pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-Feb.
SC-75A
OT-416
50P5876E
pioneer mosfet audio amp ic
12V ENERGY LIGHT CIRCUIT DIAGRAM
vmn3 package
DTC143T datasheet
TRANSISTOR SMD catalog
Equivalent transistors for UMD2N
smd ya transistor
2SD2211
2SA1576UB
2SC6114
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2SD1664
Abstract: 3933
Text: SPICE PARAMETER 2SD1664 by ROHM TR Div. * Q2SD1664 NPN BJT model * Date: 2006/11/15 .MODEL Q2SD1664 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1
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2SD1664
Q2SD1664
625E-15
30E-15
28E-12
576E-12
55E-12
801E-9
2SD1664
3933
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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R0039A
51P6029E
2SA1576UB
2SC1740s equivalent
transistor digital 47k 22k PNP NPN
2sd198
2SC6114
2sc401
2SB1240
2SB1694
2SC5865
2sD2703
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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R0039A
52P6215E
2SC6144
IMD16A
potential divider
2SA1576UB
DTD513Z
MP6T3
2SCR514
2SA1514K equivalent
2SCR543
2SC6114
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2SD1858
Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗
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2SD1664
2SD1858
2SD1664
65Max.
SC-62
500mA
2SB1132
2SB1237
R0039A
2SD1858
2SB1237
T100
rohm 2sd1664
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗
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2SD1664
2SD1858
2SD1664
65Max.
SC-62
500mA
R1102A
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Untitled
Abstract: No abstract text available
Text: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)
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-500mA
-50mA)
2SD1664-die
2SB1132-die
R1010A
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MP6X1
Abstract: No abstract text available
Text: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. (6) (5) (4) (1)
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500mA
2SD1664-dies
MP6X1
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Untitled
Abstract: No abstract text available
Text: MP6X1 Transistors Medium Power Transistor 32V, 1A MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. zStructure NPN silicon epitaxial planar transistor
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500mA
2SD1664-dies
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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Untitled
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
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MP6Z1
Abstract: No abstract text available
Text: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.
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-500mA
-50mA)
2SD1664-die
2SB1132-die
MP6Z1
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2SD1858
Abstract: 2SB1132 2SB1237 2SD1664
Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1664
2SD1858
500mA
2SB1132
2SB1237.
96-207-D12)
2SD1858
2SB1237
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Untitled
Abstract: No abstract text available
Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type
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2SB1132
2SA1515S
2SB1237
500mA
2SD1664
2SD1858.
96-120-B12)
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rohm 2sd1664
Abstract: No abstract text available
Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +
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2SB1132
2SA1515S
2SB1237
2SB1132
2SA1515S
65Max.
SC-72
R1102A
rohm 2sd1664
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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2SB1237
Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +
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2SB1132
2SA1515S
2SB1237
2SB1132
2SA1515S
65Max.
SC-72
SC-62
R0039A
2SB1237
2SD1664
2SD1858
SC-72
T100
2SB1132-QR
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SD1758 equivalent
Abstract: SOT-89 F inverter mpt 2SD1760 equivalent IMH3 N 2SB1181F5 equivalent
Text: ~äi ROHM CORP DE | 7 0 2 0 1 ^ □□□1155 □ | wm • IMD Isolated Mini Mold Device Type (New Products^ (6-pin Type with 2 Independent Built-in Circuits) k - ' .F— - . ; ; - • . '••Tvnp • ' ' -f-'' . ' ' y P e : . ■ . IMB1 Inverter Driver
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DTA124EKX2
DTA144EKX2
DTA143TKX2
DTA114TKX2
DTA144
DTA14po
2SB1181
2SB1182
2SB1184
2SD1758 equivalent
SOT-89 F
inverter mpt
2SD1760 equivalent
IMH3 N
2SB1181F5 equivalent
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2SC3082K
Abstract: BCX53 Rohm RF Transistors sot-23 RXT-A76 2SA1037KLN 2SA1455K 2SC2059K 2SC2412KLN 1100 SOT-89 2SC3802K
Text: ROHM CORP ‘ •fi * Other Popular JapSnGSS SOT-23 Types t - F u n ctio n Type - D E |7fl2flT= H QD01D7fl 7 7 ~ - 2 .? -< ? / _ V c E O ÌV : ' Jtìim A ) - *N e w P rodu cts P c im W ) C o b p F ) . . . F ife o U n der D evelopm ent
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QG01G7Ã
OT-23
2SC3082K
2SC3802K
2SC3837K
2SC3838K
BCX53 Rohm
RF Transistors sot-23
RXT-A76
2SA1037KLN
2SA1455K
2SC2059K
2SC2412KLN
1100 SOT-89
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RT1N241M
Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Text: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F
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2SD1623
2SC2873
2SC3458
N221F
RT1N432C
DTC143XK
UN4216
RT1N432S
DTC143XS
RN1401
RT1N241M
2sc3246
2SC4159
4392
DTC143ES
2SC3296
2sc3374
DTC114EU
2sc4368
DTC144EU
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Transistor 2SD1858
Abstract: No abstract text available
Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 •F e a tu re s 1) (Ic / I b 2) • E x te r n a l dim ensions (Units: mm) Low VcE(sat) = 0.15V (typical). 2SD1664 2SD1858 = 5 0 0 m A /5 0 m A ) 6 .8 ± 0 2 C om plem ents the e+ 0 .2 5-0.1
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2SD1664
2SD1858
2SD1664
SC-62
Ta--25
2SD1664)
2SD1858)
Transistor 2SD1858
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