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    PTFB210801 Price and Stock

    MACOM PTFB210801FA-V1-R0

    RF MOSFET LDMOS 28V H-37265-2
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    MACOM PTFB210801FA-V1-R250

    RF MOSFET LDMOS 28V H-37265-2
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    PTFB210801 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    PTFB210801FAV1
    Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 80W H37265-2 Original PDF 11
    PTFB210801FA-V1-R0
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF 491.28KB
    PTFB210801FAV1R0XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37265-2 Original PDF 493.61KB
    PTFB210801FA-V1-R250
    Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 80W H37265-2 Original PDF 491.28KB
    PTFB210801FAV1R250
    Infineon Technologies RF FETs, Discrete Semiconductor Products, FET RF LDMOS 80W H37265-2 Original PDF 11
    PTFB210801FAV1R250XTMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF LDMOS 80W H37265-2 Original PDF 489.3KB

    PTFB210801 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PTFB210801

    Abstract: NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT
    Contextual Info: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power amplifier applications in the 2110 to 2170 MHz


    Original
    PTFB210801FA PTFB210801FA H-37265-2 PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 tl117 C210 TL127 490-4393-2-ND tl-101-2 800A150GT PDF

    Contextual Info: PTFB210801FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multistandard cellular power ampliier applications in the 2110 to 2170 MHz


    Original
    PTFB210801FA PTFB210801FA H-37265-2 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA PDF