RC 4565 SO Search Results

4565d

Abstract: 4565dd 4565d only 8 pin amp op 4565 4565 4565 D DAC-4565DDC DAC-4565J ca 4565 DAC-4565
Contextual Info: PRODUCT SPECIFICATIONS RAYTHEON Complete High Speed 12-Bit Monolithic D/A Converter Features • ■ ■ ■ ■ ■ ■ ■ N o n lin e a rity 1/2 LSB — 0.012% D iffe re n tia l N o n lin e a rity — 0.012% 13 Bits S ettles to 1/2 LSB in 200 nS On C h ip Bandgap V oltage R eference

dioda 1n4007

Abstract: diody i tyrystory dioda Silikon TSE6-1A3113100 schemat 1000ap dioda LED zasilacze TSE6-1A3213100 tyrystory
Contextual Info: TSE - urz¹dzenie do ³agodnego za³¹czania transformatora, jest przekaŸnikiem elektronicznym z mikroprocesorem kontroluj¹cym warunki za³¹czania transformatora. Jako klucze elektroniczne zastosowane s¹ tu tyrystory mocy. £agodny rozruch transformatora bez udarowego pr¹du rozruchowego jest osi¹gniêty dziêki krótkotrwa³emu przemagnesowaniu rdzenia

mosfet rqw 130

Abstract: amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf
Contextual Info: 19- 1252; Rev 0; 7/97 V M / X I Æ Quad/Dual, Low -Voltage, B idirectional RF/Video S w itch es Features ♦ High 500 Off Isolation: -83dB at 10MHz ♦ Low 500 Crosstalk:-87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth ♦ 600 Signal Paths with ±5V Supplies

dioda 1n4007

Abstract: trafo 1a dioda Silikon TSE6-1A1113100 TSE6-1A1213100 TSE6-1A2113100 TSE6-1A2213100 TSE6-1A3113100 TSE6-1A3213100 TSE6-1A4113100
Contextual Info: Urz¹dzenie do ³agodnego za³¹czania transformatorów 71 TSE - urz¹dzenie do ³agodnego za³¹czania transformatora Zalety stosowania TSE - ³agodnego za³¹czania transformatorów TSE jest przekaŸnikiem elektronicznym z mikroprocesorem kontroluj¹cym warunki

TDA 7329

Abstract: TDA 1808 702 Z TRANSISTOR smd TDA 3030 Transistor smd 338 Mitteilung VEB RFT VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN RFT Service Mitteilung Service Mitteilungen robotron
Contextual Info: SERVICE-M ITTEI LUIIG IEN ErW 1 radio - teievfsfon 1~ 6-8 V E I R FT I N D U S T R I E V E R T R I E B RUN D FUN K UND F E R N S E H E N Sei!« F e b . 90 1 -12 Mitteilungen aus dea VEB Fernsehgerätewerk Staffurt, Kundendienst 1. Serie 3000 - F-Leiterplatte

67S4000A

Abstract: 3D-30 A45 so
Contextual Info: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated

4566A

Abstract: do-7 diode iss 4569A CKN6-16/1N/C/003
Contextual Info: ☆ JA N S^ Wicrosemi Corp. f j The <3iode exp en s SCOTTSDALE, A I i 7 m \ 1 N 4 5 6 5 , A, -1 thru 1 N 4 5 8 4 , A, -1 DO-7 F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES • 6.4 V ± 5% ZENER VOLTAGE (NOTE 1] • TEMPERATURE COEFFICIENT RANGE: 0.01 %/°C TO 0.0005%/°C

RC 4565

Abstract: AN7420
Contextual Info: , *7 T*Ü 4Meg x 1 Monolithic DRAM molate MDM14000-80/10/12 Issue 3.0 : March 1992 Mosaic Semiconductor Inc. Pin Definition Package Type: r .V .'G ', 'W.'J' 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP,20 & 24 Pin VIL

Contextual Info: AUe 9* t. 1991 molate 1 M x 1 DRAM MDM11000-80/10/12/15 Issue 3.0 : Junel 991 Semiconductor Inc. r Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features WE Row Access Times of 80,100/120/150 ns 5 Volt Supply ±10% 512 Refresh Cycles 8 ms

Contextual Info: m o l a 1M x 1 Monolithic CMOS DRAM t e Issue 1.1 : February 1992 M DM11001 -T/V/VX/G/J Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Pin Definition Package Type: T .V .'G ' Features Row Access Times of 80/100/120 ns High Density 300mil DIP and 100mil VIL

Contextual Info: 4Meg x 1 M onolithic DRAM molaic MDM14001-80/10/12 Issue 1.1 : April 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 x 1 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns Available in 20 Pin DIP, 20 & 24 Pin VIL

D316251

Abstract: MOSAIC SEMICONDUCTOR pin diagram 7420 DM11001 n 246 cmos 7420 CZ124 MIL883D
Contextual Info: h ' 1M x 1 Monolithic CMOS DRAM molate Issue 1.1 : February 1992 M D M 1 1 0 0 1 -T /V /V X /G /J Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Row Access Times of 80/100/120 ns High Density 300mil DIP and 100mil VIL

