Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S-12068 33 Search Results

    S-12068 33 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    10120689-110ALF Amphenol Communications Solutions Quickie® Shrouded Header, Wire To Board, Vertical, Through Hole, Double Row, Pin In Paste, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy

    S-12068 33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ta811

    Abstract: No abstract text available
    Text: TA811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors


    Original     		PDF TA811 28-Mar-00 ta811

    MARKING CODE AA

    Abstract: Vishay DaTE CODE 1206-8 AN811 AA MARKING CODE SO8
    Text: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE AA Vishay DaTE CODE 1206-8 AN811 AA MARKING CODE SO8

    Untitled

    Abstract: No abstract text available
    Text: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI5402DC

    Abstract: No abstract text available
    Text: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 11-Mar-11

    AN811

    Abstract: No abstract text available
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811

    Untitled

    Abstract: No abstract text available
    Text: Si5441DC Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 5.3 0.06 at VGS = - 3.6 V - 5.1 0.083 at VGS = - 2.5 V - 4.3 Qg (Typ.) 11 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441DC 2002/95/EC Si5441DC-T1-E3 Si5441DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si5406DC Si5406DC-T1-E3 Si5406DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V


    Original     		PDF Si5461EDC Si5461EDC-T1-E3 Si5461EDC-T1-GE3 11-Mar-11

    SI5447DC-T1-E3

    Abstract: No abstract text available
    Text: Si5447DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.076 at VGS = - 4.5 V - 4.8 - 20 0.110 at VGS = - 2.5 V - 4.0 0.160 at VGS = - 1.8 V - 3.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si5447DC Si5447DC-T1-E3 Si5447DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5902BDC Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a Qg (Typ.) 2 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5902BDC 2002/95/EC Si5902BDC-T1-E3 Si5902BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V ± 4.9 0.074 at VGS = - 3.6 V ± 4.6 0.110 at VGS = - 2.5 V ± 3.8 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si5443DC Si5443DC-T1-E3 Si5443DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si5406DC Si5406DC-T1-E3 Si5406DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5933CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.0 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5933CDC 2002/95/EC Si5933CDC-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5440DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.019 at VGS = 10 V 6 0.024 at VGS = 4.5 V 6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Qg (Typ.) • TrenchFET Power MOSFET 9 nC


    Original     		PDF Si5440DC Si5440DC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5475DDC-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si5475DDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6a 0.040 at VGS = - 2.5 V - 6a 0.052 at VGS = - 1.8 V a -6 Qg (Typ.) 20 nC • Halogen-free • TrenchFET Power MOSFET


    Original     		PDF Si5475DDC Si5475DDC-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si5468DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 10 V 6 0.034 at VGS = 4.5 V 6 VDS (V) 30 Qg (Typ.) 3.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si5468DC Si5468DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A2V-16

    Abstract: No abstract text available
    Text: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A2V-16

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.062 at VGS = - 4.5 V - 5.1 0.068 at VGS = - 3.6 V - 4.9 0.085 at VGS = - 2.5 V - 4.4 0.120 at VGS = - 1.8 V - 3.7 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5463EDC Si5463EDC-T1-E3 Si5463EDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		PDF Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12