Technologies LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Original PDF
    PTF210901E Infineon Technologies LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz Original PDF
    PTF211301 Infineon Technologies LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz Original PDF
    PTF211301A Infineon Technologies LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz Original PDF
    PTF211802 Infineon Technologies LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Original PDF

    PTF21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 CW 7805 regulator regulator CW 7805 P10ECT-ND CW 7805 1k 7805 datasheet ptf21090 TRANSISTOR CW 7805 resistor* 24k ohm PCC1772CT-ND

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805

    rogers

    Abstract: No abstract text available
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 rogers

    210451

    Abstract: smd marking f2 smd transistor marking l6 BDS31314 PTF210451 PTF210451E
    Text: PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description Features The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210451 PTF210451 210451 smd marking f2 smd transistor marking l6 BDS31314 PTF210451E

    PTF210451E

    Abstract: PTF210451F 200B1
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt 200B1

    PTF210301E

    Abstract: No abstract text available
    Text: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation


    Original     		PDF PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F*

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F 45-watt PTF210451F*

    PTF211301E

    Abstract: No abstract text available
    Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTF211301E PTF211301F 130watt, PTF211301F*

    PTF210301E

    Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301 PTF210301E marking us capacitor pf l1 PTF210301A DD 127 D TRANSISTOR

    CW 7805

    Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
    Text: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802 PTF211802 CW 7805 CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor

    PTF11PC

    Abstract: PTF11QDC PTF21PC
    Text: J SOCKETS FOR USE WITH 10 AMP, NON-FLANGE MOUNT VERSIONS PTF11PC 39.37 (1.55) 38.10 (1.50) 76.20 (3.0) 3.96 (0.156) 8.04 (0.317) 26.16 (1.03) 43.26 (1.70) 9.91 (0.39) PTF21PC 41.61 (1.638) 39.95 (1.573) 79.91 (3.146) 3.96 (0.156) typ. 22.35 (0.880) 8.04


    Original     		PDF PTF11PC PTF21PC PTF11QDC PTF11PC PTF11QDC PTF21PC

    PTF210301A

    Abstract: PTF210301E
    Text: PTF210301A High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz PTF210301A Package 20265 Description The PTF210301A is a 30-watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301A PTF210301A 30-watt, PTF210301E

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Text: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF210101M PTF210101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1

    BDS31314

    Abstract: PTF210451E PTF210451F
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest


    Original     		PDF PTF210451E PTF210451F PTF210451E PTF210451F 45-watt PTF210451F* BDS31314

    702 Z TRANSISTOR smd

    Abstract: 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND
    Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures


    Original     		PDF PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND

    TRANSISTOR CW 7805

    Abstract: CW 7805
    Text: Preliminary PTF211802E LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802E PTF211802 TRANSISTOR CW 7805 CW 7805

    702 Z TRANSISTOR smd

    Abstract: 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702
    Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures


    Original     		PDF PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702

    PTF211301F

    Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd
    Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier


    Original     		PDF PTF211301E PTF211301F PTF211301E PTF211301F 130watt, PTF211301F* BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd

    TRANSISTOR CW 7805

    Abstract: CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND PTF211802E F1814
    Text: PTF211802E Thermally Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTF211802E is a 180-watt, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging provides the coolest operation


    Original     		PDF PTF211802E PTF211802E 180-watt, TRANSISTOR CW 7805 CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND F1814

    CW 7805

    Abstract: CW 7805 regulator BCP56 LM7805 P10ECT-ND PTF211802A regulator CW 7805
    Text: PTF211802A LDMOS RF Power Field Effect Transistor 180 W, 2110 – 2170 MHz Description Features The PTF211802A is a 180-watt, internally-matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802A PTF211802A 180-watt, CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND regulator CW 7805

    CW 7805 regulator

    Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805
    Text: PTF210901 LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz Description Features The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210901 PTF210901 CW 7805 regulator TRANSISTOR CW 7805 regulator CW 7805 cw 7805

    Untitled

    Abstract: No abstract text available
    Text: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz.


    Original     		PDF PTF210451E PTF210451F 45-watt H-30265-2 PTF210451F* H-31265-2

    Untitled

    Abstract: No abstract text available
    Text: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.


    Original     		PDF PTF210301 PTF210301

    cw 7805

    Abstract: CW 7805 regulator TRANSISTOR CW 7805
    Text: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802 PTF211802 cw 7805 CW 7805 regulator TRANSISTOR CW 7805