S-6 DIOD Search Results

j535

Abstract: 5353A RG 8506 5354B regulator ic 8503 5355B
Contextual Info: Zener Regulator Diodes P a rt N u m b er M ic ro s e m i Package O u tlin e D iv is io n 1N 4962US JA N 1 N 4 9 6 2 JA N 1 N 4 9 6 2 U S JA N S 1 N 4 9 6 2 JA N S 1 N 4 9 6 2 U S JA N T X 1 N 4 9 6 2 JA N T X 1 N 4 9 6 2 U S JA N T X V 1 N 4 9 6 2 JA N T X V 1 N 4 9 6 2 U S

DIODE0603

Abstract: diode 0603 16kv diode CPDUR5V0 smd diode code 39 diode smd marking 51
Contextual Info: c o A tc m r SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDUR S e r i e s R o H s Device Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 0 6 0 3 (1 6 0 8 ) High c o m p o n e n td e n s ity . 0 .0 7 1 (1 .8 0 ) 0 .0 6 3 (1 .6 0 )

CP50Q-OP5COSL

Abstract: S042 QP160SLC tmlh TnD 1214 1
Contextual Info: OPTEK TECHNOLOGY INC OLE I> | 1,7*10500 OGDOlOt. 7 | O p to e le c tr o n ic s D iv is io n T R W Electronic Components Group Product Bulletin S042 Janu ary 1985 G a A s Plastic Infrared Em ittin g Diodes Types O P 1 6 Q S L , O P 1 6 Q S L D , Q P 1 6 0 S L C , Q P 1 6 0 S L B , 0 P 1 6 0 S L A

CPDU5V0

Abstract: 029 smd diode CPDU12V CPDU24V CPDU36V
Contextual Info: COAiCHir SMD ESD Protection Diode S M D D io d e s S p e c ia lis t CPDU Series R o H s D e vic e Features (16kV) IEC 6 1 0 0 0 -4 -2 rating. S urface m ount package. 0 6 0 3 (1 6 0 8 ) 0 .0 7 1 (1 .8 0 ) 0 .0 6 3 (1 .6 0 ) High c o m p o n e n td e n s ity .

Contextual Info: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S

BAT31

Abstract: microwave varactor diode x band varactor diode 1N4885 varactor ghz BAY96 varactor diode capacitance range SOD-31 Diode BAY96 BXY56
Contextual Info: Microwave solid state book 1 part 8 D e s c r ip tio n D ra w in g re fe re n ce T ype No. O u tlin e multiplier varactor diodes 25 6 55 N 1 .5 6 45 1 0 0 m in . S O D -3 1 N 1 .0 6 25 120 S O D -3 1 N 0 .7 5 6 20 150 150 9 5 3 1.6 1 .0 0 .6 5 0 .4 6 6 6 6

1N6066 thomson

Abstract: lpp 68 g1 don connex 6064A 1N6036
Contextual Info: S G S —THOMSON S'ìC 59C ^ T H O M S O 02625 D 1I 7^ 237 GGG2b25 D 7 > //-£3 ’ N - C S F 1 1 M 6 0 3 6 ,A — DIVISION SEMICONDUCTEURS ► 1 IM 6 0 7 2 ,A BIDIRECTIONAL TR A N S IE N T V O L T A G E S U P P R E S S O R S DIODES DE PROTECTION BIDIRECTIONNELLES

321 tlt 131

Abstract: diode 1n 5645 GE 5663 tube 5662A 1N5629A 0B2 tube 1N5647 1N5637A 1N5631 marking 5651 diodes
Contextual Info: S 'ìC S —T H O M S O N 59C 02612 T H O M S O N - C S F O 1 D D N 5 6 2 7 ^ 5 3 7 I □ □ ü S fc .lE T ~ //~ 9 , A — ► 1 N 5 6 6 5 , A DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION UNIDIRECTIONNELLES TRANSIL

74LS674

Contextual Info: M MOTOROLA SN54LS/74LS673 SN54LS/74LS674 D E S C R IP T IO N — T he S N 5 4 L S /7 4 L S 6 7 3 and S N 5 4 L S /7 4 L S 6 7 4 are 3 -s ta te 1 6 -b it s h ift registers. T he L S 6 7 3 is a 1 6 -b it s h ift re g is te r and a 1 6 -b it sto ra g e re g is te r in a

74als166

Abstract: 54ALS166 SN74ALS166
Contextual Info: PRODUCT PREVIEW SN54ALS166, SN74ALS166 PARALLEL LOAD 8-BIT SHIFT REGISTERS D 2 6 6 1 , APRIL 1 9 8 2 -R E V 1 S E D M A Y 1 9 8 6 Synchronous Load S N 5 4 A L S 1 6 6 . . . J P AC K A G E S N 7 4 A L S 1 6 6 . . . D OR N P AC KAG E • Direct Overriding Clear

transistor S196

Abstract: SN74196 LS196 SN74197 SN54196 SN54197 SN54LS196 SN54LS197 SN54S197 SN74LS196
Contextual Info: S N 54196, S N 54197, SN54LS196, SN54LS197, S N 54S 196, SN54S197, S N 74196, S N 74197, SN74LS196, SN74LS197, SN 74S 196, SN74S197 50/30f10D MHz PRESETTABLE DECADE OR BINARY COUNTERS/LATCHES SDLS077 OCTOBER 1 9 7 6 — REVISED M A R C H 19 8 8 S N 5 4 1 9 6 . S N 54L S 19 6 , S N 5 4 S 1 9 6 ,

