Untitled
Abstract: No abstract text available
Text: RF301B2S Diodes Fast recovery diode RF301B2S 6.5±0.2 5.1±0.2 0.1 6.0 6.0 2.3±0.2 0.1 1.6 9.5±0.6 1.5 0.75 zStructure 0.9 （2） （1） zConstruction Silicon epitaxial planar （3） 0.65±0.1 2.3 2.3 CPD 2.5 ① 1.6 3.0 2.0 0.5±0.1
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RF301B2S
SC-63
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RF301B2S
Abstract: No abstract text available
Text: RF301B2S Diodes Fast recovery diode RF301B2S zApplications General rectification z Land size figure Unit : mm z Dimensions (Unit : mm) 㪍㪅㪇 㪉㪅㪊㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪍㪅㪌㫧㪇㪅㪉 䋨㪉䋩 䋨㪊䋩 㪇㪅㪎㪌 㪇㪅㪍㪌㫧㪇㪅㪈
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RF301B2S
RF301B2S
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DRF301B2S
Abstract: RF301B2S
Text: SPICE PARAMETER RF301B2S by ROHM FAE Div. * RF301B2S D model * Date: 2008/07/28 .MODEL RF301B2S D + IS=62.820E-12 + N=1.0915 + RS=18.739E-3 + IKF=31.776E-3 + EG=1 + CJO=91.737E-12 + M=.41721 + VJ=.53716 + ISR=500.15E-12 + NR=2.5000 + BV=200 + TT=31.939E-9
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RF301B2S
DRF301B2S
820E-12
739E-3
776E-3
737E-12
15E-12
939E-9
RF301B2S
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DC1002
Abstract: No abstract text available
Text: RF301B2S Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss
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RF301B2S
SC-63
200pF
100pF
R1120A
DC1002
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YA ROHM
Abstract: RF301B2S
Text: Fast Recovery Diode RF301B2S zApplications General rectification zDimentions Unit : mm zLand size figure(Unit : mm) 6.0 6.0 1.6 1.6 3)Very fast recovery 4)Low switching loss CPD 3.0 2.0 zFeatures 1)Power mold type(CPD) 2)Ultra Low VF
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RF301B2S
SC-63
R0039A
YA ROHM
RF301B2S
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fast recovery diode
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss
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RF301B2S
SC-63
200pF
100pF
R1120A
fast recovery diode
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RF301B2S
Abstract: No abstract text available
Text: RF301B2S Diodes Fast recovery diode RF301B2S 6.5±0.2 5.1±0.2 0.1 6.0 6.0 2.3±0.2 0.1 1.6 9.5±0.6 1.5 0.75 zStructure 0.9 （2） （1） zConstruction Silicon epitaxial planar （3） 0.65±0.1 2.3 2.3 CPD 2.5 ① 1.6 3.0 2.0 0.5±0.1
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PDF
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RF301B2S
SC-63
RF301B2S
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RF301B2S
Abstract: No abstract text available
Text: RF301B2S Diodes Fast recovery diode RF301B2S zApplications General rectification z Land size figure Unit : mm z Dimensions (Unit : mm) 6.0 2.3±0.2 0.1 6.5±0.2 （2） （3） 0.75 0.65±0.1 2.3 2.3 CPD 0.5±0.1 2.3±0.2 2.3±0.2 zConstruction
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RF301B2S
SC-63
RF301B2S
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Untitled
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss
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RF301B2S
SC-63
200pF
100pF
R1120A
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RF2001
Abstract: 1SR154 1SR154 400V download diode rectifier RF2001T3D RR274EA-400 10a ultra fast diode 1SR154-400 RR274EA diode 1SR154-400
Text: 2009 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one
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R0039A
52P6148E
RF2001
1SR154
1SR154 400V
download diode rectifier
RF2001T3D
RR274EA-400
10a ultra fast diode
1SR154-400
RR274EA
diode 1SR154-400
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rf1501
Abstract: RFU20TM5 RFUS20 RF2001 RF1501TF3S RF1501NS3S rfu20 RFU20TM5S RF05VA2S 1SR154
Text: 2010 Product Catalog Discrete Semiconductors Fast Recovery Diodes Rectifier Diodes Fast Recovery Diodes ROHM’s RF series utilizes a unique process for the highest recovery characteristics in the industry. The novel design, which emphasizes low loss and high reliability, has been well received in the market, resulting in the number one
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R0039A
52P6217E
rf1501
RFU20TM5
RFUS20
RF2001
RF1501TF3S
RF1501NS3S
rfu20
RFU20TM5S
RF05VA2S
1SR154
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TO-220FN
Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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O-220FN,
O-220FN
Fa301B2S
RF501B2S
RF601B2D
RF601T2D
RF1001T2D
RF1601T2D
RF2001T2D
TO-220FN
RF diodes
TO220FN
10na
common anode fast
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RF071M2S
Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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O-220FN,
O-220FN
RF071M2S
RF1001T2D
RF101L2S
RF1601T2D
RF2001T2D
RF301B2S
RF501B2S
RF601B2D
RF601T2D
TO-220FN
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