1768I

Abstract: EVAL-ADF7020-1-DBX 13109 ADF7020-1 ZA 1411 4803I AN-859 5558 416-1 335 9011I
Contextual Info: AN-859 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com RF Port Impedance Data, Matching, and External Component Selection for the ADF7020-1 by Conor O'Mahony

xtal 11.0592

Abstract: ADF7021-N xtal 11.0592 datasheet EVAL-ADF702XDBZx ADF7021 EVAL-ADF7021-NDBZx 138 4307 407 ZA 1411 EVAL-ADF7021DB 06301
Contextual Info: AN-859 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com RF Port Impedance Data, Matching, and External Component Selection for the ADF7020-1, ADF7021, and ADF7021-N

M39024

Abstract: m39024 jack 6220-215-0 6220-215 M4274-166-9 M4825 tk 19 823 62202 BA 5979 la 4127
Contextual Info: Non-lnsulated Test Jacks ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 • TWX 9102403454 E M C Troduct "N IJ" Series For .025 .64 Dia. Probes For .014(^36) Dia. Probes T l \ G T

MIL-T-55155

Abstract: SE16XC01 Ali 3329 SE12XC01 SE12XC04 SE23XC02 SE25XC02 SE12XC08 SE12XC02 SE16XC03
Contextual Info: advanced INTERCONNECTIONS Nurl-Loc Terminals EMC Product 5 Energy Way, P.O. Box 1342, West Warwick, Ri 02893 * Tel. 401-823-5200 • FAX 401-823-8723 - TWX 9102403454 EMC product Nurl-Loc terminals were developed to overcome problems encountered with ceramic, glass and cold-ilow ther­

Contextual Info: AUG o 6 1991 256K x 4 Monolithic VideoRAM molate MVM4256K/T/V-10/12/15 Issue 3.0: June 1991 Mosaic Sem iconductor 262,144 x 4 CMOS High Speed Video Dynamic RAM Features RAM Access Time of 100,120,150 ns SAM Access Time of 35,40, 50ns 5 Volt Supply ± 5% 512 Refresh Cycles 8 ms

DMS501

Abstract: HX8218C01 YOKOGAWA-3298 HX8218 960x240 water level control block diagram picture BT601 BT656 HX8615A MB-TFT-35-S4-S
Contextual Info: WINCOM TECH Co., Ltd. Product Specification MB-TFT-35-S4-S CUSTOMER CUSTOMER PART NO. APPROVED BY DATE ¨ Approved For Specifications n Approved For Specifications & Sample APPROVED BY CHECKED BY ORGANIZED BY MB-TFT-35-S4-S RECORD OF REVISION Version Contents

Contextual Info: •ac ».3 n PUMA 68F4003 m o l a t e PUMA 68F4003-12/15/20 Issue 1.0 : S eptem ber 1991 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4,194,304 bit CMOS FLASH Memory Module ^P in Definition Features Fast access times of 120/150/200 ns. Utilizes 68 J leaded surface mount FR4 epoxy substrate.

Contextual Info: MOSAIC SEMICONDUCTOR INC 4QE D B1 0 D D 0 S S 6! 2 ^ M O C 7 = 4 6 ,-3 3 PUMA 2 MEMORY MODULE PUMA 2X0039 Issue 3.0 : August 1990 Pin Definition 2,097,152 bit CMOS High Speed UV EPROM & 524,288 bit CMOS High Speed Static RAM Features Block Diagram POWER A 0 -A 1 4

schematic diagram smps 500w

Abstract: how to test computer smps with digital multimeter SIRIO CURRENT TRANSFORMER BLOCK DIAGRAM OF SMPS dsPIC33FJ16GS504 500w half bridge smps 25 volt ZVT full bridge pwm controller 100 ampere sirio DS70320B 500 Watt Phase Shifted ZVT Power Converter
Contextual Info: SMPS AC/DC Reference Design User’s Guide 2008 Microchip Technology Inc. DS70320B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: KC MIXED TECHNOLOGY PUMA moìaic PUMA 2X0212 Issue 1.0 : September 1991 ADVANCE PRODUCT INFORMATION 524,288 bit EEPROM and 524,288 bit SRAM Features Output user configurable as 8 / 16 bit wide. Average Power EEPROM 490 / 913 mW max . SRAM 435 / 803 mW (max).

tl1771

Abstract: Ampire 128 TFT 65K colors 128 x 160 pixels AM-128128RCNTW-00H S-E21 128128 Ampire tft IR transmissive foil DB10 IR gate driver ic chips
Contextual Info: A MP I R E SPECIFICATIONS FOR LCD MODULE CUSTOMER Preliminary Reference Only CUSTOMER PART NO. AMPIRE PART NO. AM-128128RCNTW-00H 1.5”TFT APPROVED BY DATE † Approved For Specifications † Approved For Specifications & Sample APPROVED BY Date : 2005/3/29