RSLC Search Results

RSLC

Contextual Info: VP16322 E1 PERFORMANCE MONITOR 1 OF 2 PERFORMANCE MONITOR CIRCUrTS LOS PCLK FP MFP PCM RSLC RECEIVE DATA SLICER CDRC CLOCK AND DATA RECOVERY RED REM AIS PDVD PULSE DENSITY MONITOR PRSM PSEUDO RANDOM SEQUENCE MONITOR DLEX RBOC RFDL DATA BrT-ORIENTED HDLC LINK

boost convertor 12v to 24v 2A

Abstract: MIC3232
Contextual Info: MIC3230/1/2 Constant Current Boost Controller for Driving High Power LEDs General Description The MIC3230/1/2 are constant current boost switching controllers specifically designed to power one or more strings of high power LEDs. The MIC3230/1/2 have an input voltage range from 6V to 45V and are ideal for a

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

sdc 500 pwm control

Contextual Info: DRV8809 DRV8810 SLVS854B – JULY 2008 – REVISED JUNE 2011 www.ti.com COMBINATION MOTOR DRIVERS WITH DC-DC CONVERTERS Check for Samples: DRV8809, DRV8810 FEATURES • 1 • 2 Configurable to Eight Modes of Combination Motor Driver – Bipolar Stepper Motor Driver

44-PIN

Abstract: DS2151Q DS2151QN DS2153Q TTR62411 1S191 SLC-96 Mode Defined
Contextual Info: DS2151Q DS 2151Q D A L L A S s e m ic o n d u c to r FEATURES T 1 Single—Chip Transceiver PIN ASSIG NM ENT • C om plete D S 1/IS D N -P R I transceiver functionality Functional Blocks nnnnnnnnnnn • Line interface can handle both long and short haul trunks

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

DS33R41

Abstract: DS21455 DS21458 DS2155 DS33Z41
Contextual Info: DS33R41 Inverse-Multiplexing Ethernet Mapper with Quad Integrated T1/E1/J1 Transceivers www.maxim-ic.com GENERAL DESCRIPTION FEATURES 10/100 IEEE 802.3 Ethernet MAC MII and RMII Half/Full Duplex with Automatic Flow Control The DS33R41 extends a 10/100 Ethernet LAN

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

75631P

Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE

ITF86182SK8T

Abstract: MS-012AA TB370
Contextual Info: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V

7n10l

Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes

76639p

Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Contextual Info: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic

TR62411

Abstract: DS2141A DS21Q41B DS21Q41BTN TR54016
Contextual Info: DS21Q41B Quad T1 Framer www.dalsemi.com FEATURES § § § § § § § § § § § § § § § § Four T1 DS1/ISDN-PRI framing transceivers All four framers are fully independent Frames to D4, ESF, and SLC-96 formats 8-bit parallel control port that can be

AN9321

Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Contextual Info: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI

HUF76445P3

Abstract: HUF76445S3S HUF76445S3ST TB334
Contextual Info: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer

75307

Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Contextual Info: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75337

Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
Contextual Info: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75307

Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
Contextual Info: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology

76423P

Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Contextual Info: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S

59E-1

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Contextual Info: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

76633s

Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S

76629D

Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
Contextual Info: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw

AN9321

Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER