REM BB2 Search Results

4074418H

Contextual Info: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two

TX2N1724

Abstract: 2N1724 2N1722 ADE350
Contextual Info: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­

NT R03C

Abstract: 4074418H HD4074408S RBDR wq 0233 tlr2u MARKING 4FL HD4074418F R13C HD404418F
Contextual Info: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two

TIP-52

Abstract: tip51 tip54 TIP52
Contextual Info: TEXAS INSTR -C0PT03- Ô 961726 i. ' t * TEXAS bE IN S T R DE B ô T t i l T B h □□3bfl3D 62C 3 6 8 3 0 O P T O TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - *• R E V IS E D O C T O B E R 1 9 8 4 • 1 0 0 W at 2 5 ° C Case Tem perature

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

BB-2225-X

Contextual Info: I DRWG. NO. ±.015 OUST. DRWG. 196 . T -f^ 'T_' i i I I , i i i 1 L 4— PART NO. A A- 2 2 2 2 AA-2222-X A A -2 2 2 3 AA-2223-X B B- 22 24 BB-2224-X BB-2225 BB-2225-X AWG 22- 18 22- 18 22- 18 22- 18 16- 14 16- 14 16- 14 16- 14 COLOR MWID TAB S I Z E . 176/4.47

TRANSISTOR BDX 286

Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
Contextual Info: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA

CY7C199-25PC

Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
Contextual Info: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable

BB-239-08X

Abstract: I90700 BB-237-06X BB-2I8-38X
Contextual Info: 10 19070 VIATERIAL NO. LOOSE PIECE I90 7 0 0 0 5 4 I90 7 0 0 0 5 7 I90 7 0 0 0 5 9 I9 0 7 0 0 0 6 3 B B -2 I8 -I0 X B B-2 I8 -I4 X B B - 2 I8 - 3 8 X B B - 2 I8 - 5 G X I9 0 7 0 0 0 6 5 I9 0 7 0 0 0 6 7 I9 0 7 0 0 0 6 9 I9 0 7 0 0 0 7 I I90 7 0 0 0 7 3 I90 7 0 0 0 7 5

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - B R O W N « SHC605 1 I DEMO BOARD AVAILABLE See Appendix A • LOW ACQUISITION TIME: 30ns to 0.01% • LOW DROOP RATE: 8mV/|as max T MIN to T max • LOW POWER CONSUMPTION: 335mW • EXTREMELY VERSATILE ARCHITECTURE:

Contextual Info: W g * CYPRESS 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply T he CY7C1399 is a high-perform ance 3.3V CM O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory ex­ pansion is provided by an active LO W chip

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

MCM4132L20

Abstract: pir 325 MCM4116 MCM4132L15 MCM4132L25 MCM4132L30
Contextual Info: - r ? M O TO R O LA MCM4132 3 2 ,7 6 8 x 1 BIT D Y N A M IC R AM MOS T h e M C M 4 1 3 2 is a 3 2 ,7 6 8 -b it h ig h -s p e e d D y n a m ic R a n d o m A c c e s s M e m o ry d e s ig n e d fo r h ig h -p e rfo r m a n c e , lo w - c o s t a p p lic a tio n s in m a in ­

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /IPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.

D1186

Abstract: MB89251 REM BB2
Contextual Info: MB86940 FUJITSU 930 Series Companion Chip DATASHEET FEA TU RES AUGUST 1994 _ • Integrated Interrupt Request Controller, Timer, and Serial D ata Transmitter/Receiver • 930 Series processor interface • 40 MHz operation

mpd416c

Abstract: UPD416 PD416D oq 0051 nec D416 PD416-5 MPD416D
Contextual Info: jjpù4i y piPD416-1 /¿PD416-2 fiPD416-3 ^PD416-5 NEC Electronics U.S.A. Inc. Microcomputer Division 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY DESCRIPTION T h e N E C /uPD41 6 is a 16384 w ords by 1 b it D y n a m ic M O S R A M . It is designed fo r

P3055E

Abstract: motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode
Contextual Info: B EN C H M AR Q _ Using the bq2005 to Control Fast Charge Introduction T his application note describes th e use a n d functions of th e bq2005 con tro llin g a c u rre n t source to fa st ch arg e N iC d o r N iM H b a tte rie s. T h e bq2005 m ay also se rv e a s

B-237-08XT

Abstract: 220-04XT B-237-08X
Contextual Info: 10 \ 9 LOOSE PIEC E F MATERIA L NUMBER I90 7 0 0 0 0 5 ALTERNATE NUMBER AA-220-02X AA-220-04X AA-220-06X A A -2 2 I-06X I90 7 0 0 0 I3 AA-22I-08X I 9 0 7 0 0 0 I 5 A A -2 2 I-IOX I9 0 7 0 0 0 I9 AA -22I-209X I 9 0 7 0 0 0 2 I A A - 2 2 2 - IO X I 9 0 7 0 0 0 2 3 A A - 2 2 2 - I4X

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT JuPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.

a1s smd

Abstract: SMD A1S
Contextual Info: CYM1832 if CYPRESS 64K x 32 Static RAM Module Features F unctional D escription • High-density 2-Mbit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 5.4W max. • SMD technology • TTL-compatible inputs and outputs

HO-12C-14.31818MHZ

Contextual Info: TCD5340C GENERAL TCD5340C is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera NTSC TV system . This device has signal pixels o f 1163 (horizontal) x 492 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.

ISD 1720

Abstract: CYM1720
Contextual Info: CYM1720 p / CYPRESS Features • High-density 768-kilobit SRAM module • High-speed CMOS SRAMs — Access time of 15 ns • 56-pin, 0.5-inch-high ZIP package • Low active power — 1.8W max. for t\A = 25 ns • SMD technology • TTL-compatible inputs and outputs

737R

Abstract: ilpi 127 P243I i1017 IDT71589 IDT71B74 IDT74FCT16373 pin diagram intel i3 processor 7mb6091sxxk IDT7MB6091
Contextual Info: PRELIMINARY IDT7MB6091 128KB SECONDARY CACHE MODULE FOR THE INTEL i486™ Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • Pin com patible w ith ttie Intel 485Turbocache™ 82485M B The IDT7M B6091 is a pin com patible re placem ent fo r the