R T O BH TRANSISTOR Search Results

TIP600

Abstract: 2N6055 2N6056 2N6383 2N6384 2N6385 TIP601 TIP602 TIP605 TIP606
Contextual Info: TEXAS INSTR bH -COPTO DE~| 89 61 72 6 TEXAS INSTR O P T O □ □Bb'ìMb b 62C 36946 TIP600, TIP601, TIP602 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 “7" T-33-29 Designed For Complementary Use With TIP605, TIP606, TIP607

TTL HEX INVERTER

Abstract: p26 ad IG 34 integrated cricuit Tck-25 sot203 2tCK-28 TRANSISTOR LWW 21 TRANSISTOR LWW 43 pcb80c31bh TRANSISTOR LWW 24
Contextual Info: r.-?. ^ D E V E L O P M E N T DATA PCB80C51BH-5 s PCB80C31 BH-5 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. SINGLE-CHIP 8-BIT MICROCONTROLLER 3 0 M H z V E R S IO N DESCRIPTION IC20 In th e fo llo w in g te x t, th e generic te rm "P C B80C51 BH -5” is used to refer to b o th fa m ily members.

transistor tip601

Abstract: TIP601 TIP602 TIP600 2N6055 2N6056 2N6383 2N6384 2N6385 TIP605
Contextual Info: TEXAS INSTR bH -COPTO I> F | 896 1726 TEXAS INSTR O P T O □ □Bb' ìMb D 62C 36946 TIP600, TIP601, TIP602 N-P-N D A R LIN G TO N -C O N N EC TED SILICON POW ER TRANSISTORS REVISED OCTOBER 1 9 8 4 Designed For Complementary Use With TIP605, TIP606, TIP607

K511TB1

Abstract: K500TM133T k176kt1 KM155DA3 K155PE3 K500TM131M K511TB K155A K155Kn7 k589
Contextual Info: M H T E rP A il bH blE MMKPOCXEMbl IN T E G R A T E D M IC R O C IR C U IT S H acT b Part I I klH TETPA Jlb H b lE M M KPOCXEM bl U M O P O Bb lE IN TE G R A T ED D IGITAL M ICRO CIRCU ITS B c n e flC T B M e H e n p e p b iB H o r o c o B e p u u e H C T b o b 3 h h j i

MJE6045

Abstract: SE9302 texas instruments tip102 T0-22Q TIP101 TEXAS INSTRUMENTS TIP105 texas instruments tip100 transistor 1251 n-p-n 2N6388 TIP102
Contextual Info: bH TEXAS I N S T R -COPTO} 0D3bö7D □ 896-1726 TEXAS INSTR OPTO 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JA N U A R Y 1 9 7 7 - R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use with TIP105, TIP106, TIP107

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

free computer hardware repairing notes

Abstract: DC TO 400 HZ INVERTER
Contextual Info: MRP - 4 D EVELO PM ENT DATA PCB80C51BH-4 PCB80C31 BH-4 This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. SINGLE-CHIP 8-BIT MICROCONTROLLER 24 M H z V E R S IO N IC20 INTEGRATED CIRCUITS D ESC R IPTIO N

Contextual Info: nyNPNT^^Pibyis-i-Bh^yyz? CON NPN EPITAXIAL PLANAR TRANSISTOR a ft x m m o VHF P o w e r A m p l i f i e r A p p l i c a t i o n s • P 0 = 1 0 W M i n . ( VCC = 2 0 V , P j = 1 . 0 f f , INDUSTRIAL APPLICATIONS Unit : mm f = 2 7 0MHz ) Recommended fo r H igh G a in C la s s C Pow er

2N3725

Abstract: A13724
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 0DD3b51 S • ALGR T - q i- o l P R O C E S S BH B Process BHB NPN High-Speed Switching Transistor P ro c e ss B H B is a double-diffused epitaxial planar N PN silicon device designed to be used in high­ sp e e d , high-current sw itching applications.

BE555MN

Contextual Info: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :

balun transformer

Abstract: SD5532-21C
Contextual Info: Bai un T r a n s f o r m e r 0 Shape & Dimensions [Unit : mm] H Applications > Ideal for ues in double balanced mixers, and as broad band transformers, transistors and for impedance conversion. H Specifications > Transformer for frequency mixer / balun transformer

Contextual Info: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

FDP7060

Abstract: NDP4060L da2aa CBVK741B019 EO70 MTP2955V TO220 Semiconductor Packaging 9852
Contextual Info: MTP2955V P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

IR 9852

Abstract: 7w66 MTP2955V/SSP35n03
Contextual Info: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

Contextual Info: IRFR9024* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Contextual Info: MTD2955V* P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Mosfet FDD

Abstract: CBVK741B019 F63TNR FDD6680 MTD3055V
Contextual Info: MTD3055V N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

a9hv

Contextual Info: MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

DSAS 13-0

Abstract: d92 02 a9hv
Contextual Info: IRFR9024 P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

BLV99

Contextual Info: PHILIPS INTERNATIONAL b5E ]> WM 711005b 0Gb30ûb 771 M P H I N BLV99 Jl U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use as a driver-stage in base stations in the 90 0 M H z communications band. Features: • emitter-ballasting resistors fo r an optim um temperature profile

multi-emitter transistor

Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Contextual Info: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.

ferroxcube wideband hf choke

Abstract: BLV99 002im3
Contextual Info: N AMER PHI LIP S/DISCRETE bTE D Jl • ^53*131 □ OE'ilfl'i 40Û BLV99 U.H.F. POWER TRANSISTOR N-P-N silicon planar e p ita xia l tra n sisto r p rim a rily intended fo r use as a driver-stage in base stations in the 90 0 M H z co m m u n ica tio n s band.

2N7073

Contextual Info: SILICONIX INC 33E » f i r Si fieo n ix • 0854735 001L.D52 ö ISIX 2N7073 in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-254AA Hermetic Package TOP VIEW o PRODUCT SU M M A RY V BR DSS 'TAr Id (A) 400 0.55 9.0 1 DRAIN 2 SOURCE 3 GATE Case Isolated