R602 Search Results

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

R6025ANZ

Contextual Info: 10V Drive Nch MOSFET R6025ANZ zDimensions Unit : mm 5.5 TO-3PF 15.5 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 0.44 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

Contextual Info: R6020ANX Transistors 10V Drive Nch MOSFET R6020ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: 10V Drive Nch MOSFET R6025ANZ Dimensions Unit : mm 5.5 TO-3PF 15.5 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 0.44 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple.

Contextual Info: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

Contextual Info: R6025ANZ Nch 600V 25A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.15Ω ID ±25A PD 150W TO-3PF l Inner circuit l Features 1) Low on-resistance.

BP107

Abstract: R602 R603 R6032
Contextual Info: 72T4bSl OOOblSB T25 mPRX R602_25/ R603 25 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POülEREX IN C r_Qr Fast Recovery ftQ Q fjffe p

Contextual Info: Silicon Dual Power fRectifier S "F SI r6020 r A^ ¥ B aseplate A=Common Anode X. V Baseplate Common Cathode °-V r I -W -o Baseplate D=Doubler 601 0 0 Dim . Inch es M illim e te r M inim um M axim um M inim um _ A B C D E F G H J .875 .450 -.063 1.197

Contextual Info: R6020420CJYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time3.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition)36 V(FM) Max.(V) Forward Voltage1.8

oeg relay 6vdc

Abstract: E82292 750V
Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev. 3-04 OEG SRUUH series 15 Amp Miniature Power PC Board Relay UL File No. E82292 TUV File No. R60271 Users should thoroughly review the technical data before selecting a product part number. It is recommended that user also seek out the pertinent approvals files of

LP1217

Abstract: dr605 006-BM 027b
Contextual Info: Multilayered Filters SMD MDR series (Multilayered Dielectric Type) Type M DR605C M DR 017B M DR617E M DR 018B M D R 620B M DR 026B M DR 027B M D R 028B M DR 029B M DR601C M DR 001B2 M DR 004B M DR 008B M D R602C M DR 002B M DR 006B M DR 606E M DR 603C M DR 003B

Contextual Info: R6024ENJ Nch 600V 24A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.165W ID 24A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

SH-112D

Abstract: srudh-sh-124d1 relay srudh SRUDH-SH-112D1 SRUDH Series srudh-sh-124dm1 amp circuit diagrams 300w relay 28vdc 240vac SH-112Dm SRUDH-SS
Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev. 4-03 OEG SRUDH series 12 Amp Miniature Power PC Board Relay Appliances, HVAC, Office Machines UL File No. E82292 CSA File No. LR48471 TUV File No. R60271 Users should thoroughly review the technical data before selecting a product part

inductive load relays 48VDC

Abstract: SRUDH-SS E82292 LR48471 TYCO SRUDH
Contextual Info: Catalog 1308961 Issued 6-01 SRUDH series 12 Amp Miniature Power PC Board Relay Appliances, HVAC, Office Machines UL File No. E82292 CSA File No. LR48471 TUV File No. R60271 Coil Data @ 20°C Features • Low cost, small package, 12 Amp switching capcity. • 1 Form A and 1 Form C contact arrangements.

R6020FNJ

Contextual Info: R6020FNJ Nch 600V 20A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.28Ω ID ±20A PD 50W LPT(S) l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: n 72^4b21 DODblSb b70 « P R Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX IN C L.4E D ?R602_35/ R603 35 Fast Recovery n .

R6020ANZ

Abstract: R6020
Contextual Info: R6020ANZ Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 10.0 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1) Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage

Contextual Info: R6020725HSYA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current800 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time1.0u @I(F) (A) (Test Condition)785 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0

Contextual Info: Customer Information Sheet DRAWING N o .: R6003-00 - R6022-00 SHEET 2 OF 2 | IF IN D OUBT - ASK | C O I N0T T0 SCALE I 1 .60 THIRD ANGLE PROJECTION | ALL DIMENSIONS 1 .60 'L'- 03.8 03.8 t 3.80PART No. IN 04.80 'A'- 'L' 'A' R6003-00 3.20 3.80 R6006-00 6.30

Contextual Info: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

R3-32

Abstract: R601094
Contextual Info: R601/R602/R332/WF1608/WF2012SERIES Description The device is a high frequency, wire-wound ferrite SMD chip inductor designed for choking RF signals in the bias circuit（power supply）and for countermeasure against the unnecessary radiation in electronic systems, such as

BP107

Abstract: R602 R603
Contextual Info: fOMBZEX R602 R603 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 25/ 25 Fast Recovery Rectifier 250 Amperes Average 1600 Volts Seal = 2”