I960

Abstract: 6DA4A
Contextual Info: T E N T A T IV E DATA 6DA4A TUNGSOL DIODE UNI P O T E N T I A L CATHODE HEA TE R 6 .3 * 0 .6 VOLTS 1 . 2 AMP. ANY MOUNTING P O S I T I O N SOCKET P IN S NOT 6 E U S E D 1, AS 2 , >* & 6 MUS T T I E POINTS. SHORT G L A S S B UL B INTERMEDIATE SH ELL 5 P I N OCTAL

Contextual Info: coA tcm r SMD Schottky Barrier Diode S M D D io d e s S p e c ia lis t C D B U R 0 0 1 A RoHs Device lo = 100mA V r = 30 Volts Features 0 6 0 3 (1 6 0 8 ) D e s i g n e d f o r m o u n t i n g on s m a l l s u r f a c e . 0 .0 7 1 (1 .8 0 ) 0 .0 6 3 (1 .6 0 )

Contextual Info: M M O T O R O L A D E S C R IP T IO N — The S N 5 4 L S /7 4 L S 6 6 8 and S N 5 4 L S /7 4 L S 6 6 9 are s y n c h ro n o u s 4 -b it u p /d o w n c o u n te rs . The LS 6 6 8 is a decade c o u n te r and th e L S 6 6 9 is a 4 - b it b in a ry co u n te r. For h ig h speed c o u n tin g

GEZ DIODE

Abstract: 4-KD20 GEZ 26 42kD
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

74ls668

Abstract: 74LS66 54LS74LS669
Contextual Info: M MOTOROLA D E S C R I P T I O N — T h e S N 5 4 L S / 7 4 L S 6 6 8 a n d S N 5 4 L S / 7 4 L S 6 6 9 a re SN54LS/74LS668 SN54LS/74LS669 s y n c h ro n o u s 4 -b it u p /d o w n c o u n te rs . T h e L S 6 6 8 is a d e c a d e c o u n te r a n d th e L S 6 6 9 is a 4 -b it b in a ry c o u n te r. For h ig h speed c o u n tin g

GEZ DIODE

Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

1sr156-100

Contextual Info: $ < ^ — K / D io d e s 1SR156-100/1SR156-200/1SR156-400 1 S R 1 5 6 - 1 0 0 / 1 S R 1 5 6 - 2 0 0 / 1 S R 1 5 6 - 4 0 0 MSS't1 (Under Development) ->') =i K Silicon Diffused Junction High-Speed Rectifying Diodes • W f ÿ 'T / ilS I / Dim ensions (Unit : mm)

Contextual Info: Y/ Light Emitting Diodes -Y LUM-2568ML353 LU M-2568ML353 • LU M -2 5 6 8 M L 3 5 3 H77 7 t y h, 1 6 X 1 6 K-y h T h yh 1 6 X 1 6 Dot Matrix Unit Dimensions Unit : mm & ! T ' i 5 1 6 X 1 6 K y t-Th U t I T 'T o ‘J, i T o H ffl LSI =i > S P - 7 l i , U £ 211 # *# ^ , S S ( C * # a * ,

C617C

Abstract: LS367A
Contextual Info: fZ 7 ^ 7 # S C S -T H O M S O N T 7 4 L S 3 6 5 A /3 6 6 A T 7 4 L S 3 6 7 A /3 6 8 A 3-STATE HEX BUFFERS DESCRIPTION These devices are high-speed Hex Buffers with 3state outputs. They are organized as single 6-bit or 2-bit/4-bit, with inverting or non-inverting data D

Contextual Info: Q S FC T646T, 648T, 2646T, 2648T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S 5 4 /7 4 F C T 6 4 6 T Q S 5 4 /7 4 F C T 6 4 8 T Q S 5 4 /7 4 F C T 2 6 4 6 T Q S 5 4 /7 4 F C T 2 6 4 8 T F E A T U R E S /B E N E F IT S • Pin and function compatible to the 74F646/8

SN5406

Abstract: SN5416 SN74 SN7406 SN7416 SN741s inverter schematic diagram SDL-S031
Contextual Info: SN540G, SN5416, SN7406, SIU7416 HEX INVERTER BUFFERS/DRIVERS WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS SDLS031 DECEMBER 1983 —REVISED MARCH 1988 Converts TTL Voltage Levels to M O S Levels S N 5 4 0 6 , S N 5 4 1 6 . . . J OR W PACKAGE S N 7 4 0 6 , S N 7 4 1 6 . . . N PACKAGE

6SN7

Contextual Info: SN 5 4 L S0 6 , SN54LS1 6, S N 7 4 L S0 6 , S N 7 4 L S 1 6 HEX I NV ER T ER B U F F E R S / D R I V E R S WITH OPEN-COLLECTOR HIGH-VOLTAGE OUTPUTS S D LS 020A - MAY 1990 SN54LS06, SN54LÔ1 6 . . . J PACKAGE SN74LS06, SN74LS16 . . . D OR N PACKAGE * C o n v e r t s TTL Vol tage L eve l s to MOS

Contextual Info: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A