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    PTVA127002EV Price and Stock

    MACOM PTVA127002EV-V1-R0

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA127002EV-V1-R0 Cut Tape 77 1
    • 1 $606.23
    • 10 $512.283
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    PTVA127002EV-V1-R0 Digi-Reel 77 1
    • 1 $606.23
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    PTVA127002EV-V1-R0 Reel 50 50
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    Mouser Electronics PTVA127002EV-V1-R0
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    Richardson RFPD PTVA127002EV-V1-R0 1
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    MACOM PTVA127002EV-V1-R250

    RF MOSFET
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    DigiKey PTVA127002EV-V1-R250 Reel 250
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    Mouser Electronics PTVA127002EV-V1-R250
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    Richardson RFPD PTVA127002EV-V1-R250 1
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    Rochester Electronics LLC PTVA127002EVV1R0XTMA1

    RF MOSFET LDMOS 50V H-36275-4
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    DigiKey PTVA127002EVV1R0XTMA1 Bulk 1
    • 1 $712.11
    • 10 $712.11
    • 100 $712.11
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    Infineon Technologies AG PTVA127002EVV1R0XTMA1

    Trans RF MOSFET N-CH 105V 5-Pin Case 36275 T/R
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    Verical PTVA127002EVV1R0XTMA1 20 1
    • 1 $855.9
    • 10 $855.9
    • 100 $804.55
    • 1000 $727.5125
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    Rochester Electronics PTVA127002EVV1R0XTMA1 20 1
    • 1 $684.72
    • 10 $684.72
    • 100 $643.64
    • 1000 $582.01
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    Infineon Technologies AG LTNPTVA127002EVV1TOBO1

    RF Components (Alt: SP001328062)
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    EBV Elektronik LTNPTVA127002EVV1TOBO1 26 Weeks 1
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    PTVA127002EV Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTVA127002EV-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-36275-4 Original PDF
    PTVA127002EV-V1-R250 Wolfspeed RF MOSFET TRANSISTORS Original PDF
    PTVA127002EVV1R250XTMA1 Infineon Technologies Uncategorized - Miscellaneous - RF MOSFET TRANSISTORS Original PDF
    PTVA127002EVV1XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

    PTVA127002EV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PTVA127002EV Thermally-Enhanced High Power RF LDMOS FETs 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with


    Original
    PDF PTVA127002EV PTVA127002EV H-36275-4 a127002ev

    PTFB090901EA

    Abstract: No abstract text available
    Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original
    PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    PDF