S1227 Search Results

Contextual Info: A firm Commitment to excellence with a global perspective and an eye to the future Home » Solder Soakers » S1227- O- M Solder Soakers - S1227- O- M Features: Custom die- cut sponges available minimum quantity 2,500 RoHS Compliant "T"=10 per package "M"=1000 per package

DS146

Abstract: Saronix xtal Oscillator
Contextual Info: SaRonix Crystal Clock Oscillator True TTL S1227 Series Technical Data Frequency Range: 0.5 MHz to 34 M H z Frequency Stability: ±25, ±30, ±32, ±50 or ±100 ppm over all conditions: calibration tolerance, operating tem perature range, input voltage range, load

S1227

Abstract: S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq
Contextual Info: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.

1010BQ

Abstract: S1227 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR
Contextual Info: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.

Contextual Info: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power

Contextual Info: Siフォトダイオード S1227シリーズ 紫外～可視域精密測光用 赤外感度抑制タイプの フォトダイオード 特長 用途 紫外高感度 石英窓タイプ : QE 75 % (λ=200 nm) 赤外感度抑制タイプ 分析機器 光計測機器など

t03 package mosfet pin configuration

Abstract: WEE-470 D40N FERRITE TOROIDAL CORE DATA rs232 schematic diagram DS1227 DS1227S DS1275 DS1283 Nytronics
Contextual Info: D S1227 DALLAS S1227 Kickstarter Chip s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Provides step-up regulation and microenergy management for battery-operated systems VC C 02Q 1 20 H V C C 04 vccoaQ 2 19 3 VCC01 E 3 18 pw ronQ 4 17 : ÏNT/ACK £ 5

N418 AB

Abstract: DC-DC converter 5V stim KPIN n418
Contextual Info: D S1227 DALLAS SEMICONDUCTOR FEATURES S1227 Kickstarter Chip PI N A S S I G N M E N T • Provides step-up regulation and m icroenergy m anagem ent for battery-operated systems ^7~ • Converts +3V to +6V DC input power source to +5V DC out for system power

Contextual Info: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc.

APD InGaAs array

Abstract: Photodiodes Pyroelectric Detectors Image Sensors Photodiode apd amplifier VISIBLE Photodiode Array Detectors INSB PHOTODIODE Avalanche cmos detector H4741
Contextual Info: Selection Guide Types and Applications of Hamamatsu Opto-semiconductors. 2, 3 Si Photodiodes S1226, S1227 Series UV to Visible Light, for Precision Photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for Precision Photometry) .4

Contextual Info: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed I R sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ= 200 nm) Analytical equipment Suppressed I R sensitivity Optical measurement equipment, etc.

Photodiodes

Abstract: Infrared photodiode preamplifier photodiode preamplifier
Contextual Info: Selection Guide Types and Applications of Hamamatsu O pto-sem , 3 Silicon Photodiodes S1226, S1227 Series UV to visible light, for precision photometry, Suppressed IR Sensitivity 4 S1336, S1337 Series (UV to IR, for precision photom

S1227-66BQ

Abstract: CS1227
Contextual Info: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.

S1227-33BR

Contextual Info: Si photodiodes S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc.

S1227-16BQ

Contextual Info: Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications High UV sensitivity quartz window type : QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc.

Contextual Info: Si PINフォトダイオード S12271 紫外～近赤外域用大面積高速PINフォトダイオード S12271は、φ4.1 mmという広い受光面サイズをもち、高速応答を実現したSi PINフォトダイオードです。受光窓に石英ガ

S1227-66BQ

Abstract: S1227-1010BQ S1227-1010BR S1227 S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BR ss1227
Contextual Info: PHOTODIODE Siフォトダイオード S1227シリーズ 紫外~可視域精密測光用赤外感度抑制タイプのフォトダイオード 特長 用途 l 高紫外感度: QE 75 % λ=200 nm l 赤外感度抑制タイプ l 低暗電流 l 分析機器

Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

Contextual Info: SiA921EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.059 at VGS = - 4.5 V - 4.5a 0.098 at VGS = - 2.5 V - 4.5a Qg (Typ.) 4.9 nC PowerPAK SC-70-6 Dual 1 S1 2 G1 3 D2 D1 D1 6 • Load Switch, PA Switch and Battery Switch for Portable

S5590

Contextual Info: A a Si PHOTODIODES r-^tvî-iîMŒ! S-10. Si Photodiode with Built-in Pre-amp TE-cooledTyp Large area ( 1 0 x 1 0 mm , low noise, high stability The S6204 is a TE-cooled Si photodiode with operational amplifier for lowlight-level detection, e. g. spectrophotometry, NOx sensor. This integrates

si5936

Abstract: S12 MARKING CODE DIODE
Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5