S10192 Search Results
S10192 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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A10192
Abstract: G10191 S10192
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W10191, W10192 S10191, S10192 N10191, N10192 D10191, D10192 B10191, B10192 A10192 G10191 S10192 | |
W10192
Abstract: W10191 B1019 IEC825 SSC 350mA R10192
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X1019X W10192 W10191 B1019 IEC825 SSC 350mA R10192 | |
Contextual Info: SQM50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.022 ID (A) • TrenchFET Power MOSFET |
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SQM50P06-15L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P06-15L-GE3 18-Jul-08 | |
Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0 |
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SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ4840EY Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.009 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.012 |
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SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 11-Mar-11 | |
SQ4840EY-T1-GE3
Abstract: 68669
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SQ4840EY 2002/95/EC AEC-Q101 SQ4840EY-T1-GE3 18-Jul-08 SQ4840EY-T1-GE3 68669 | |
Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V (A)a, f 8.0 8.0 8.0 8.0 |
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SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0 |
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SiR770DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0 |
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SiR770DP 2002/95/EC 11-Mar-11 | |
Contextual Info: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X1019X Z-Power series is designed for high current operation and high flux output applications. Z-Power LED's thermal management perform exceeds other power LED solutions. It incorporates state of the art SMD design and Thermal |
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X1019X Decorati2006 | |
Contextual Info: SiR770DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V a, f Qg (Typ.) 8.0 |
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SiR770DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQM50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.022 ID (A) • TrenchFET Power MOSFET |
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SQM50P06-15L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P06-15L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: SQM50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.022 ID (A) • TrenchFET Power MOSFET |
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SQM50P06-15L 2002/95/EC AEC-Q101 O-263 O-263 SQM50P06-15L-GE3 11-Mar-11 | |
Contextual Info: SQM120N08-05 Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd |
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SQM120N08-05 AEC-Q101 2002/95/EC O-263 O-263 SQM120N08-05-GE3 11-Mar-11 | |
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