TLP741J
Abstract: E67349 VDE0884 pps power
Text: TLP741J TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP
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TLP741J
TLP741J
UL1577,
E67349
EN60065:
EN60950:
11-7B1
VDE0884
E67349
pps power
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tlp741j
Abstract: No abstract text available
Text: TLP741J TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741J consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP
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TLP741J
TLP741J
UL1577,
E67349
EN60065:
EN60950:
VDE0884
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MOTOROLA mcr8dsn
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCR8DSM/D SEMICONDUCTOR TECHNICAL DATA MCR8DSM MCR8DSN Silicon Controlled Rectifiers Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
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MCR12DSM
Abstract: motorola thyristor MCR12DSN MCR12DSNT4
Text: MOTOROLA Order this document by MCR12DSM/D SEMICONDUCTOR TECHNICAL DATA MCR12DSM MCR12DSN Silicon Controlled Rectifiers Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
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MCR12DSM/D
MCR12DSM
MCR12DSN
MCR12DSM
motorola thyristor
MCR12DSN
MCR12DSNT4
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TLP741G
Abstract: E67349 VDE0884 EN60065
Text: TLP741G TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP741G Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP
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TLP741G
TLP741G
150mA
UL1577,
E67349
EN60065:
EN60950:
4000Vrms
VDE0884/08,
E67349
VDE0884
EN60065
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TLP741G
Abstract: No abstract text available
Text: TLP741G TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP741G Office Machine Household Use Equipment Solid State Relay Switching Power Supply Unit in mm The TOSHIBA TLP741G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP
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TLP741G
TLP741G
150mA
UL1577,
E67349
EN60065:
EN60950:
4000Vrms
VDE0884/08,
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triac 600V 100A
Abstract: TF361M TFD312M triac 1500v 2000V 100A TRIAC Triac 3a 600v thyristor 2402 841-S TRIAC 10A 600V TO-220 tm861s
Text: Bulletin No. D03EC0 Apr., 2000 THYRISTORS & TRIACS CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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D03EC0
Sanken55
H1-D03EC0-0004015TA
triac 600V 100A
TF361M
TFD312M
triac 1500v
2000V 100A TRIAC
Triac 3a 600v
thyristor 2402
841-S
TRIAC 10A 600V TO-220
tm861s
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thyristor sot-89
Abstract: CR05AS CR05A
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 ➂ 2.5±0.1 ➁ 3.9±0.3 0.8 MIN ➀ 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1
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CR05AS
00V/400V
OT-89
thyristor sot-89
CR05AS
CR05A
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solid state flasher circuit 5A current
Abstract: CR05AS
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 2.5±0.1 2 3.9±0.3 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1
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CR05AS
00V/400V
OT-89
solid state flasher circuit 5A current
CR05AS
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CR02AM
Abstract: CR02AM-8A
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE OUTLINE DRAWING CR02AM-8A Dimensions in mm φ5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE
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CR02AM-8A
reve00
CR02AM
CR02AM-8A
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rgk 20/2
Abstract: TF320M TFD312M TF361M triac 600v. 1a. to 92 1661P triac 600V 100A TF320M-A MS-611A TFD312S-F
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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H1-D03ED0-0110010TA
rgk 20/2
TF320M
TFD312M
TF361M
triac 600v. 1a. to 92
1661P
triac 600V 100A
TF320M-A
MS-611A
TFD312S-F
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CR02AM
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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and00
CR02AM
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CR02AM
Abstract: SOLID STATE RELAY
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING CR02AM Dimensions in mm φ5.0 MAX VOLTAGE CLASS TYPE NAME 2 1 12.5 MIN 3 5.0 MAX 4.4 1 CATHODE 2 ANODE 3 GATE CIRCUMSCRIBE CIRCLE φ0.7 3.9 MAX 1.3 1.25 1.25
