S-BAND POWER AMPLIFIER INTERCEPT POINT Search Results

Contextual Info: SPECIFICATION DEFINITIONS GENERAL SPECIFICATIONS Most models defined within this catalog are classified by several specifications, namely: taken at several points within the band; however, in all cases, the amplifier gain has been measured in a swept fashion with performance verified over the

AN749

Abstract: AN-749 MAX1470 MAX2116 IIP31 IIP22
Contextual Info: WIRELESS, RF, AND CABLE Application Note 749: May 17, 2001 Improving Receiver Intercept Point Using Selectivity The receiver's intermodulation spurious response attenuation is a measure of the receiver's ability to receive a modulated input RF signal frequency on its assigned

AN749

Abstract: AN-749 MAX1470 MAX2116 IIP31
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rf design, radio frequency May 17, 2001 APPLICATION NOTE 749 Improving Receiver Intercept Point Using Selectivity Abstract: The receiver's intermodulation spurious response attenuation is a measure of the receiver's ability to

BFP620 applications note

Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
Contextual Info: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm

f541m43b

Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed

TRANSISTOR W25

Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with

Contextual Info: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 25 dB Small Signal Gain 24dBm Linear Output Power 34dBm Third Order Intercept Point Thermally Optimum Moly-Copper Package

Teledyne Wireless

Contextual Info: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +23 dBm Output Power @1 dB Gain Compression 23 dB Minimum Small Signal Gain 34dBm Third Order Intercept Point Surface Mount, Thermally Optimum

AN749

Abstract: APP749 MAX1470 MAX2116 MAX2320 MAX2338 MAX2410 MAX2420 MAX2538 MAX2700
Contextual Info: Maxim > App Notes > Wireless and RF Keywords: rf, rf design, radio frequency, RF, Intercept point, IP, intermodulation, IM, continuous wave, CW, IIP2, IIP3, IM, IIM3, carrierto-interference ratio, C/I May 01, 2002 APPLICATION NOTE 749 Use selectivity to improve receiver intercept point

Contextual Info: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 28.5dBm Linear Output Power 41dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package

Contextual Info: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 27 dBm Linear Output Power 22 dB Small Signal Gain 38 dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package

a872 TRANSISTOR equivalent

Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
Contextual Info: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the

Contextual Info: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise

LMX2215

Abstract: HP8757 LMX2216B gilbert cell sum AN-884 C1995 Basics on Radars ge-2 transistor noise diode generator Self-Oscillating mixer
Contextual Info: National Semiconductor Application Note 884 A Dao April 1993 ABSTRACT Basic theory and operation of low noise amplifiers and mixers are presented Important figures of merits of these two devices such as gain noise figure compression point and third order intercept point are introduced and derived Measurement methods of these figures of merit are also described

SFD1001

Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
Contextual Info: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000

spectrum analyzer

Abstract: block diagram for RF transmitter AND RECEIVER frequency doubler balun high frequency mixer rf receivers x band receiver 32 band audio spectrum analyzer strong 4400 receiver
Contextual Info: Evaluation Board Documentation TRF1500 Integrated Dual-Band RF Receiver User’s Guide APPLICATION BRIEF: SWRA004A Wireless Communications Business Unit Digital Signal Processing Solutions July 98 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

BFP420

Abstract: BFP420 application note POWER AMPLIFIER SCHEMATIC DIAGRAM transistor bfp420 application note amplifier transistor 902 transistor k 208 transistor 928 transistor A 928 915 transistor
Contextual Info: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 8 T h e B F P 4 2 0 T r a n s i s t o r a s a Lo w - C o s t 90 0 M H z ISM Band Power Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2008-02-27 Published by

Contextual Info: RECEIVER MULTICOUPLERS Functionality and Application The receiver multicoupler is an antenna subsystem com­ ponent that allows for the operation of two or more receivers connected to a common receive antenna. Re­ sulting signal quality to the receiver is equal to, or su­

gaas fet marking D

Contextual Info: Infineon *ai hnciogicsä GaAs MMIC CMH 0819 Preliminary Data Sheet • High-Linearity, Dual-Band LNA/Mixer 1C for use in CDMA Mobile Phones • integrated bypass switch for LNAs • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package • • LO - Input power down to: - 7.0 dBm

BFP620 applications note

Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
Contextual Info: A pp l ic a t io n N o t e, R e v . 3. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 0 A H i g h T h i r d- O r d e r I nt e r c e pt L o w N o i s e A m p l i f i e r f o r 1 9 0 0 M H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor

A2069

Abstract: AN0017 CHA2069-QDG MO-220
Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.

ATF-54143

Abstract: ATF-641 ATF-10236 ATF-55143 ATF-54143 sot-343 variable power divider at 15 ghz ATF10236 atf54143 pHEMT 9015 transistor sot 23 SC 9015
Contextual Info: A Low Noise High Intercept Point Amplifier for 900 MHz Applications using the Agilent ATF-54143 PHEMT Application Note 1299 1. Introduction The Agilent Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the

5.7 GHz power amplifier

Abstract: tag 725 TAG-1030
Contextual Info: Product Information ISO 9001 CERTIFIED TA G - 1 0 3 0 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es: ♦ ♦ ♦ ♦ 23 dB Small Signal Gain 26 dBm Minimum Linear Output Power 34 dBm 3rd Order Intercept Point Thermally Efficient Moly-Copper Package

Contextual Info: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.