S1124 Search Results

s1124

Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

PC437

Contextual Info: Tyco Electronics Corporation 300 Constitution Drive Menlo Park, CA 94025 USA Specification This Issue: Date: Replaces: RT-1050/13 Issue 3 September 13, 1996 Issue 2 THERMOFIT ADHESIVE AND SEALANT THERMOFIT S-1124 Thermofit S-1124 is a flexible adhesive based on elastomeric polymers. This adhesive was developed for use with

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

diode s1 77

Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28

Contextual Info: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET

Contextual Info: SiHG25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Optimal Design 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC)

Contextual Info: SiP32401A, SiP32402A Vishay Siliconix 1.1 V to 5.5 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32401A and SiP32402A are slew rate controlled load switches designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V

Contextual Info: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SiP32413, SiP32414, SiP32416 Vishay Siliconix Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32413, SiP32414 and SiP32416 are slew rate controlled load switches that is designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V

Contextual Info: SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.023 RDS(on) (Ω) at VGS = 4.5 V 0.032 ID (A) • TrenchFET Power MOSFET

si41

Contextual Info: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SQJ970EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

socket s1

Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
Contextual Info: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-90 S1-82 S1-79 S1-77 TTL1 TTL4 B2 TTL7 B3 TTL10 B4 A5 TTL12 B5 AID5 A6 TTL14 B6 AID4 A7 PVCC B7 AID0 A8 PVSP B8 AID1 A9 TTL18 B9 AID2 A10 AGND B10 AID3 A11 TTL44 B11 AID7 A12 AGND B12 AGND A13 AGND B13 CGND

Contextual Info: SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: 1VJLU JL U _C U_ 1 O il lo Specification p o rt N u m b e r : Control Drawing D e s c rip tio n 462A421 : S lim lin e th r u 423 T r a n s it io n , 4 E n try NOTES 1 . A ll 2. 3. d im e n s io n s a re in - [ m illim e t e r s ] D im e n s io n s a p p e a rin g in ta b le

Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiP32413, SiP32414, SiP32416 Vishay Siliconix Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32413, SiP32414 and SiP32416 are slew rate controlled load switches that is designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V

Contextual Info: SiC414, SiC424 Vishay Siliconix 6 A, microBUCK SiC414, SiC424 Integrated Buck Regulator with 5 V LDO DESCRIPTION FEATURES The Vishay Siliconix SiC414 and SiC424 are an advanced stand-alone synchronous buck regulator featuring integrated power MOSFETs, bootstrap switch, and an internal 5 VLDO