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CR02AM
00V/300V/400V
application00
CR02AM
SOLID STATE RELAY
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CR02AM
Abstract: cr02am equivalent
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING CR02AM Dimensions in mm φ5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7
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CR02AM
00V/300V/400V
CR02AM
cr02am equivalent
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cr2am
Abstract: igniter
Text: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR2AM LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR2AM OUTLINE DRAWING Dimensions in mm 10 MAX 0.5 3.2±0.2 23.7±0.5 4 ∗ 8 MAX φ3.2±0.1 TYPE NAME @ VOLTAGE CLASS 4 MAX 12 MIN 1.2±0.1 0.8 0.8 4.5 MAX
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00V/600V
O-202
cr2am
igniter
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CR05AS
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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CR05AS-8
Abstract: CR05AS-8-ET14
Text: CR05AS-8 Thyristor Low Power Use REJ03G0543-0100 Rev.1.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 4 3 1. 2. 3. 4. Cathode
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CR05AS-8
REJ03G0543-0100
PLZZ0004CA-A
Unit2607
CR05AS-8
CR05AS-8-ET14
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CR02AM
Abstract: cr02am-8 equivalent CR02AM-8 CR02AM-8-TB CR02AM-8A cr02am equivalent electric blanket CR02AM-8-A6 PRSS0003EA-A SC-43A
Text: CR02AM-8 Thyristor Low Power Use REJ03G0351-0200 Rev.2.00 Mar.01.05 Features • IT AV : 0.3 A • VDRM : 400 V • IGT : 100 µA • Planar Passivation Type Outline PRSS0003EA-A (Package name: TO-92) 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications
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CR02AM-8
REJ03G0351-0200
PRSS0003EA-A
VDRM-900
Unit2607
CR02AM
cr02am-8 equivalent
CR02AM-8
CR02AM-8-TB
CR02AM-8A
cr02am equivalent
electric blanket
CR02AM-8-A6
PRSS0003EA-A
SC-43A
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Untitled
Abstract: No abstract text available
Text: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications
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CR05AS-8
REJ03G0348-0100
OT-89
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thyristor sot-89
Abstract: CR05AS-8
Text: CR05AS-8 Thyristor Low Power Use REJ03G0348-0200 Rev.2.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CB-A (Package name: SOT-89) 2, 4 4 1 2 3 3 1. 2. 3. 4.
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CR05AS-8
REJ03G0348-0200
PLZZ0004CB-A
OT-89)
Unit2607
thyristor sot-89
CR05AS-8
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rgk 20
Abstract: rgk 20/1 rgk 66 rgk 30 rgk 20/2 Scans-048 RGK20 DSAGER00039
Text: Vergleichstabelle verschiedener Relaistypen und -arten Typ Erregerspannung [V] Leistungsaufnahme [W] maximale Schaltspannung [V] Schutzgaskontaktrelais 11GK 20 UGK 30 RGK 66 4; 6; 12; 18; 24 «0,18* «0,35* 2; 4; 6; 18 . 24 «0,25* «0,35* 12; 48; 60 110 150 ~
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Untitled
Abstract: No abstract text available
Text: POSflRONIC INDUSTRIES BELEVES THE DATA ON TH 6 DM W M 6 TO K RELIABLE, SM C E THE TECHNICAL INFORMATON IS GIVEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H IS OWN D6CREIW N AND RGK. POSITROMC M D U SIR ES ASSUMES NO R E SP O N SIB L E FOR RESULTS OBTAINED OR DAMAGES
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SX4873
1000D
SK4873
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Untitled
Abstract: No abstract text available
Text: p o s t r o m c m d u s t r ie s b e l e v e s t h e d a ta o n t h b DftMVMG TO BE RELIABLE. SM CE THE TECH M M L INFORMATION B GIVEN FREE O F CHARGE, THE USER EMPLOYS SUCH INFORMATION AT H E OWN 06CRED0N AND RGK. POSffROMC M DUSTRES ASSUM ES NO R E SP O N SIB L E FOR RESULTS OBTAINED OR DAMAGES
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06CRED0N
SK5577
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65640
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-THYRISTOR TLP741J Unit in mm OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
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TLP741J
TLP741J
150mA
UL1577,
E67349
BS415
BS7002
EN60950)
4000Vrms
VDE0884/08
65640
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