S-PARAMETER S11 S12 S21 10000 Search Results

kf 203 transistor

Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL

1820 0944

Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

transistor "micro-x" "marking" 102

Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

transistor bf 760

Abstract: MCH4008 945 npn
Contextual Info: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

MCH4008

Abstract: TB 2920
Contextual Info: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

ZO 607 MA

Abstract: transistor zo 607 zo 607 zo 107 2SC5945 2SC5945TR-E
Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

mje 3007

Contextual Info: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)

Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

ZO 607 MA

Abstract: 149-5 zo 607 150-1 2SC5945
Contextual Info: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.

sanyo eg 8500

Abstract: transistor 9747 MCH4009
Contextual Info: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.

Contextual Info: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

WQFN0202-8V

Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

mje 3007

Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC5945

Abstract: 2SC5945TR-E 0773
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

30S124

Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

KA 1046 Y 839

Abstract: KA 1046 Y 840
Contextual Info: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Contextual Info: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA

transistor TT 2146

Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
Contextual Info: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use