PU321 Search Results

Contextual Info: Power Transistor Arrays PUA3211 PU3211 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3111 (PU3111) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)

PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PU3215, PU4215, PU4515 PU3215, PU4215, PU45T5 Package Dimensions Unit*, mm 4.2max. •H \ P U 3215 Silicon NPN Epitaxial Planar Type 20.5max. Power Amplifier, Switching Complementary Pair with PU3115, PU4115, PU4415 • Features □

Contextual Info: Power Transistor Arrays PU3214, PU4214, PU4514 Silicon NPN Epitaxial Planar Type PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m 4.2max. 20.5max. I-h - n E o Power Amplifier, Switching Complementary Pair with PU3114, PU4114, PU4414 0.8+0.25IF

Contextual Info: PU3112, PU4112, PU4412 Pow er T ra n sisto r A rrays PU3112, PU4112, PU4412 Package Dimensions U n it: m m PU3112 4 .2 m a x . 2 0 .5 m a x . Silicon NPN Epitaxial Planar Type Power Amplifier, Switching Complementary Pair with PU3212, PU4212, PU4512 0.8 + 0 ,

Contextual Info: Power Transistor Arrays PU3113, PU4113, PU4413 PU3113, PU4113, PU4413 Package D im ensions PU3113 U n it: m m Silicon NPN Epitaxial Planar Type 4.2max. 20.5n i Pow er A m plifier, Sw itching C om plem enta ry Pair with PU3213, PU4213, PU4513 0.8 4Û -0 5±0 15

Contextual Info: Power Transistor Arrays PUA3213 PU3213 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUA3113 (PU3113) Unit: mm 9.5±0.2 1.65±0.2 • Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

PU3112

Abstract: PU3212 PU4112 PU4212 PU4412 PU4512 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3212, PU4212, PU4512 PU3212, PU4212, PU4512 Package D im ensions U nitlm m PU3212 4.2max. -t- 20.5max. Silicon NPN Epitaxial Planar Type £ o Pow er A m plifier, S w itching C om plem entary Pair w ith PU3112, PU4112, PU4412 Ui‘¿

PU3211

Abstract: PU3111 PU4111 PU4211 PU4411 PU4511
Contextual Info: Power Transistor Arrays P U 3 2 1 1 , P U 4 2 1 PU3211, PU4211, PU4511 , 1 Package Dim ensions P 1 1 4 5 1 1 Unit! mm PU3211 Silicon NPN Epitaxial Planar Type 4.2max.> 20.5 max. £ o Power Amplifier, Switching Complementary Pair with P U 3.111, PU41 l i , P U 4 4 1 1

PU3111

Abstract: PU3211 PU4111 PU4211 PU4411 PU4511 PU321
Contextual Info: P o w e r T ra n s is to r A rra y s PU3211, PU4211, PU4511 PU3211, PU4211, PU4511 Package Dim ensions PU3211 Silicon N P N Epitaxial Planar Type Power A m plifier, Sw itching C om plem entary Pair w ith PU3111, PU4111, P U 4411 444—0 5 + 0.15 —+ 4 — 1 .0 1 0 2 5

PU421

Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •

PU3112

Abstract: PU3212 PU4112 PU4212 PU4412 PU4512 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3212, PU421 2, PU451 2 PU 3212, PU4212, PU4512 P a c k a g e D im e n s io n s U nitlm m P U 3212 Silicon NPN Epitaxial Planar Type 4. 2m ax . 20 .5m ax . -t- £ o P o w e r A mplifier, Switchin g C o m p l e m e n ta r y Pair with P U 3 1 1 2 , P U 4 1 1 2 , P U 4 4 1 2

Contextual Info: Pow er T ra n sisto r A rrays PU3114, PU4114, PU4414 PU3114, PU4114, PU4414 Silicon NPN Epitaxial Planar Type Package Dimensions PU 3114 U nit Im m I 4.2max. 20 5n Power Amplifier, Switching Complementary Pair with PU3214, PU4214, PU4514 ! E ol ori s 0 8 ± 0.25jj^

PU3119

Abstract: PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3119, PU4119, PU4419 PU3119, PU4119, PU4419 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3119 U n i t ’. m m 4.2max. 20.5max. Power Amplifier, Switching Domplementary Pair with PU3219, PU4219, PU4519 Iflililí If IfIf °-8±0'S

PU4128

Abstract: PU3127 PU4120 PU3211 S2525 PU4118 PU4123 PU3122 PU3123 PU3124
Contextual Info: - 320 - Ta=25‘C.*EdfiTc=251C m PU3122 PU3123 PU3124 PU3127 PÜ3210 PU3211 PU3212 PU3213 PU3214 PU3215 PU3216 PU3219 PÜ3220 PU3226 PU4110 Pü4üi PU4112 PU41I3 PÜ41U PU4116 PIJ4117 PU4118 PU4119 PU4120 PU4121 PU4122 PU4123 PU4124 PU4126 PU412T PU4I28

PU3119

Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3219, PU4219, PU4519 PU3219, PU4219, PU4519 • Package Dimensions Silicon NPN Epitaxial Planar Darlington Type PU3219 Unit: mm Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 ■Features ^fl-0.5 + 0.15 -i-*-1.0±0.25

Contextual Info: Power Transistor Arrays PUA3215 PU3215 Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 20.2±0.3 4.0±0.2 Solder Dip 5.3±0.5 4.4±0.5 M Di ain sc te on na tin nc ue e/ d 9.5±0.2 1.65±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm 8.0±0.2 4.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUA3219 PU3219 Silicon PNP epitaxial planar type darlington For power amplification Complementary to PUA3119 (PU3119) Unit: mm • Features 20.2±0.3 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

PU3110

Abstract: PU3210 PUA3110 PUA3210
Contextual Info: Power Transistor Arrays PUA3210 PU3210 Silicon PNP epitaxial planar type For power amplification Complementary to PUA3110 (PU3110) Unit: mm 20.2±0.3 Solder Dip 5.3±0.5 4.4±0.5 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

PU3113

Abstract: PU3213 PUA3113 PUA3213
Contextual Info: Power Transistor Arrays PUA3213 PU3213 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUA3113 (PU3113) Unit: mm 8.0±0.2 Solder Dip 5.3±0.5 4.4±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

PU3111

Abstract: PU3211 PUA3111 PUA3211
Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating