RH40P Search Results
RH40P Price and Stock
STMicroelectronics STRH40P10HYG- Bulk (Alt: STRH40P10HYG) |
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STRH40P10HYG | Bulk | 111 Weeks | 10 |
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STMicroelectronics STRH40P10HY1- Bulk (Alt: STRH40P10HY1) |
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STRH40P10HY1 | Bulk | 111 Weeks | 10 |
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STMicroelectronics STRH40P10HYT- Bulk (Alt: STRH40P10HYT) |
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STRH40P10HYT | Bulk | 111 Weeks | 10 |
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STRH40P10HYT | 17 Weeks | 1 |
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RH40P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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rg26P
Abstract: AIC811-29GV AIC811-29GU4 AIC811-26GV AIC811-26GU4 aic 2857 AIC811-27 RG29G BQ29G AIC811-27PV
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AIC811/AIC812 AIC811/AIC812 AIC811) AIC812) 140ms rg26P AIC811-29GV AIC811-29GU4 AIC811-26GV AIC811-26GU4 aic 2857 AIC811-27 RG29G BQ29G AIC811-27PV | |
RH40PContextual Info: RH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization |
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STRH40P10FSY3 O-254AA O-254AA STRH40P10 RH40P | |
Contextual Info: RH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS RH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■ |
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STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA | |
Contextual Info: RH40P10FSY1 RH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS RH40P10FSY1 100 V RH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA |
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STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA | |
Contextual Info: AIC811/AIC812 Reset Circuits with Manual Reset Input FEATURES DESCRIPTION Ultra Low Supply Current 1µA typ. AIC811/AIC812 are low-power microprocessor (µP) Guaranteed Reset Valid to Vcc=0.9V supervisory circuits used to monitor power supplies in Available in two Output Types: Push-Pull Active |
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AIC811/AIC812 AIC811/AIC812 AIC811) AIC812) 140ms | |
Contextual Info: RH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge |
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STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA | |
STRH40P10FSY3Contextual Info: RH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS RH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA |
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STRH40P10FSY3 O-254AA 100kRad 34Mev/cm STRH40P10FSY3 | |
STRH40P10FSY3
Abstract: JESD97 STRH40P10FSY1
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STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1 |