RF TRANSISTOR SOT23 5 Search Results

BFT25

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

BFR91 philips

Contextual Info: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The

Contextual Info: • 1^53=131 QDESSSti 283 H A P X Philips Semiconductors Product specification ANER PHILIPS /DISC RE TE b?E NPN 1 GHz wideband transistor DESCRIPTION BFS17 e PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

FMMTH10

Abstract: DSA003704
Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 – NOVEMBER 1995 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz TYPICAL CHARACTERISTICS 200 1.0 V+-=-10V -55°C 50 -55°C - Volts 100°C 0.6 PARTMARKING DETAIL – 0.4

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

BCW66

Abstract: BFS17P E6327 marking code MCs
Contextual Info: BFS17P NPN Silicon RF Transistor 3 • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 1 Type Marking BFS17P MCs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage

transistor j210

Abstract: 212 t sot-23
Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHRT5993GP SURFACE MOUNT NPN Silicon RF Transistor VOLTAGE 11 Volts CURRENT 50 mAmpere APPLICATION * UHF Converter * Local Oscillator SOT-23 .019 0.50 MARKING .066 (1.70) * NPN RF Transistor .110 (2.80) .082 (2.10) .119 (3.04)

AN9420

Abstract: TRANSISTOR an9663 HFA1155 HFA1155IH96 TB379
Contextual Info: HFA1155 Data Sheet September 2004 380MHz, SOT-23, Low Power Current Feedback Operational Amplifier Features • Low Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5.5mA The HFA1155 is a low power, high-speed op amp and is the most recent addition to Intersil’s HFA1XX5 series of low

Contextual Info: CMOS, Low Voltage RF/Video, SPST Switch ADG751 a FEATURES High Off Isolation –75 dB at 100 MHz –3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply Low On-Resistance 15 ⍀ Fast Switching Times tON Typically 9 ns tOFF Typically 3 ns Typical Power Consumption <0.01 ␮W

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Transistor 2N3866

Abstract: ZTX321 ZTX323 AVALANCHE TRANSISTOR ZTX327 ZTX415 2N2708 2N3866 Scans-00107843 ZTX320
Contextual Info: TABLE 14: NPN HIGH FREQUENCY The devices shown in this table are designed for high frequency operation in such application areas as amplification, switching and oscillation. ZTX 3 2 0 ZTX321 ZTX 322 ZTX 323 ZTX 325 mA 30 15 15 15 15 15 400 1.0 500 0.4 500 0.4

MARKING W2 SOT23 TRANSISTOR

Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
Contextual Info: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23

MAX44521

Abstract: adov sot 23 ad sot-23-8l OP BASEBAND 80MHZ AAAB OP max4452
Contextual Info: 19-1824; Rev 1; 1/05 Low-Cost, +3V/+5V, 620µA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs The MAX4452/MAX4352 single, MAX4453/MAX4353 dual, and MAX4454/MAX4354 quad amplifiers combine high-speed performance with ultra-low power consumption. The MAX4452/MAX4453/MAX4454 are unitygain stable and achieve a -3dB bandwidth of 200MHz,

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

EL5162

Abstract: EL5163 EL5164 EL5167 EL5262 EL5263 EL5362 FN7388 F 5 Ld SOT-23 MDP0038
Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet March 16, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

FN7388

Abstract: EL5163IWZ-T7A EL5362IUZ-T7 so8 150 MIL EL5162 EL5163 EL5164 EL5167 EL5262 EL5263
Contextual Info: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: 19-2164; Rev 0; 10/01 High-Output-Drive, 10MHz, 10V/µs, Rail-to-Rail I/O Op Amps with Shutdown in SC70 The MAX4230 comes in a tiny 5-pin SC70 package and the MAX4231, single with shutdown, is offered in the 6-pin SC70 package. The dual op amp MAX4233 is offered in the space-saving 10-bump UCSP , providing the smallest footprint area for a dual op amp with

LM3578 equivalent

Abstract: lm2577 with external transistor 12V Fixed-Voltage Lm317 LM333 equivalent lm2577 boost buck LM317 sot-23 LM317 voltage regulator SHUNT REGULATOR LM317 LM2576 DC-DC CONVERTER 12V D00A
Contextual Info: LM3411 Precision Secondary Regulator/Driver General Description The LM3411 is a low power fixed-voltage 3.3V or 5.0V precision shunt regulator designed specifically for driving an optoisolator to provide feedback isolation in a switching regulator. The LM3411 circuitry includes an internally compensated op

Contextual Info: 19-1178; Rev 3; 10/03 L MANUA ION KIT T A U L EVA BLE AVAILA Miniature, 300MHz, Single-Supply, Rail-to-Rail Op Amps with Enable Features ♦ High Speed: 300MHz -3dB Bandwidth MAX4212/MAX4213 200MHz -3dB Bandwidth (MAX4216/MAX4218/MAX4220) 50MHz 0.1dB Gain Flatness

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is